JP7603059B2 - 撮像装置および電子機器 - Google Patents

撮像装置および電子機器 Download PDF

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Publication number
JP7603059B2
JP7603059B2 JP2022509744A JP2022509744A JP7603059B2 JP 7603059 B2 JP7603059 B2 JP 7603059B2 JP 2022509744 A JP2022509744 A JP 2022509744A JP 2022509744 A JP2022509744 A JP 2022509744A JP 7603059 B2 JP7603059 B2 JP 7603059B2
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transistor
circuit
electrically connected
drain
layer
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Japanese (ja)
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JPWO2021191719A1 (https=
JPWO2021191719A5 (https=
Inventor
丈也 廣瀬
誠一 米田
広樹 井上
隆之 池田
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JPWO2021191719A1 publication Critical patent/JPWO2021191719A1/ja
Publication of JPWO2021191719A5 publication Critical patent/JPWO2021191719A5/ja
Priority to JP2024214402A priority Critical patent/JP7781246B2/ja
Application granted granted Critical
Publication of JP7603059B2 publication Critical patent/JP7603059B2/ja
Priority to JP2025202950A priority patent/JP2026026156A/ja
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/705—Pixels for depth measurement, e.g. RGBZ
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Thin Film Transistor (AREA)
  • Image Processing (AREA)
JP2022509744A 2020-03-27 2021-03-15 撮像装置および電子機器 Active JP7603059B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024214402A JP7781246B2 (ja) 2020-03-27 2024-12-09 撮像装置および電子機器
JP2025202950A JP2026026156A (ja) 2020-03-27 2025-11-25 撮像装置および電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020057810 2020-03-27
JP2020057810 2020-03-27
PCT/IB2021/052110 WO2021191719A1 (ja) 2020-03-27 2021-03-15 撮像装置および電子機器

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JP2024214402A Division JP7781246B2 (ja) 2020-03-27 2024-12-09 撮像装置および電子機器

Publications (3)

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JPWO2021191719A1 JPWO2021191719A1 (https=) 2021-09-30
JPWO2021191719A5 JPWO2021191719A5 (https=) 2024-03-05
JP7603059B2 true JP7603059B2 (ja) 2024-12-19

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JP2022509744A Active JP7603059B2 (ja) 2020-03-27 2021-03-15 撮像装置および電子機器
JP2024214402A Active JP7781246B2 (ja) 2020-03-27 2024-12-09 撮像装置および電子機器
JP2025202950A Pending JP2026026156A (ja) 2020-03-27 2025-11-25 撮像装置および電子機器

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JP2024214402A Active JP7781246B2 (ja) 2020-03-27 2024-12-09 撮像装置および電子機器
JP2025202950A Pending JP2026026156A (ja) 2020-03-27 2025-11-25 撮像装置および電子機器

Country Status (5)

Country Link
US (3) US12041366B2 (https=)
JP (3) JP7603059B2 (https=)
KR (1) KR20220160007A (https=)
CN (1) CN115336254A (https=)
WO (1) WO2021191719A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024011770A (ja) * 2022-07-15 2024-01-25 日本放送協会 撮像素子、撮像装置および撮像素子の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12147888B2 (en) * 2020-11-12 2024-11-19 Samsung Electronics Co., Ltd. Neural computer including image sensor capable of controlling photocurrent

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016123087A (ja) 2014-12-10 2016-07-07 株式会社半導体エネルギー研究所 半導体装置および電子機器
WO2018215882A1 (ja) 2017-05-26 2018-11-29 株式会社半導体エネルギー研究所 撮像装置および電子機器
WO2019012369A1 (ja) 2017-07-14 2019-01-17 株式会社半導体エネルギー研究所 撮像装置、及び電子機器

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JP3642591B2 (ja) * 1994-11-29 2005-04-27 株式会社日立メディコ 画像処理装置
US7151844B2 (en) * 2001-12-06 2006-12-19 General Motors Corporation Image sensor method and apparatus having hardware implemented edge detection processing
US7215370B2 (en) * 2003-07-23 2007-05-08 Alphaplus Semiconductor Inc. Pseudo-BJT based retinal focal-plane sensing system
JP2008199414A (ja) 2007-02-14 2008-08-28 Matsushita Electric Ind Co Ltd 光電変換装置、イメージセンサ及びイメージングシステム
EP1971129A1 (en) 2007-03-16 2008-09-17 STMicroelectronics (Research & Development) Limited Improvements in or relating to image sensors
KR101645680B1 (ko) 2009-11-06 2016-08-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2012175259A (ja) 2011-02-18 2012-09-10 Olympus Corp 固体撮像装置
US9762834B2 (en) * 2014-09-30 2017-09-12 Qualcomm Incorporated Configurable hardware for computing computer vision features
WO2016179533A1 (en) * 2015-05-06 2016-11-10 Indiana University Research And Technology Corporation Sensor signal processing using an analog neural network
JP2017063420A (ja) * 2015-09-25 2017-03-30 株式会社半導体エネルギー研究所 半導体装置
KR102631381B1 (ko) * 2016-11-07 2024-01-31 삼성전자주식회사 컨볼루션 신경망 처리 방법 및 장치
US11039099B2 (en) 2016-11-24 2021-06-15 Sony Semiconductor Solutions Corporation Solid-state imaging element, solid-state imaging apparatus, and method for controlling solid-state imaging element
JP6975606B2 (ja) 2017-10-11 2021-12-01 浜松ホトニクス株式会社 固体撮像装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016123087A (ja) 2014-12-10 2016-07-07 株式会社半導体エネルギー研究所 半導体装置および電子機器
WO2018215882A1 (ja) 2017-05-26 2018-11-29 株式会社半導体エネルギー研究所 撮像装置および電子機器
WO2019012369A1 (ja) 2017-07-14 2019-01-17 株式会社半導体エネルギー研究所 撮像装置、及び電子機器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024011770A (ja) * 2022-07-15 2024-01-25 日本放送協会 撮像素子、撮像装置および撮像素子の製造方法

Also Published As

Publication number Publication date
US12238435B2 (en) 2025-02-25
JP2026026156A (ja) 2026-02-16
JPWO2021191719A1 (https=) 2021-09-30
JP2025026614A (ja) 2025-02-21
US20250168527A1 (en) 2025-05-22
US12041366B2 (en) 2024-07-16
JP7781246B2 (ja) 2025-12-05
KR20220160007A (ko) 2022-12-05
US20230109524A1 (en) 2023-04-06
US20240305909A1 (en) 2024-09-12
CN115336254A (zh) 2022-11-11
WO2021191719A1 (ja) 2021-09-30

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