JP7604201B2 - 光電変換装置、光電変換システム、移動体、半導体基板、光電変換装置の駆動方法 - Google Patents

光電変換装置、光電変換システム、移動体、半導体基板、光電変換装置の駆動方法 Download PDF

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JP7604201B2
JP7604201B2 JP2020201214A JP2020201214A JP7604201B2 JP 7604201 B2 JP7604201 B2 JP 7604201B2 JP 2020201214 A JP2020201214 A JP 2020201214A JP 2020201214 A JP2020201214 A JP 2020201214A JP 7604201 B2 JP7604201 B2 JP 7604201B2
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current source
photoelectric conversion
conversion device
output line
pixels
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Japanese (ja)
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JP2022089013A5 (https=
JP2022089013A (ja
Inventor
秀央 小林
蒼 長谷川
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Canon Inc
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Canon Inc
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Priority to JP2020201214A priority Critical patent/JP7604201B2/ja
Priority to US17/537,282 priority patent/US12177587B2/en
Publication of JP2022089013A publication Critical patent/JP2022089013A/ja
Publication of JP2022089013A5 publication Critical patent/JP2022089013A5/ja
Priority to US18/948,251 priority patent/US20250071441A1/en
Priority to JP2024214480A priority patent/JP2025026616A/ja
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/618—Noise processing, e.g. detecting, correcting, reducing or removing noise for random or high-frequency noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/569—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection
    • G05F1/573—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection with overcurrent detector
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/78—A comparator being used in a controlling circuit of an amplifier
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/441—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading contiguous pixels from selected rows or columns of the array, e.g. interlaced scanning
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/443—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading pixels from selected two-dimensional [2D] regions of the array, e.g. for windowing or digital zooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/445—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by skipping some contiguous pixels within the read portion of the array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/447—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by preserving the colour pattern with or without loss of information
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/531—Control of the integration time by controlling rolling shutters in CMOS SSIS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2020201214A 2020-12-03 2020-12-03 光電変換装置、光電変換システム、移動体、半導体基板、光電変換装置の駆動方法 Active JP7604201B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2020201214A JP7604201B2 (ja) 2020-12-03 2020-12-03 光電変換装置、光電変換システム、移動体、半導体基板、光電変換装置の駆動方法
US17/537,282 US12177587B2 (en) 2020-12-03 2021-11-29 Photoelectric conversion apparatus, photoelectric conversion system, moving body, semiconductor substrate, and method for driving photoelectric conversion apparatus
US18/948,251 US20250071441A1 (en) 2020-12-03 2024-11-14 Photoelectric conversion apparatus, photoelectric conversion system, moving body, semiconductor substrate, and method for driving photoelectric conversion apparatus
JP2024214480A JP2025026616A (ja) 2020-12-03 2024-12-09 光電変換装置、光電変換システム、移動体、半導体基板、光電変換装置の駆動方法

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JP2020201214A JP7604201B2 (ja) 2020-12-03 2020-12-03 光電変換装置、光電変換システム、移動体、半導体基板、光電変換装置の駆動方法

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JP2022089013A5 JP2022089013A5 (https=) 2023-12-07
JP7604201B2 true JP7604201B2 (ja) 2024-12-23

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JP2024214480A Pending JP2025026616A (ja) 2020-12-03 2024-12-09 光電変換装置、光電変換システム、移動体、半導体基板、光電変換装置の駆動方法

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Families Citing this family (2)

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Publication number Priority date Publication date Assignee Title
US20230117988A1 (en) * 2021-10-20 2023-04-20 Canon Kabushiki Kaisha Photoelectric conversion device, light emitting device, photoelectric conversion system, and moving body
FR3163800A1 (fr) * 2024-06-19 2025-12-26 Stmicroelectronics International N.V. Système de lecture d’une charge contenue dans une photodiode d’un pixel et procédé associé

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JP2007142738A (ja) 2005-11-17 2007-06-07 Sony Corp 物理情報取得方法および物理情報取得装置
JP2009296364A (ja) 2008-06-05 2009-12-17 Canon Inc 撮像装置、及び撮像システム
JP2010246012A (ja) 2009-04-09 2010-10-28 Olympus Corp 固体撮像装置およびカメラシステム
JP2015126043A (ja) 2013-12-26 2015-07-06 ソニー株式会社 電子デバイス
US20180205886A1 (en) 2017-01-16 2018-07-19 Samsung Electronics Co., Ltd. Image sensor and method of operating the same

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JP2008187565A (ja) 2007-01-31 2008-08-14 Sony Corp 固体撮像装置及び撮像装置
JP2010147614A (ja) * 2008-12-16 2010-07-01 Panasonic Corp 固体撮像装置およびその駆動方法、撮像装置
WO2012001870A1 (ja) * 2010-07-01 2012-01-05 パナソニック株式会社 固体撮像装置
JP2012165168A (ja) * 2011-02-07 2012-08-30 Sony Corp 半導体装置、物理情報取得装置、及び、信号読出し方法
JP2013121027A (ja) * 2011-12-07 2013-06-17 Sony Corp 固体撮像素子およびその駆動方法、カメラシステム
JP2014239316A (ja) * 2013-06-07 2014-12-18 キヤノン株式会社 撮像装置およびその制御方法
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JP2007142738A (ja) 2005-11-17 2007-06-07 Sony Corp 物理情報取得方法および物理情報取得装置
JP2009296364A (ja) 2008-06-05 2009-12-17 Canon Inc 撮像装置、及び撮像システム
JP2010246012A (ja) 2009-04-09 2010-10-28 Olympus Corp 固体撮像装置およびカメラシステム
JP2015126043A (ja) 2013-12-26 2015-07-06 ソニー株式会社 電子デバイス
US20180205886A1 (en) 2017-01-16 2018-07-19 Samsung Electronics Co., Ltd. Image sensor and method of operating the same

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JP2022089013A (ja) 2022-06-15
US12177587B2 (en) 2024-12-24
US20220182567A1 (en) 2022-06-09
US20250071441A1 (en) 2025-02-27
JP2025026616A (ja) 2025-02-21

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