JP7715630B2 - 半導体装置、撮像装置、および表示装置 - Google Patents

半導体装置、撮像装置、および表示装置

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Publication number
JP7715630B2
JP7715630B2 JP2021531765A JP2021531765A JP7715630B2 JP 7715630 B2 JP7715630 B2 JP 7715630B2 JP 2021531765 A JP2021531765 A JP 2021531765A JP 2021531765 A JP2021531765 A JP 2021531765A JP 7715630 B2 JP7715630 B2 JP 7715630B2
Authority
JP
Japan
Prior art keywords
light
wiring
potential
input terminal
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021531765A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021171137A5 (https=
JPWO2021171137A1 (https=
Inventor
圭 高橋
耕平 豊高
英智 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2021126626A priority Critical patent/JP7195387B2/ja
Publication of JPWO2021171137A1 publication Critical patent/JPWO2021171137A1/ja
Publication of JPWO2021171137A5 publication Critical patent/JPWO2021171137A5/ja
Application granted granted Critical
Publication of JP7715630B2 publication Critical patent/JP7715630B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K65/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/33—Transforming infrared radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2021531765A 2020-02-28 2021-02-17 半導体装置、撮像装置、および表示装置 Active JP7715630B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2021126626A JP7195387B2 (ja) 2020-02-28 2021-08-02 半導体装置、撮像装置、および表示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020033670 2020-02-28
JP2020033670 2020-02-28
PCT/IB2021/051307 WO2021171137A1 (ja) 2020-02-28 2021-02-17 半導体装置、撮像装置、および表示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021126626A Division JP7195387B2 (ja) 2020-02-28 2021-08-02 半導体装置、撮像装置、および表示装置

Publications (3)

Publication Number Publication Date
JPWO2021171137A1 JPWO2021171137A1 (https=) 2021-09-02
JPWO2021171137A5 JPWO2021171137A5 (https=) 2024-02-22
JP7715630B2 true JP7715630B2 (ja) 2025-07-30

Family

ID=77489887

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021531765A Active JP7715630B2 (ja) 2020-02-28 2021-02-17 半導体装置、撮像装置、および表示装置
JP2021126626A Active JP7195387B2 (ja) 2020-02-28 2021-08-02 半導体装置、撮像装置、および表示装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2021126626A Active JP7195387B2 (ja) 2020-02-28 2021-08-02 半導体装置、撮像装置、および表示装置

Country Status (6)

Country Link
US (1) US11882374B2 (https=)
JP (2) JP7715630B2 (https=)
KR (1) KR20220149405A (https=)
CN (1) CN113661575A (https=)
DE (1) DE112021000034T5 (https=)
WO (1) WO2021171137A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11900721B2 (en) 2019-09-27 2024-02-13 Semiconductor Energy Laboratory Co., Ltd. Electronic device and program
JP7723486B2 (ja) * 2021-03-03 2025-08-14 キヤノン株式会社 半導体装置、機器
WO2026009704A1 (ja) * 2024-07-04 2026-01-08 株式会社ジャパンディスプレイ 検出装置及び検出装置の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070290741A1 (en) 2005-08-03 2007-12-20 Micron Technology, Inc. Technique to improve the gain and signal to noise ratio in cmos switched capacitor amplifiers
JP2011100113A (ja) 2009-11-05 2011-05-19 Samsung Mobile Display Co Ltd 基準電圧設定装置、それを備える照度測定装置及びディスプレイ装置
JP2013236362A (ja) 2012-04-12 2013-11-21 Canon Inc 撮像装置及び撮像システム
JP2017022444A (ja) 2015-07-07 2017-01-26 キヤノン株式会社 撮像素子及び撮像システム
JP2017038312A (ja) 2015-08-13 2017-02-16 キヤノン株式会社 固体撮像装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9264643B1 (en) * 2012-12-29 2016-02-16 Rambus, Inc. Methods and circuitries for pixel sampling
US9380245B1 (en) * 2013-02-14 2016-06-28 Rambus Inc. Conditional-reset image sensor with analog counter array
DE102020122248A1 (de) * 2019-08-30 2021-03-04 Semiconductor Components Industries, Llc Bildgebungssysteme mit einstellbarer verstärkerschaltungsanordnung
US11445140B2 (en) * 2019-08-30 2022-09-13 Semiconductor Components Industries, Llc Imaging systems with adjustable amplifier circuitry

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070290741A1 (en) 2005-08-03 2007-12-20 Micron Technology, Inc. Technique to improve the gain and signal to noise ratio in cmos switched capacitor amplifiers
JP2011100113A (ja) 2009-11-05 2011-05-19 Samsung Mobile Display Co Ltd 基準電圧設定装置、それを備える照度測定装置及びディスプレイ装置
JP2013236362A (ja) 2012-04-12 2013-11-21 Canon Inc 撮像装置及び撮像システム
JP2017022444A (ja) 2015-07-07 2017-01-26 キヤノン株式会社 撮像素子及び撮像システム
JP2017038312A (ja) 2015-08-13 2017-02-16 キヤノン株式会社 固体撮像装置

Also Published As

Publication number Publication date
US11882374B2 (en) 2024-01-23
WO2021171137A1 (ja) 2021-09-02
CN113661575A (zh) 2021-11-16
US20220394202A1 (en) 2022-12-08
JP2022166798A (ja) 2022-11-02
DE112021000034T5 (de) 2022-03-17
KR20220149405A (ko) 2022-11-08
JP7195387B2 (ja) 2022-12-23
JPWO2021171137A1 (https=) 2021-09-02

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