JP7672430B2 - 磁気抵抗素子を備える磁気センサ及びそのような磁気センサをプログラミングするシステム - Google Patents

磁気抵抗素子を備える磁気センサ及びそのような磁気センサをプログラミングするシステム Download PDF

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JP7672430B2
JP7672430B2 JP2022569043A JP2022569043A JP7672430B2 JP 7672430 B2 JP7672430 B2 JP 7672430B2 JP 2022569043 A JP2022569043 A JP 2022569043A JP 2022569043 A JP2022569043 A JP 2022569043A JP 7672430 B2 JP7672430 B2 JP 7672430B2
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plasmonic
array
magnetic sensor
electromagnetic radiation
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JP2023526785A5 (https=
JP2023526785A (ja
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ティモフィーエフ・アンドレイ
ストレルコフ・ニキータ
チルドレス・ジェフリー
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アレグロ・マイクロシステムズ・リミテッド・ライアビリティ・カンパニー
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0005—Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0094—Sensor arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3945—Heads comprising more than one sensitive element
    • G11B5/3948—Heads comprising more than one sensitive element the sensitive elements being active read-out elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
JP2022569043A 2020-05-28 2021-05-27 磁気抵抗素子を備える磁気センサ及びそのような磁気センサをプログラミングするシステム Active JP7672430B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP20315270.7A EP3916414A1 (en) 2020-05-28 2020-05-28 Magnetic sensor comprising magnetoresistive elements and system for programming such magnetic sensor
EP20315270.7 2020-05-28
PCT/IB2021/054647 WO2021240432A1 (en) 2020-05-28 2021-05-27 Magnetic sensor comprising magnetoresistive elements and system for programming such magnetic sensor

Publications (3)

Publication Number Publication Date
JP2023526785A JP2023526785A (ja) 2023-06-23
JP2023526785A5 JP2023526785A5 (https=) 2025-03-12
JP7672430B2 true JP7672430B2 (ja) 2025-05-07

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JP2022569043A Active JP7672430B2 (ja) 2020-05-28 2021-05-27 磁気抵抗素子を備える磁気センサ及びそのような磁気センサをプログラミングするシステム

Country Status (5)

Country Link
US (1) US12102011B2 (https=)
EP (1) EP3916414A1 (https=)
JP (1) JP7672430B2 (https=)
KR (1) KR102844287B1 (https=)
WO (1) WO2021240432A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116500519A (zh) * 2023-04-15 2023-07-28 哈尔滨理工大学 一种NSiV双色心的磁场与温度双参量测试方法及装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110111133A1 (en) 2009-11-06 2011-05-12 Headway Technologies, Inc. Multi-directional pin anneal of MR sensors with plasmon heating
JP2013525746A (ja) 2010-03-12 2013-06-20 ボード オブ トラスティーズ オブ ザ レランド スタンフォード ジュニア ユニバーシティ 磁気センサに基づく結合反応速度の定量的な分析
US20150132503A1 (en) 2013-11-13 2015-05-14 Seagate Technology Llc Methods of forming near field transducers
US20190066719A1 (en) 2017-08-31 2019-02-28 Seagate Technology Llc Oxidation resistant sensor for heat-assisted magnetic recording

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017026312A (ja) * 2013-12-02 2017-02-02 コニカミノルタ株式会社 三次元磁気センサー
WO2018199068A1 (ja) * 2017-04-25 2018-11-01 コニカミノルタ株式会社 磁気センサー
KR102684719B1 (ko) * 2020-05-14 2024-07-12 삼성전자주식회사 메모리 소자 및 그 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110111133A1 (en) 2009-11-06 2011-05-12 Headway Technologies, Inc. Multi-directional pin anneal of MR sensors with plasmon heating
JP2013525746A (ja) 2010-03-12 2013-06-20 ボード オブ トラスティーズ オブ ザ レランド スタンフォード ジュニア ユニバーシティ 磁気センサに基づく結合反応速度の定量的な分析
US20150132503A1 (en) 2013-11-13 2015-05-14 Seagate Technology Llc Methods of forming near field transducers
US20190066719A1 (en) 2017-08-31 2019-02-28 Seagate Technology Llc Oxidation resistant sensor for heat-assisted magnetic recording

Also Published As

Publication number Publication date
WO2021240432A1 (en) 2021-12-02
KR20230018370A (ko) 2023-02-07
KR102844287B1 (ko) 2025-08-08
US12102011B2 (en) 2024-09-24
JP2023526785A (ja) 2023-06-23
US20230292624A1 (en) 2023-09-14
EP3916414A1 (en) 2021-12-01

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