JP7707511B2 - ウェハ及びウェハの製造方法 - Google Patents

ウェハ及びウェハの製造方法

Info

Publication number
JP7707511B2
JP7707511B2 JP2021135446A JP2021135446A JP7707511B2 JP 7707511 B2 JP7707511 B2 JP 7707511B2 JP 2021135446 A JP2021135446 A JP 2021135446A JP 2021135446 A JP2021135446 A JP 2021135446A JP 7707511 B2 JP7707511 B2 JP 7707511B2
Authority
JP
Japan
Prior art keywords
region
conductive bumps
area
conductive
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021135446A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023030360A (ja
JP2023030360A5 (https=
Inventor
研吾 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2021135446A priority Critical patent/JP7707511B2/ja
Priority to US17/816,805 priority patent/US12588534B2/en
Priority to KR1020220099076A priority patent/KR20230029522A/ko
Priority to CN202210995634.XA priority patent/CN115910961A/zh
Publication of JP2023030360A publication Critical patent/JP2023030360A/ja
Publication of JP2023030360A5 publication Critical patent/JP2023030360A5/ja
Application granted granted Critical
Publication of JP7707511B2 publication Critical patent/JP7707511B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01233Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01235Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01238Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in gaseous form, e.g. by CVD or PVD
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251Changing the shapes of bumps
    • H10W72/01253Changing the shapes of bumps by etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251Changing the shapes of bumps
    • H10W72/01255Changing the shapes of bumps by using masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/019Manufacture or treatment of bond pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221Structures or relative sizes
    • H10W72/222Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/231Shapes
    • H10W72/232Plan-view shape, i.e. in top view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • H10W72/247Dispositions of multiple bumps
    • H10W72/248Top-view layouts, e.g. mirror arrays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • H10W72/252Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/261Functions other than electrical connecting
    • H10W72/267Multiple bump connectors having different functions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/923Bond pads having multiple stacked layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9415Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/942Dispositions of bond pads relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/944Dispositions of multiple bond pads
    • H10W72/9445Top-view layouts, e.g. mirror arrays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Wire Bonding (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
JP2021135446A 2021-08-23 2021-08-23 ウェハ及びウェハの製造方法 Active JP7707511B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2021135446A JP7707511B2 (ja) 2021-08-23 2021-08-23 ウェハ及びウェハの製造方法
US17/816,805 US12588534B2 (en) 2021-08-23 2022-08-02 Density distribution of conductive bumps on wafer
KR1020220099076A KR20230029522A (ko) 2021-08-23 2022-08-09 웨이퍼 및 웨이퍼의 제조 방법
CN202210995634.XA CN115910961A (zh) 2021-08-23 2022-08-18 晶圆以及晶圆的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021135446A JP7707511B2 (ja) 2021-08-23 2021-08-23 ウェハ及びウェハの製造方法

Publications (3)

Publication Number Publication Date
JP2023030360A JP2023030360A (ja) 2023-03-08
JP2023030360A5 JP2023030360A5 (https=) 2024-04-18
JP7707511B2 true JP7707511B2 (ja) 2025-07-15

Family

ID=85227639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021135446A Active JP7707511B2 (ja) 2021-08-23 2021-08-23 ウェハ及びウェハの製造方法

Country Status (4)

Country Link
US (1) US12588534B2 (https=)
JP (1) JP7707511B2 (https=)
KR (1) KR20230029522A (https=)
CN (1) CN115910961A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240136170A (ko) 2023-03-06 2024-09-13 주식회사 엘지에너지솔루션 가압 부재 및 이를 포함하는 파우치 셀

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003168700A (ja) 2001-09-18 2003-06-13 Seiko Epson Corp 半導体ウエハ、半導体装置及びその製造方法、回路基板並びに電子機器
JP2005093461A (ja) 2003-09-12 2005-04-07 Casio Comput Co Ltd 半導体基板、半導体基板の製造方法および半導体装置の製造方法
JP2007013063A (ja) 2005-07-04 2007-01-18 Fujitsu Ltd 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000100851A (ja) * 1998-09-25 2000-04-07 Sony Corp 半導体部品及びその製造方法、半導体部品の実装構造及びその実装方法
CA2313551A1 (en) 1999-10-21 2001-04-21 International Business Machines Corporation Wafer integrated rigid support ring
JP5869902B2 (ja) 2012-02-14 2016-02-24 ルネサスエレクトロニクス株式会社 半導体装置の製造方法及びウェハ
US9911709B1 (en) * 2016-10-26 2018-03-06 Advanced Semiconductor Engineering, Inc. Semiconductor device and semiconductor manufacturing process
US9905527B1 (en) * 2016-12-15 2018-02-27 Micron Technology, Inc. Uniform electrochemical plating of metal onto arrays of pillars having different lateral densities and related technology
US11469198B2 (en) * 2018-07-16 2022-10-11 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device manufacturing method and associated semiconductor die
KR102879035B1 (ko) * 2020-07-10 2025-10-29 삼성전자주식회사 반도체 패키지

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003168700A (ja) 2001-09-18 2003-06-13 Seiko Epson Corp 半導体ウエハ、半導体装置及びその製造方法、回路基板並びに電子機器
JP2005093461A (ja) 2003-09-12 2005-04-07 Casio Comput Co Ltd 半導体基板、半導体基板の製造方法および半導体装置の製造方法
JP2007013063A (ja) 2005-07-04 2007-01-18 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
JP2023030360A (ja) 2023-03-08
US12588534B2 (en) 2026-03-24
KR20230029522A (ko) 2023-03-03
US20230054800A1 (en) 2023-02-23
CN115910961A (zh) 2023-04-04

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