JPWO2022220251A1 - - Google Patents
Info
- Publication number
- JPWO2022220251A1 JPWO2022220251A1 JP2023514659A JP2023514659A JPWO2022220251A1 JP WO2022220251 A1 JPWO2022220251 A1 JP WO2022220251A1 JP 2023514659 A JP2023514659 A JP 2023514659A JP 2023514659 A JP2023514659 A JP 2023514659A JP WO2022220251 A1 JPWO2022220251 A1 JP WO2022220251A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Materials of the active region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163173579P | 2021-04-12 | 2021-04-12 | |
| US63/173,579 | 2021-04-12 | ||
| PCT/JP2022/017647 WO2022220251A1 (ja) | 2021-04-12 | 2022-04-12 | 磁気メモリ素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022220251A1 true JPWO2022220251A1 (https=) | 2022-10-20 |
| JP7710752B2 JP7710752B2 (ja) | 2025-07-22 |
Family
ID=83640695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023514659A Active JP7710752B2 (ja) | 2021-04-12 | 2022-04-12 | 磁気メモリ素子及びその作製方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240194235A1 (https=) |
| JP (1) | JP7710752B2 (https=) |
| CN (1) | CN117356199A (https=) |
| WO (1) | WO2022220251A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024181562A1 (ja) * | 2023-03-01 | 2024-09-06 | ＴｏｐｏＬｏｇｉｃ株式会社 | 素子および素子の製造方法 |
| JPWO2024204298A1 (https=) * | 2023-03-28 | 2024-10-03 | ||
| TW202515349A (zh) | 2023-06-09 | 2025-04-01 | 日商Jsr 股份有限公司 | 磁性體及絕緣體的雙層膜、穿隧磁阻元件及磁記憶體 |
| TW202505988A (zh) * | 2023-07-19 | 2025-02-01 | 日商Ｊｓｒ股份有限公司 | 磁穿隧接面元件的製造方法 |
| TW202505990A (zh) | 2023-07-28 | 2025-02-01 | 日商Jsr 股份有限公司 | 反鐵磁性體材料、磁性體及絕緣體的雙層膜、穿隧磁阻元件及磁記憶體 |
| WO2025079734A1 (ja) * | 2023-10-13 | 2025-04-17 | ＴｏｐｏＬｏｇｉｃ株式会社 | 磁気メモリ素子 |
| CN120949364B (zh) * | 2025-10-13 | 2026-01-23 | 中国人民解放军国防科技大学 | 一种Kagome光子晶体 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017018391A1 (ja) * | 2015-07-24 | 2017-02-02 | 国立大学法人東京大学 | メモリ素子 |
| WO2019045055A1 (ja) * | 2017-09-04 | 2019-03-07 | Tdk株式会社 | スピン軌道トルク型磁化反転素子及び磁気メモリ |
| JP2019110326A (ja) * | 2017-03-29 | 2019-07-04 | Tdk株式会社 | 記憶素子及び磁気メモリ |
| JP2020017662A (ja) * | 2018-07-26 | 2020-01-30 | 株式会社アルバック | 磁気記憶素子、および、磁気記憶素子の製造方法 |
| WO2020166722A1 (ja) * | 2019-02-15 | 2020-08-20 | 国立大学法人東京大学 | スピントロニクス素子及び磁気メモリ装置 |
-
2022
- 2022-04-12 JP JP2023514659A patent/JP7710752B2/ja active Active
- 2022-04-12 US US18/286,434 patent/US20240194235A1/en active Pending
- 2022-04-12 CN CN202280027992.XA patent/CN117356199A/zh active Pending
- 2022-04-12 WO PCT/JP2022/017647 patent/WO2022220251A1/ja not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017018391A1 (ja) * | 2015-07-24 | 2017-02-02 | 国立大学法人東京大学 | メモリ素子 |
| JP2019110326A (ja) * | 2017-03-29 | 2019-07-04 | Tdk株式会社 | 記憶素子及び磁気メモリ |
| WO2019045055A1 (ja) * | 2017-09-04 | 2019-03-07 | Tdk株式会社 | スピン軌道トルク型磁化反転素子及び磁気メモリ |
| JP2020017662A (ja) * | 2018-07-26 | 2020-01-30 | 株式会社アルバック | 磁気記憶素子、および、磁気記憶素子の製造方法 |
| WO2020166722A1 (ja) * | 2019-02-15 | 2020-08-20 | 国立大学法人東京大学 | スピントロニクス素子及び磁気メモリ装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117356199A (zh) | 2024-01-05 |
| US20240194235A1 (en) | 2024-06-13 |
| WO2022220251A1 (ja) | 2022-10-20 |
| JP7710752B2 (ja) | 2025-07-22 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20231020 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240903 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20241031 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20250121 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250319 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20250603 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20250702 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7710752 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |