JP7647887B2 - 半導体光デバイス - Google Patents

半導体光デバイス Download PDF

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Publication number
JP7647887B2
JP7647887B2 JP2023531289A JP2023531289A JP7647887B2 JP 7647887 B2 JP7647887 B2 JP 7647887B2 JP 2023531289 A JP2023531289 A JP 2023531289A JP 2023531289 A JP2023531289 A JP 2023531289A JP 7647887 B2 JP7647887 B2 JP 7647887B2
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JP
Japan
Prior art keywords
core
cladding layer
optical
substrate
optical waveguide
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JP2023531289A
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English (en)
Japanese (ja)
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JPWO2023276106A1 (https=
Inventor
優 山岡
慎治 松尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
NTT Inc USA
Original Assignee
Nippon Telegraph and Telephone Corp
NTT Inc USA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/125—Bends, branchings or intersections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Integrated Circuits (AREA)
JP2023531289A 2021-07-01 2021-07-01 半導体光デバイス Active JP7647887B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/024936 WO2023276106A1 (ja) 2021-07-01 2021-07-01 半導体光デバイス

Publications (2)

Publication Number Publication Date
JPWO2023276106A1 JPWO2023276106A1 (https=) 2023-01-05
JP7647887B2 true JP7647887B2 (ja) 2025-03-18

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Family Applications (1)

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JP2023531289A Active JP7647887B2 (ja) 2021-07-01 2021-07-01 半導体光デバイス

Country Status (3)

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US (1) US20240291233A1 (https=)
JP (1) JP7647887B2 (https=)
WO (1) WO2023276106A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024261803A1 (ja) * 2023-06-19 2024-12-26 日本電信電話株式会社 半導体デバイス

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012011370A1 (ja) 2010-07-23 2012-01-26 日本電気株式会社 光接続構造
US20150378100A1 (en) 2014-06-26 2015-12-31 Alcatel-Lucent Usa, Inc. Monolithic silicon lasers
US20170214216A1 (en) 2014-06-26 2017-07-27 Alcatel Lucent Usa, Inc. Hybrid semiconductor lasers
JP2018006638A (ja) 2016-07-06 2018-01-11 日本電信電話株式会社 光半導体素子
JP2019003029A (ja) 2017-06-15 2019-01-10 日本電信電話株式会社 光導波路およびその製造方法
JP2019083268A (ja) 2017-10-31 2019-05-30 日本電信電話株式会社 半導体レーザ
US20190207362A1 (en) 2015-12-17 2019-07-04 Finisar Corporation Dual layer grating coupler
WO2020245935A1 (ja) 2019-06-05 2020-12-10 日本電信電話株式会社 光デバイス

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012011370A1 (ja) 2010-07-23 2012-01-26 日本電気株式会社 光接続構造
US20150378100A1 (en) 2014-06-26 2015-12-31 Alcatel-Lucent Usa, Inc. Monolithic silicon lasers
US20170214216A1 (en) 2014-06-26 2017-07-27 Alcatel Lucent Usa, Inc. Hybrid semiconductor lasers
US20190207362A1 (en) 2015-12-17 2019-07-04 Finisar Corporation Dual layer grating coupler
JP2018006638A (ja) 2016-07-06 2018-01-11 日本電信電話株式会社 光半導体素子
JP2019003029A (ja) 2017-06-15 2019-01-10 日本電信電話株式会社 光導波路およびその製造方法
JP2019083268A (ja) 2017-10-31 2019-05-30 日本電信電話株式会社 半導体レーザ
WO2020245935A1 (ja) 2019-06-05 2020-12-10 日本電信電話株式会社 光デバイス

Also Published As

Publication number Publication date
US20240291233A1 (en) 2024-08-29
JPWO2023276106A1 (https=) 2023-01-05
WO2023276106A1 (ja) 2023-01-05

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