CN114938434A - 光电转换装置、光电转换系统、移动体 - Google Patents

光电转换装置、光电转换系统、移动体 Download PDF

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Publication number
CN114938434A
CN114938434A CN202210113180.9A CN202210113180A CN114938434A CN 114938434 A CN114938434 A CN 114938434A CN 202210113180 A CN202210113180 A CN 202210113180A CN 114938434 A CN114938434 A CN 114938434A
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China
Prior art keywords
signal processing
processing unit
photoelectric conversion
substrate
processing
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Pending
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CN202210113180.9A
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English (en)
Chinese (zh)
Inventor
落合慧
高田佳明
佐藤雅纪
小林昌弘
小林大祐
板野哲也
中辻七朗
小黑康裕
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Publication of CN114938434A publication Critical patent/CN114938434A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Software Systems (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Evolutionary Computation (AREA)
  • Medical Informatics (AREA)
  • Data Mining & Analysis (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Artificial Intelligence (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
CN202210113180.9A 2021-02-04 2022-01-30 光电转换装置、光电转换系统、移动体 Pending CN114938434A (zh)

Applications Claiming Priority (2)

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JP2021016446A JP7646380B2 (ja) 2021-02-04 2021-02-04 光電変換装置、光電変換システム、移動体
JP2021-016446 2021-02-04

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CN114938434A true CN114938434A (zh) 2022-08-23

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US (1) US11849238B2 (enExample)
EP (1) EP4040779A1 (enExample)
JP (1) JP7646380B2 (enExample)
KR (1) KR20220112686A (enExample)
CN (1) CN114938434A (enExample)

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JP6704944B2 (ja) * 2018-02-09 2020-06-03 キヤノン株式会社 撮像装置、撮像システム、移動体
JP7654415B2 (ja) * 2021-02-04 2025-04-01 キヤノン株式会社 光電変換装置、機器
JPWO2023132002A1 (enExample) * 2022-01-05 2023-07-13
KR20250126026A (ko) * 2022-12-23 2025-08-22 소니 세미컨덕터 솔루션즈 가부시키가이샤 광 검출 장치, 및 광 검출 장치의 제어 방법

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WO2020027161A1 (ja) * 2018-07-31 2020-02-06 ソニーセミコンダクタソリューションズ株式会社 積層型受光センサ及び電子機器
WO2020090509A1 (ja) * 2018-10-31 2020-05-07 ソニーセミコンダクタソリューションズ株式会社 積層型受光センサ及び電子機器

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JP2007208685A (ja) 2006-02-02 2007-08-16 Nikon Corp シフトレジスタ回路及びこれを用いた固体撮像装置
JP5143278B2 (ja) 2011-12-28 2013-02-13 富士フイルム株式会社 放射線撮影装置
JP6245474B2 (ja) 2014-04-21 2017-12-13 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、並びに、電子機器
WO2018186198A1 (ja) 2017-04-04 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
JP6912922B2 (ja) 2017-04-12 2021-08-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
JP7091052B2 (ja) 2017-10-25 2022-06-27 キヤノン株式会社 撮像素子及び撮像装置
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WO2020027230A1 (ja) 2018-07-31 2020-02-06 ソニーセミコンダクタソリューションズ株式会社 積層型受光センサ及び車載撮像装置
JP2020136903A (ja) * 2019-02-19 2020-08-31 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
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WO2020027161A1 (ja) * 2018-07-31 2020-02-06 ソニーセミコンダクタソリューションズ株式会社 積層型受光センサ及び電子機器
WO2020090509A1 (ja) * 2018-10-31 2020-05-07 ソニーセミコンダクタソリューションズ株式会社 積層型受光センサ及び電子機器

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JP2022119374A (ja) 2022-08-17
US11849238B2 (en) 2023-12-19
US20220247966A1 (en) 2022-08-04
EP4040779A1 (en) 2022-08-10
JP7646380B2 (ja) 2025-03-17
KR20220112686A (ko) 2022-08-11

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