JP7635123B2 - 撮像装置 - Google Patents

撮像装置 Download PDF

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Publication number
JP7635123B2
JP7635123B2 JP2021527643A JP2021527643A JP7635123B2 JP 7635123 B2 JP7635123 B2 JP 7635123B2 JP 2021527643 A JP2021527643 A JP 2021527643A JP 2021527643 A JP2021527643 A JP 2021527643A JP 7635123 B2 JP7635123 B2 JP 7635123B2
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substrate
pixel
imaging device
pixels
sensor
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Japanese (ja)
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JPWO2020262383A1 (https=
Inventor
浩史 山下
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2021527643A 2019-06-26 2020-06-23 撮像装置 Active JP7635123B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019118912 2019-06-26
JP2019118912 2019-06-26
PCT/JP2020/024622 WO2020262383A1 (ja) 2019-06-26 2020-06-23 撮像装置

Publications (2)

Publication Number Publication Date
JPWO2020262383A1 JPWO2020262383A1 (https=) 2020-12-30
JP7635123B2 true JP7635123B2 (ja) 2025-02-25

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JP2021527643A Active JP7635123B2 (ja) 2019-06-26 2020-06-23 撮像装置

Country Status (5)

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US (1) US12230660B2 (https=)
JP (1) JP7635123B2 (https=)
CN (1) CN113940058B (https=)
TW (1) TWI888385B (https=)
WO (1) WO2020262383A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114567734B (zh) * 2022-03-04 2025-02-28 三星半导体(中国)研究开发有限公司 图像传感器、形成像素的方法、像素读出电路和校准方法
CN116801121B (zh) * 2022-03-09 2025-08-29 思特威(上海)电子科技股份有限公司 像素结构、图像传感器、电子设备及控制方法
FR3135826B1 (fr) * 2022-05-19 2025-09-26 Commissariat Energie Atomique Capteur d’images
WO2025142996A1 (ja) * 2023-12-28 2025-07-03 ソニーセミコンダクタソリューションズ株式会社 光検出装置
CN120475272B (zh) * 2025-06-30 2025-10-10 深圳锐视智芯科技有限公司 像素、图像传感器、成像系统、操作方法、设备和介质

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007228460A (ja) 2006-02-27 2007-09-06 Mitsumasa Koyanagi 集積センサを搭載した積層型半導体装置
JP2011138841A (ja) 2009-12-26 2011-07-14 Canon Inc 固体撮像装置および撮像システム
JP2012104753A (ja) 2010-11-12 2012-05-31 Sony Corp 固体撮像装置及び電子機器
JP2012124318A (ja) 2010-12-08 2012-06-28 Sony Corp 固体撮像素子の製造方法、固体撮像素子、および電子機器
JP2014022561A (ja) 2012-07-18 2014-02-03 Sony Corp 固体撮像装置、及び、電子機器
JP2015032687A (ja) 2013-08-02 2015-02-16 ソニー株式会社 撮像素子、電子機器、および撮像素子の製造方法
WO2017126326A1 (ja) 2016-01-20 2017-07-27 ソニー株式会社 固体撮像装置およびその駆動方法、並びに電子機器
JP2018190766A (ja) 2017-04-28 2018-11-29 ソニーセミコンダクタソリューションズ株式会社 半導体デバイス、製造方法、撮像素子、および電子機器

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JP2009222910A (ja) * 2008-03-14 2009-10-01 Sony Corp 表示装置
JP5985136B2 (ja) 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器
KR101460868B1 (ko) * 2009-07-10 2014-11-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP4987917B2 (ja) 2009-08-19 2012-08-01 株式会社東芝 固体撮像装置の製造方法
JP5471174B2 (ja) * 2009-08-28 2014-04-16 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5482025B2 (ja) * 2009-08-28 2014-04-23 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5564909B2 (ja) * 2009-11-30 2014-08-06 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP2014099582A (ja) * 2012-10-18 2014-05-29 Sony Corp 固体撮像装置
JP2014225536A (ja) * 2013-05-15 2014-12-04 キヤノン株式会社 固体撮像装置及びカメラ
KR102621066B1 (ko) * 2016-03-22 2024-01-08 에스케이하이닉스 주식회사 이미지 센서 및 그 제조 방법
KR102661391B1 (ko) * 2016-10-12 2024-04-26 삼성전자주식회사 이미지 센서
WO2019130702A1 (ja) * 2017-12-27 2019-07-04 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JP2020096225A (ja) * 2018-12-10 2020-06-18 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び電子機器
TW202127637A (zh) * 2019-11-19 2021-07-16 日商索尼半導體解決方案公司 受光元件、測距模組
EP4160685A4 (en) * 2020-05-29 2023-10-25 Sony Semiconductor Solutions Corporation IMAGING ELEMENT AND IMAGING DEVICE

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007228460A (ja) 2006-02-27 2007-09-06 Mitsumasa Koyanagi 集積センサを搭載した積層型半導体装置
JP2011138841A (ja) 2009-12-26 2011-07-14 Canon Inc 固体撮像装置および撮像システム
JP2012104753A (ja) 2010-11-12 2012-05-31 Sony Corp 固体撮像装置及び電子機器
JP2012124318A (ja) 2010-12-08 2012-06-28 Sony Corp 固体撮像素子の製造方法、固体撮像素子、および電子機器
JP2014022561A (ja) 2012-07-18 2014-02-03 Sony Corp 固体撮像装置、及び、電子機器
JP2015032687A (ja) 2013-08-02 2015-02-16 ソニー株式会社 撮像素子、電子機器、および撮像素子の製造方法
WO2017126326A1 (ja) 2016-01-20 2017-07-27 ソニー株式会社 固体撮像装置およびその駆動方法、並びに電子機器
JP2018190766A (ja) 2017-04-28 2018-11-29 ソニーセミコンダクタソリューションズ株式会社 半導体デバイス、製造方法、撮像素子、および電子機器

Also Published As

Publication number Publication date
JPWO2020262383A1 (https=) 2020-12-30
US12230660B2 (en) 2025-02-18
CN113940058A (zh) 2022-01-14
TWI888385B (zh) 2025-07-01
TW202109862A (zh) 2021-03-01
CN113940058B (zh) 2025-05-27
US20220359602A1 (en) 2022-11-10
WO2020262383A1 (ja) 2020-12-30

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