KR102844287B1 - 자기 저항 요소를 포함하는 자기 센서 및 이러한 자기 센서를 프로그래밍하기 위한 시스템 - Google Patents

자기 저항 요소를 포함하는 자기 센서 및 이러한 자기 센서를 프로그래밍하기 위한 시스템

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Publication number
KR102844287B1
KR102844287B1 KR1020227040830A KR20227040830A KR102844287B1 KR 102844287 B1 KR102844287 B1 KR 102844287B1 KR 1020227040830 A KR1020227040830 A KR 1020227040830A KR 20227040830 A KR20227040830 A KR 20227040830A KR 102844287 B1 KR102844287 B1 KR 102844287B1
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South Korea
Prior art keywords
plasmonic
array
magnetic sensor
electromagnetic radiation
sub
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English (en)
Korean (ko)
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KR20230018370A (ko
Inventor
안드리 티모피브
니키타 스트렐코프
제프리 칠드레스
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알레그로 마이크로시스템스, 엘엘씨
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0005—Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0094—Sensor arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3945—Heads comprising more than one sensitive element
    • G11B5/3948—Heads comprising more than one sensitive element the sensitive elements being active read-out elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
KR1020227040830A 2020-05-28 2021-05-27 자기 저항 요소를 포함하는 자기 센서 및 이러한 자기 센서를 프로그래밍하기 위한 시스템 Active KR102844287B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP20315270.7A EP3916414A1 (en) 2020-05-28 2020-05-28 Magnetic sensor comprising magnetoresistive elements and system for programming such magnetic sensor
EP20315270.7 2020-05-28
PCT/IB2021/054647 WO2021240432A1 (en) 2020-05-28 2021-05-27 Magnetic sensor comprising magnetoresistive elements and system for programming such magnetic sensor

Publications (2)

Publication Number Publication Date
KR20230018370A KR20230018370A (ko) 2023-02-07
KR102844287B1 true KR102844287B1 (ko) 2025-08-08

Family

ID=71607838

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227040830A Active KR102844287B1 (ko) 2020-05-28 2021-05-27 자기 저항 요소를 포함하는 자기 센서 및 이러한 자기 센서를 프로그래밍하기 위한 시스템

Country Status (5)

Country Link
US (1) US12102011B2 (https=)
EP (1) EP3916414A1 (https=)
JP (1) JP7672430B2 (https=)
KR (1) KR102844287B1 (https=)
WO (1) WO2021240432A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116500519A (zh) * 2023-04-15 2023-07-28 哈尔滨理工大学 一种NSiV双色心的磁场与温度双参量测试方法及装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110111133A1 (en) * 2009-11-06 2011-05-12 Headway Technologies, Inc. Multi-directional pin anneal of MR sensors with plasmon heating
US20150132503A1 (en) * 2013-11-13 2015-05-14 Seagate Technology Llc Methods of forming near field transducers
US20190066719A1 (en) 2017-08-31 2019-02-28 Seagate Technology Llc Oxidation resistant sensor for heat-assisted magnetic recording

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5937019B2 (ja) * 2010-03-12 2016-06-22 ザ ボード オブ トラスティーズ オブ ザ レランド スタンフォード ジュニア ユニバーシティー 磁気センサに基づく結合反応速度の定量的な分析
JP2017026312A (ja) * 2013-12-02 2017-02-02 コニカミノルタ株式会社 三次元磁気センサー
WO2018199068A1 (ja) * 2017-04-25 2018-11-01 コニカミノルタ株式会社 磁気センサー
KR102684719B1 (ko) * 2020-05-14 2024-07-12 삼성전자주식회사 메모리 소자 및 그 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110111133A1 (en) * 2009-11-06 2011-05-12 Headway Technologies, Inc. Multi-directional pin anneal of MR sensors with plasmon heating
US20150132503A1 (en) * 2013-11-13 2015-05-14 Seagate Technology Llc Methods of forming near field transducers
US20190066719A1 (en) 2017-08-31 2019-02-28 Seagate Technology Llc Oxidation resistant sensor for heat-assisted magnetic recording

Also Published As

Publication number Publication date
WO2021240432A1 (en) 2021-12-02
KR20230018370A (ko) 2023-02-07
US12102011B2 (en) 2024-09-24
JP2023526785A (ja) 2023-06-23
US20230292624A1 (en) 2023-09-14
JP7672430B2 (ja) 2025-05-07
EP3916414A1 (en) 2021-12-01

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