JP7647673B2 - ポジ型レジスト材料及びパターン形成方法 - Google Patents
ポジ型レジスト材料及びパターン形成方法 Download PDFInfo
- Publication number
- JP7647673B2 JP7647673B2 JP2022077365A JP2022077365A JP7647673B2 JP 7647673 B2 JP7647673 B2 JP 7647673B2 JP 2022077365 A JP2022077365 A JP 2022077365A JP 2022077365 A JP2022077365 A JP 2022077365A JP 7647673 B2 JP7647673 B2 JP 7647673B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- carbon atoms
- bond
- atom
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/22—Oxygen
- C08F212/24—Phenols or alcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1805—C5-(meth)acrylate, e.g. pentyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1806—C6-(meth)acrylate, e.g. (cyclo)hexyl (meth)acrylate or phenyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1808—C8-(meth)acrylate, e.g. isooctyl (meth)acrylate or 2-ethylhexyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/22—Esters containing halogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/281—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing only one oxygen, e.g. furfuryl (meth)acrylate or 2-methoxyethyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/34—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate
- C08F220/36—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate containing oxygen in addition to the carboxy oxygen, e.g. 2-N-morpholinoethyl (meth)acrylate or 2-isocyanatoethyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
- C09D125/18—Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Emergency Medicine (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021090241 | 2021-05-28 | ||
| JP2021090241 | 2021-05-28 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022183029A JP2022183029A (ja) | 2022-12-08 |
| JP2022183029A5 JP2022183029A5 (https=) | 2023-01-27 |
| JP7647673B2 true JP7647673B2 (ja) | 2025-03-18 |
Family
ID=84329224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022077365A Active JP7647673B2 (ja) | 2021-05-28 | 2022-05-10 | ポジ型レジスト材料及びパターン形成方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US12422751B2 (https=) |
| JP (1) | JP7647673B2 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7757911B2 (ja) * | 2021-10-07 | 2025-10-22 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140127625A1 (en) | 2011-04-25 | 2014-05-08 | Orthogonal, Inc. | Orthogonal solvents and compatible photoresists for the photolithographic patterning of organic electronic devices |
| CN103980417A (zh) | 2014-04-24 | 2014-08-13 | 东南大学 | 新型树枝状聚合物类正性光刻胶树脂及其制备方法与应用 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06230572A (ja) * | 1993-02-02 | 1994-08-19 | Japan Synthetic Rubber Co Ltd | 感放射線性組成物 |
| JP2001114832A (ja) | 1999-10-18 | 2001-04-24 | Daicel Chem Ind Ltd | 新規なメタクリル酸エステル及びその製法、並びに新規なポリメタクリル酸エステル及びその製法 |
| FR2872514B1 (fr) | 2004-07-02 | 2007-03-02 | Oreal | Nouveaux copolymeres ethyleniques, compositions les comprenant et procede de traitement |
| JP4794835B2 (ja) | 2004-08-03 | 2011-10-19 | 東京応化工業株式会社 | 高分子化合物、酸発生剤、ポジ型レジスト組成物、およびレジストパターン形成方法 |
| JP4425776B2 (ja) | 2004-12-24 | 2010-03-03 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
| EP1783548B1 (en) | 2005-11-08 | 2017-03-08 | Rohm and Haas Electronic Materials LLC | Method of forming a patterned layer on a substrate |
| JP2008133312A (ja) | 2006-11-27 | 2008-06-12 | Mitsubishi Rayon Co Ltd | 重合体、レジスト組成物及びパターンが形成された基板の製造方法 |
| JP5178220B2 (ja) | 2008-01-31 | 2013-04-10 | 東京応化工業株式会社 | レジスト組成物およびレジストパターン形成方法 |
| US8658735B2 (en) | 2008-08-28 | 2014-02-25 | Tokyo University Of Science Educational Foundation Administrative Organization | Polymerizable monomer, graft copolymer, and surface modifier |
| US8753615B2 (en) | 2009-04-09 | 2014-06-17 | L'oreal | Ethylene copolymer with PEG, cationic and anionic units, cosmetic composition including same and treatment method |
| JP5318697B2 (ja) | 2009-08-11 | 2013-10-16 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
| JP5598350B2 (ja) | 2010-02-16 | 2014-10-01 | 信越化学工業株式会社 | 電子線用又はeuv用化学増幅ネガ型レジスト組成物及びパターン形成方法 |
| JP5598351B2 (ja) | 2010-02-16 | 2014-10-01 | 信越化学工業株式会社 | 電子線用又はeuv用化学増幅ポジ型レジスト組成物及びパターン形成方法 |
| KR102025782B1 (ko) | 2012-03-19 | 2019-09-26 | 제이에스알 가부시끼가이샤 | 레지스트 패턴 형성 방법 및 포토레지스트 조성물 |
| KR102182234B1 (ko) | 2012-07-31 | 2020-11-24 | 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 | 포토레지스트 조성물 및 포토리소그래픽 패턴의 형성 방법 |
| TWI523872B (zh) | 2013-02-25 | 2016-03-01 | 羅門哈斯電子材料有限公司 | 光敏共聚物,包括該共聚物之光阻,及形成電子裝置之方法 |
| JP6115377B2 (ja) | 2013-07-24 | 2017-04-19 | Jsr株式会社 | 樹脂組成物及びレジストパターン形成方法 |
| JP6044557B2 (ja) * | 2014-01-24 | 2016-12-14 | 信越化学工業株式会社 | ポジ型レジスト材料及びこれを用いたパターン形成方法 |
| JP6459759B2 (ja) | 2014-05-26 | 2019-01-30 | 信越化学工業株式会社 | パターン形成方法及びシュリンク剤 |
| US9696625B2 (en) | 2014-10-17 | 2017-07-04 | Tokyo Ohka Kogyo Co., Ltd. | Method of forming resist pattern |
| JP6476207B2 (ja) | 2014-12-17 | 2019-02-27 | 富士フイルム株式会社 | パターン形成方法及び電子デバイスの製造方法 |
| JP6607679B2 (ja) | 2015-02-12 | 2019-11-20 | 住友化学株式会社 | 樹脂、レジスト組成物及びレジストパターンの製造方法 |
| JP6520753B2 (ja) | 2016-02-19 | 2019-05-29 | 信越化学工業株式会社 | ポジ型レジスト材料、及びパターン形成方法 |
| JP7264019B2 (ja) | 2018-12-14 | 2023-04-25 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
| JP7400677B2 (ja) * | 2019-10-21 | 2023-12-19 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
| JP7494731B2 (ja) * | 2020-02-04 | 2024-06-04 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
-
2022
- 2022-05-04 US US17/736,267 patent/US12422751B2/en active Active
- 2022-05-10 JP JP2022077365A patent/JP7647673B2/ja active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140127625A1 (en) | 2011-04-25 | 2014-05-08 | Orthogonal, Inc. | Orthogonal solvents and compatible photoresists for the photolithographic patterning of organic electronic devices |
| CN103980417A (zh) | 2014-04-24 | 2014-08-13 | 东南大学 | 新型树枝状聚合物类正性光刻胶树脂及其制备方法与应用 |
Also Published As
| Publication number | Publication date |
|---|---|
| US12422751B2 (en) | 2025-09-23 |
| JP2022183029A (ja) | 2022-12-08 |
| US20230029535A1 (en) | 2023-02-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7639675B2 (ja) | ポジ型レジスト材料及びパターン形成方法 | |
| JP7400677B2 (ja) | ポジ型レジスト材料及びパターン形成方法 | |
| JP7637598B2 (ja) | ポジ型レジスト材料及びパターン形成方法 | |
| JP7283373B2 (ja) | 化学増幅レジスト材料及びパターン形成方法 | |
| JP7494731B2 (ja) | ポジ型レジスト材料及びパターン形成方法 | |
| JP7666321B2 (ja) | ポジ型レジスト材料及びパターン形成方法 | |
| JP7550731B2 (ja) | ポジ型レジスト材料及びパターン形成方法 | |
| KR102682172B1 (ko) | 포지티브형 레지스트 조성물 및 패턴 형성 방법 | |
| JP7622544B2 (ja) | 化学増幅ポジ型レジスト材料及びパターン形成方法 | |
| JP7264019B2 (ja) | ポジ型レジスト材料及びパターン形成方法 | |
| JP7468295B2 (ja) | ポジ型レジスト材料及びパターン形成方法 | |
| JP7644050B2 (ja) | ポジ型レジスト材料及びパターン形成方法 | |
| JP7626044B2 (ja) | ポジ型レジスト材料及びパターン形成方法 | |
| JP2024154791A (ja) | レジスト材料、レジスト組成物、及びパターン形成方法 | |
| JP7673652B2 (ja) | ポジ型レジスト材料及びパターン形成方法 | |
| JP7691963B2 (ja) | ポジ型レジスト材料及びパターン形成方法 | |
| KR102925415B1 (ko) | 레지스트 재료, 레지스트 조성물, 패턴 형성 방법 및 모노머 | |
| JP7647673B2 (ja) | ポジ型レジスト材料及びパターン形成方法 | |
| KR102712295B1 (ko) | 포지티브형 레지스트 재료 및 패턴 형성 방법 | |
| JP7768069B2 (ja) | 化学増幅ポジ型レジスト材料及びパターン形成方法 | |
| JP2024154790A (ja) | モノマー、レジスト材料、レジスト組成物、及びパターン形成方法 | |
| JP7757911B2 (ja) | ポジ型レジスト材料及びパターン形成方法 | |
| KR102933425B1 (ko) | 포지티브형 레지스트 재료 및 패턴 형성 방법 | |
| JP7768065B2 (ja) | 化学増幅ポジ型レジスト材料及びパターン形成方法 | |
| JP2025022775A (ja) | レジスト材料及びパターン形成方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230119 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20240423 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20241225 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20250204 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20250217 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7647673 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |