CN117356199A - 磁存储元件 - Google Patents

磁存储元件 Download PDF

Info

Publication number
CN117356199A
CN117356199A CN202280027992.XA CN202280027992A CN117356199A CN 117356199 A CN117356199 A CN 117356199A CN 202280027992 A CN202280027992 A CN 202280027992A CN 117356199 A CN117356199 A CN 117356199A
Authority
CN
China
Prior art keywords
layer
magnetic
antiferromagnetic
memory element
spin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280027992.XA
Other languages
English (en)
Chinese (zh)
Inventor
中辻知
肥后友也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Tokyo NUC
Original Assignee
University of Tokyo NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Tokyo NUC filed Critical University of Tokyo NUC
Publication of CN117356199A publication Critical patent/CN117356199A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
CN202280027992.XA 2021-04-12 2022-04-12 磁存储元件 Pending CN117356199A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163173579P 2021-04-12 2021-04-12
US63/173,579 2021-04-12
PCT/JP2022/017647 WO2022220251A1 (ja) 2021-04-12 2022-04-12 磁気メモリ素子

Publications (1)

Publication Number Publication Date
CN117356199A true CN117356199A (zh) 2024-01-05

Family

ID=83640695

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280027992.XA Pending CN117356199A (zh) 2021-04-12 2022-04-12 磁存储元件

Country Status (4)

Country Link
US (1) US20240194235A1 (https=)
JP (1) JP7710752B2 (https=)
CN (1) CN117356199A (https=)
WO (1) WO2022220251A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120949364A (zh) * 2025-10-13 2025-11-14 中国人民解放军国防科技大学 一种Kagome光子晶体

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024181562A1 (ja) * 2023-03-01 2024-09-06 ＴｏｐｏＬｏｇｉｃ株式会社 素子および素子の製造方法
JPWO2024204298A1 (https=) * 2023-03-28 2024-10-03
TW202515349A (zh) 2023-06-09 2025-04-01 日商Jsr 股份有限公司 磁性體及絕緣體的雙層膜、穿隧磁阻元件及磁記憶體
TW202505988A (zh) * 2023-07-19 2025-02-01 日商Ｊｓｒ股份有限公司 磁穿隧接面元件的製造方法
TW202505990A (zh) 2023-07-28 2025-02-01 日商Jsr 股份有限公司 反鐵磁性體材料、磁性體及絕緣體的雙層膜、穿隧磁阻元件及磁記憶體
WO2025079734A1 (ja) * 2023-10-13 2025-04-17 ＴｏｐｏＬｏｇｉｃ株式会社 磁気メモリ素子

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017018391A1 (ja) * 2015-07-24 2017-02-02 国立大学法人東京大学 メモリ素子
US11127641B2 (en) * 2017-03-29 2021-09-21 Tdk Corporation Spin-current magnetization reversal element, magnetoresistance effect element, and magnetic memory
JP6686990B2 (ja) * 2017-09-04 2020-04-22 Tdk株式会社 スピン軌道トルク型磁化反転素子及び磁気メモリ
JP2020017662A (ja) * 2018-07-26 2020-01-30 株式会社アルバック 磁気記憶素子、および、磁気記憶素子の製造方法
WO2020166722A1 (ja) * 2019-02-15 2020-08-20 国立大学法人東京大学 スピントロニクス素子及び磁気メモリ装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120949364A (zh) * 2025-10-13 2025-11-14 中国人民解放军国防科技大学 一种Kagome光子晶体

Also Published As

Publication number Publication date
US20240194235A1 (en) 2024-06-13
WO2022220251A1 (ja) 2022-10-20
JPWO2022220251A1 (https=) 2022-10-20
JP7710752B2 (ja) 2025-07-22

Similar Documents

Publication Publication Date Title
CN117356199A (zh) 磁存储元件
JP6923213B2 (ja) 磁性積層膜、磁気メモリ素子、磁気メモリ、及びその製造方法
EP2873079B1 (en) Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications
TWI530945B (zh) Memory elements and memory devices
KR100954970B1 (ko) 자기 저항 효과 소자, 자기 메모리 소자, 자기 메모리 장치 및 이들의 제조 방법
JP4371781B2 (ja) 磁気セル及び磁気メモリ
CN106887247B (zh) 信息存储元件和存储装置
CN101071628B (zh) 存储元件和存储器
TWI487155B (zh) Memory elements and memory devices
CN114730588B (zh) 隧穿变磁阻存储器设备及其操作方法
US9082950B2 (en) Increased magnetoresistance in an inverted orthogonal spin transfer layer stack
CN102403038B (zh) 存储元件和存储器件
JPWO2016182085A1 (ja) 磁気抵抗効果素子及び磁気メモリ装置
CN113330592A (zh) 包括高介电常数帽盖层的磁阻存储器设备及其制造方法
CN112567542A (zh) 非易失性存储器单元
JP4951858B2 (ja) メモリ
JP7606228B2 (ja) トンネル接合積層膜、磁気メモリ素子及び磁気メモリ
CN112968125B (zh) 无外场自旋轨道矩驱动磁翻转磁矩的器件及制备方法
JP2006165265A (ja) 記憶素子及びメモリ
JP2008153527A (ja) 記憶素子及びメモリ
US20250120322A1 (en) Magnetoresistive element and magnetic memory
JP5034317B2 (ja) 記憶素子及びメモリ
KR102923290B1 (ko) 이방성 향상 더스트 층을 포함하는 전압 제어형 자기 이방성 메모리 디바이스 및 이를 형성하기 위한 방법들
JP2004023015A (ja) 磁気抵抗効果素子およびその製造方法並びに磁気メモリ装置
CN114730832B (zh) 多铁辅助电压控制磁各向异性存储器设备及其制造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination