JP7646380B2 - 光電変換装置、光電変換システム、移動体 - Google Patents

光電変換装置、光電変換システム、移動体 Download PDF

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JP7646380B2
JP7646380B2 JP2021016446A JP2021016446A JP7646380B2 JP 7646380 B2 JP7646380 B2 JP 7646380B2 JP 2021016446 A JP2021016446 A JP 2021016446A JP 2021016446 A JP2021016446 A JP 2021016446A JP 7646380 B2 JP7646380 B2 JP 7646380B2
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signal processing
photoelectric conversion
conversion device
processing unit
processing
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JP2022119374A (ja
JP2022119374A5 (enExample
Inventor
慧 落合
佳明 高田
雅紀 佐藤
昌弘 小林
大祐 小林
哲也 板野
七朗 中辻
康裕 小黒
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Canon Inc
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Canon Inc
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Priority to JP2021016446A priority Critical patent/JP7646380B2/ja
Priority to KR1020220011169A priority patent/KR20220112686A/ko
Priority to EP22154081.8A priority patent/EP4040779A1/en
Priority to CN202210113180.9A priority patent/CN114938434A/zh
Priority to US17/591,496 priority patent/US11849238B2/en
Publication of JP2022119374A publication Critical patent/JP2022119374A/ja
Publication of JP2022119374A5 publication Critical patent/JP2022119374A5/ja
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Software Systems (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Evolutionary Computation (AREA)
  • Medical Informatics (AREA)
  • Data Mining & Analysis (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Artificial Intelligence (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
JP2021016446A 2021-02-04 2021-02-04 光電変換装置、光電変換システム、移動体 Active JP7646380B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2021016446A JP7646380B2 (ja) 2021-02-04 2021-02-04 光電変換装置、光電変換システム、移動体
KR1020220011169A KR20220112686A (ko) 2021-02-04 2022-01-26 광전 변환 장치, 광전 변환 시스템, 이동체
EP22154081.8A EP4040779A1 (en) 2021-02-04 2022-01-28 Photoelectric conversion apparatus, photoelectric conversion system, moving body
CN202210113180.9A CN114938434A (zh) 2021-02-04 2022-01-30 光电转换装置、光电转换系统、移动体
US17/591,496 US11849238B2 (en) 2021-02-04 2022-02-02 Photoelectric conversion apparatus, photoelectric conversion system, moving body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021016446A JP7646380B2 (ja) 2021-02-04 2021-02-04 光電変換装置、光電変換システム、移動体

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JP2022119374A JP2022119374A (ja) 2022-08-17
JP2022119374A5 JP2022119374A5 (enExample) 2024-02-02
JP7646380B2 true JP7646380B2 (ja) 2025-03-17

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US (1) US11849238B2 (enExample)
EP (1) EP4040779A1 (enExample)
JP (1) JP7646380B2 (enExample)
KR (1) KR20220112686A (enExample)
CN (1) CN114938434A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6704944B2 (ja) * 2018-02-09 2020-06-03 キヤノン株式会社 撮像装置、撮像システム、移動体
JP7654415B2 (ja) * 2021-02-04 2025-04-01 キヤノン株式会社 光電変換装置、機器
JPWO2023132002A1 (enExample) * 2022-01-05 2023-07-13
CN120380774A (zh) * 2022-12-23 2025-07-25 索尼半导体解决方案公司 光检测装置及用于光检测装置的控制方法

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JP2012118081A (ja) 2011-12-28 2012-06-21 Fujifilm Corp 放射線撮影装置
JP2019140534A (ja) 2018-02-09 2019-08-22 キヤノン株式会社 撮像装置、撮像システム、移動体
JP2020025263A (ja) 2018-07-31 2020-02-13 ソニーセミコンダクタソリューションズ株式会社 積層型受光センサ及び電子機器
US20200098815A1 (en) 2017-04-04 2020-03-26 Sony Semiconductor Solutions Corporation Solid-state imaging device and electronic apparatus
US20200321374A1 (en) 2019-04-05 2020-10-08 Waymo Llc Image sensor architecture

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JP4500434B2 (ja) 2000-11-28 2010-07-14 キヤノン株式会社 撮像装置及び撮像システム、並びに撮像方法
JP6245474B2 (ja) 2014-04-21 2017-12-13 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、並びに、電子機器
JP6912922B2 (ja) 2017-04-12 2021-08-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
JP7091052B2 (ja) 2017-10-25 2022-06-27 キヤノン株式会社 撮像素子及び撮像装置
CN111133750B (zh) 2017-09-29 2022-05-24 佳能株式会社 图像传感器和摄像设备
WO2020027161A1 (ja) * 2018-07-31 2020-02-06 ソニーセミコンダクタソリューションズ株式会社 積層型受光センサ及び電子機器
WO2020027230A1 (ja) 2018-07-31 2020-02-06 ソニーセミコンダクタソリューションズ株式会社 積層型受光センサ及び車載撮像装置
JP7402606B2 (ja) * 2018-10-31 2023-12-21 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
JP2020136903A (ja) * 2019-02-19 2020-08-31 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
US11424282B2 (en) * 2019-02-25 2022-08-23 Canon Kabushiki Kaisha Semiconductor apparatus and equipment
JP2021005846A (ja) 2019-06-27 2021-01-14 オリンパス株式会社 積層型撮像デバイス、撮像装置、撮像方法、学習方法及び画像読み出し回路
US11941519B2 (en) * 2019-12-02 2024-03-26 Waymo Llc Machine learning training platform
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Publication number Priority date Publication date Assignee Title
JP2007208685A (ja) 2006-02-02 2007-08-16 Nikon Corp シフトレジスタ回路及びこれを用いた固体撮像装置
JP2012118081A (ja) 2011-12-28 2012-06-21 Fujifilm Corp 放射線撮影装置
US20200098815A1 (en) 2017-04-04 2020-03-26 Sony Semiconductor Solutions Corporation Solid-state imaging device and electronic apparatus
JP2019140534A (ja) 2018-02-09 2019-08-22 キヤノン株式会社 撮像装置、撮像システム、移動体
JP2020025263A (ja) 2018-07-31 2020-02-13 ソニーセミコンダクタソリューションズ株式会社 積層型受光センサ及び電子機器
US20200321374A1 (en) 2019-04-05 2020-10-08 Waymo Llc Image sensor architecture

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US11849238B2 (en) 2023-12-19
US20220247966A1 (en) 2022-08-04
KR20220112686A (ko) 2022-08-11
JP2022119374A (ja) 2022-08-17
EP4040779A1 (en) 2022-08-10
CN114938434A (zh) 2022-08-23

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