KR20220149405A - 반도체 장치, 촬상 장치, 및 표시 장치 - Google Patents

반도체 장치, 촬상 장치, 및 표시 장치 Download PDF

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Publication number
KR20220149405A
KR20220149405A KR1020217029922A KR20217029922A KR20220149405A KR 20220149405 A KR20220149405 A KR 20220149405A KR 1020217029922 A KR1020217029922 A KR 1020217029922A KR 20217029922 A KR20217029922 A KR 20217029922A KR 20220149405 A KR20220149405 A KR 20220149405A
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KR
South Korea
Prior art keywords
wiring
input terminal
light
pixel
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020217029922A
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English (en)
Korean (ko)
Inventor
게이 다카하시
고우헤이 도요타카
히데토모 고바야시
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20220149405A publication Critical patent/KR20220149405A/ko
Pending legal-status Critical Current

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    • H04N5/378—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H01L27/288—
    • H01L27/3234—
    • H01L27/3276—
    • H01L51/0096—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H04N5/3741—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K65/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/33—Transforming infrared radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
KR1020217029922A 2020-02-28 2021-02-17 반도체 장치, 촬상 장치, 및 표시 장치 Pending KR20220149405A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-033670 2020-02-28
JP2020033670 2020-02-28
PCT/IB2021/051307 WO2021171137A1 (ja) 2020-02-28 2021-02-17 半導体装置、撮像装置、および表示装置

Publications (1)

Publication Number Publication Date
KR20220149405A true KR20220149405A (ko) 2022-11-08

Family

ID=77489887

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217029922A Pending KR20220149405A (ko) 2020-02-28 2021-02-17 반도체 장치, 촬상 장치, 및 표시 장치

Country Status (6)

Country Link
US (1) US11882374B2 (https=)
JP (2) JP7715630B2 (https=)
KR (1) KR20220149405A (https=)
CN (1) CN113661575A (https=)
DE (1) DE112021000034T5 (https=)
WO (1) WO2021171137A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11900721B2 (en) 2019-09-27 2024-02-13 Semiconductor Energy Laboratory Co., Ltd. Electronic device and program
JP7723486B2 (ja) * 2021-03-03 2025-08-14 キヤノン株式会社 半導体装置、機器
WO2026009704A1 (ja) * 2024-07-04 2026-01-08 株式会社ジャパンディスプレイ 検出装置及び検出装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013236362A (ja) 2012-04-12 2013-11-21 Canon Inc 撮像装置及び撮像システム

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7230479B2 (en) 2005-08-03 2007-06-12 Micron Technology, Inc. Technique to improve the gain and signal to noise ratio in CMOS switched capacitor amplifiers
KR101137387B1 (ko) 2009-11-05 2012-04-20 삼성모바일디스플레이주식회사 기준 전압 설정 장치를 포함한 조도 측정 장치와 디스플레이 장치
US9264643B1 (en) * 2012-12-29 2016-02-16 Rambus, Inc. Methods and circuitries for pixel sampling
US9380245B1 (en) * 2013-02-14 2016-06-28 Rambus Inc. Conditional-reset image sensor with analog counter array
JP2017022444A (ja) 2015-07-07 2017-01-26 キヤノン株式会社 撮像素子及び撮像システム
JP6727771B2 (ja) 2015-08-13 2020-07-22 キヤノン株式会社 撮像装置
DE102020122248A1 (de) * 2019-08-30 2021-03-04 Semiconductor Components Industries, Llc Bildgebungssysteme mit einstellbarer verstärkerschaltungsanordnung
US11445140B2 (en) * 2019-08-30 2022-09-13 Semiconductor Components Industries, Llc Imaging systems with adjustable amplifier circuitry

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013236362A (ja) 2012-04-12 2013-11-21 Canon Inc 撮像装置及び撮像システム

Also Published As

Publication number Publication date
US11882374B2 (en) 2024-01-23
WO2021171137A1 (ja) 2021-09-02
CN113661575A (zh) 2021-11-16
JP7715630B2 (ja) 2025-07-30
US20220394202A1 (en) 2022-12-08
JP2022166798A (ja) 2022-11-02
DE112021000034T5 (de) 2022-03-17
JP7195387B2 (ja) 2022-12-23
JPWO2021171137A1 (https=) 2021-09-02

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