JP7710752B2 - 磁気メモリ素子及びその作製方法 - Google Patents

磁気メモリ素子及びその作製方法

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Publication number
JP7710752B2
JP7710752B2 JP2023514659A JP2023514659A JP7710752B2 JP 7710752 B2 JP7710752 B2 JP 7710752B2 JP 2023514659 A JP2023514659 A JP 2023514659A JP 2023514659 A JP2023514659 A JP 2023514659A JP 7710752 B2 JP7710752 B2 JP 7710752B2
Authority
JP
Japan
Prior art keywords
layer
magnetic
memory element
antiferromagnetic
magnetic memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023514659A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022220251A1 (https=
Inventor
知 中▲辻▼
友也 肥後
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Tokyo NUC
Original Assignee
University of Tokyo NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Tokyo NUC filed Critical University of Tokyo NUC
Publication of JPWO2022220251A1 publication Critical patent/JPWO2022220251A1/ja
Application granted granted Critical
Publication of JP7710752B2 publication Critical patent/JP7710752B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2023514659A 2021-04-12 2022-04-12 磁気メモリ素子及びその作製方法 Active JP7710752B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163173579P 2021-04-12 2021-04-12
US63/173,579 2021-04-12
PCT/JP2022/017647 WO2022220251A1 (ja) 2021-04-12 2022-04-12 磁気メモリ素子

Publications (2)

Publication Number Publication Date
JPWO2022220251A1 JPWO2022220251A1 (https=) 2022-10-20
JP7710752B2 true JP7710752B2 (ja) 2025-07-22

Family

ID=83640695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023514659A Active JP7710752B2 (ja) 2021-04-12 2022-04-12 磁気メモリ素子及びその作製方法

Country Status (4)

Country Link
US (1) US20240194235A1 (https=)
JP (1) JP7710752B2 (https=)
CN (1) CN117356199A (https=)
WO (1) WO2022220251A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024181562A1 (ja) * 2023-03-01 2024-09-06 ＴｏｐｏＬｏｇｉｃ株式会社 素子および素子の製造方法
JPWO2024204298A1 (https=) * 2023-03-28 2024-10-03
TW202515349A (zh) 2023-06-09 2025-04-01 日商Jsr 股份有限公司 磁性體及絕緣體的雙層膜、穿隧磁阻元件及磁記憶體
TW202505988A (zh) * 2023-07-19 2025-02-01 日商Ｊｓｒ股份有限公司 磁穿隧接面元件的製造方法
TW202505990A (zh) 2023-07-28 2025-02-01 日商Jsr 股份有限公司 反鐵磁性體材料、磁性體及絕緣體的雙層膜、穿隧磁阻元件及磁記憶體
WO2025079734A1 (ja) * 2023-10-13 2025-04-17 ＴｏｐｏＬｏｇｉｃ株式会社 磁気メモリ素子
CN120949364B (zh) * 2025-10-13 2026-01-23 中国人民解放军国防科技大学 一种Kagome光子晶体

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017018391A1 (ja) 2015-07-24 2017-02-02 国立大学法人東京大学 メモリ素子
WO2019045055A1 (ja) 2017-09-04 2019-03-07 Tdk株式会社 スピン軌道トルク型磁化反転素子及び磁気メモリ
JP2019110326A (ja) 2017-03-29 2019-07-04 Tdk株式会社 記憶素子及び磁気メモリ
JP2020017662A (ja) 2018-07-26 2020-01-30 株式会社アルバック 磁気記憶素子、および、磁気記憶素子の製造方法
WO2020166722A1 (ja) 2019-02-15 2020-08-20 国立大学法人東京大学 スピントロニクス素子及び磁気メモリ装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017018391A1 (ja) 2015-07-24 2017-02-02 国立大学法人東京大学 メモリ素子
JP2019110326A (ja) 2017-03-29 2019-07-04 Tdk株式会社 記憶素子及び磁気メモリ
WO2019045055A1 (ja) 2017-09-04 2019-03-07 Tdk株式会社 スピン軌道トルク型磁化反転素子及び磁気メモリ
JP2020017662A (ja) 2018-07-26 2020-01-30 株式会社アルバック 磁気記憶素子、および、磁気記憶素子の製造方法
WO2020166722A1 (ja) 2019-02-15 2020-08-20 国立大学法人東京大学 スピントロニクス素子及び磁気メモリ装置

Also Published As

Publication number Publication date
CN117356199A (zh) 2024-01-05
US20240194235A1 (en) 2024-06-13
WO2022220251A1 (ja) 2022-10-20
JPWO2022220251A1 (https=) 2022-10-20

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