JP7598240B2 - 基板乾燥方法および基板乾燥装置 - Google Patents

基板乾燥方法および基板乾燥装置 Download PDF

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Publication number
JP7598240B2
JP7598240B2 JP2020217062A JP2020217062A JP7598240B2 JP 7598240 B2 JP7598240 B2 JP 7598240B2 JP 2020217062 A JP2020217062 A JP 2020217062A JP 2020217062 A JP2020217062 A JP 2020217062A JP 7598240 B2 JP7598240 B2 JP 7598240B2
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Japan
Prior art keywords
processing
substrate
pressure
supply line
valve
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Active
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JP2020217062A
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English (en)
Japanese (ja)
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JP2022102372A (ja
Inventor
源太郎 五師
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2020217062A priority Critical patent/JP7598240B2/ja
Priority to KR1020210177312A priority patent/KR20220092790A/ko
Priority to TW110146494A priority patent/TWI916466B/zh
Priority to US17/644,406 priority patent/US12374565B2/en
Priority to CN202111543383.3A priority patent/CN114695181A/zh
Publication of JP2022102372A publication Critical patent/JP2022102372A/ja
Priority to JP2024207261A priority patent/JP7782007B2/ja
Application granted granted Critical
Publication of JP7598240B2 publication Critical patent/JP7598240B2/ja
Priority to US19/217,198 priority patent/US20250285881A1/en
Priority to JP2025192601A priority patent/JP2026012494A/ja
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00—Drying solid materials or objects by processes not involving the application of heat
    • F26B5/005—Drying solid materials or objects by processes not involving the application of heat by dipping them into or mixing them with a chemical liquid, e.g. organic; chemical, e.g. organic, dewatering aids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/80—Cleaning only by supercritical fluids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2020217062A 2020-12-25 2020-12-25 基板乾燥方法および基板乾燥装置 Active JP7598240B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2020217062A JP7598240B2 (ja) 2020-12-25 2020-12-25 基板乾燥方法および基板乾燥装置
KR1020210177312A KR20220092790A (ko) 2020-12-25 2021-12-13 기판 건조 방법 및 기판 건조 장치
TW110146494A TWI916466B (zh) 2020-12-25 2021-12-13 基板乾燥方法及基板乾燥裝置
US17/644,406 US12374565B2 (en) 2020-12-25 2021-12-15 Substrate drying method and substrate drying apparatus
CN202111543383.3A CN114695181A (zh) 2020-12-25 2021-12-16 基板处理方法和基板处理装置
JP2024207261A JP7782007B2 (ja) 2020-12-25 2024-11-28 基板処理方法および基板処理装置
US19/217,198 US20250285881A1 (en) 2020-12-25 2025-05-23 Substrate drying method and substrate drying apparatus
JP2025192601A JP2026012494A (ja) 2020-12-25 2025-11-12 基板処理方法および基板処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020217062A JP7598240B2 (ja) 2020-12-25 2020-12-25 基板乾燥方法および基板乾燥装置

Related Child Applications (1)

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JP2024207261A Division JP7782007B2 (ja) 2020-12-25 2024-11-28 基板処理方法および基板処理装置

Publications (2)

Publication Number Publication Date
JP2022102372A JP2022102372A (ja) 2022-07-07
JP7598240B2 true JP7598240B2 (ja) 2024-12-11

Family

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Family Applications (3)

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JP2020217062A Active JP7598240B2 (ja) 2020-12-25 2020-12-25 基板乾燥方法および基板乾燥装置
JP2024207261A Active JP7782007B2 (ja) 2020-12-25 2024-11-28 基板処理方法および基板処理装置
JP2025192601A Pending JP2026012494A (ja) 2020-12-25 2025-11-12 基板処理方法および基板処理装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2024207261A Active JP7782007B2 (ja) 2020-12-25 2024-11-28 基板処理方法および基板処理装置
JP2025192601A Pending JP2026012494A (ja) 2020-12-25 2025-11-12 基板処理方法および基板処理装置

Country Status (4)

Country Link
US (2) US12374565B2 (https=)
JP (3) JP7598240B2 (https=)
KR (1) KR20220092790A (https=)
CN (1) CN114695181A (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117716476A (zh) * 2021-08-05 2024-03-15 东京毅力科创株式会社 基板处理方法和基板处理装置
KR102643365B1 (ko) * 2021-09-03 2024-03-07 세메스 주식회사 기판 처리 장치 및 방법
KR102761703B1 (ko) * 2022-10-27 2025-02-03 세메스 주식회사 기판 처리 장치
KR102780098B1 (ko) * 2022-12-27 2025-03-11 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102779275B1 (ko) * 2022-12-29 2025-03-11 세메스 주식회사 유체 공급 장치 및 이를 포함하는 기판 처리 장치
KR102789694B1 (ko) * 2023-06-30 2025-04-03 주식회사 테스 기판처리방법
US20260107726A1 (en) * 2024-10-11 2026-04-16 Tokyo Electron Limited Method for processing substrate

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007175559A (ja) 2005-12-27 2007-07-12 Dainippon Screen Mfg Co Ltd 高圧処理装置および高圧処理方法
JP2013251550A (ja) 2012-05-31 2013-12-12 Semes Co Ltd 基板乾燥装置及び基板乾燥方法
US20170345687A1 (en) 2016-05-26 2017-11-30 Semes Co., Ltd. Unit for supplying fluid, apparatus and method for treating substrate with the unit
US20180012755A1 (en) 2016-07-11 2018-01-11 Semes Co., Ltd. Apparatus and method for treating substrate
JP2018074103A (ja) 2016-11-04 2018-05-10 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記録媒体
JP2018082099A (ja) 2016-11-17 2018-05-24 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP2018152477A (ja) 2017-03-14 2018-09-27 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP2019033246A (ja) 2017-08-09 2019-02-28 東京エレクトロン株式会社 基板処理方法、記憶媒体及び基板処理システム
JP2020126974A (ja) 2019-02-06 2020-08-20 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2022051531A (ja) 2020-09-18 2022-03-31 セメス カンパニー，リミテッド 基板処理装置及び方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234862A (ja) 2006-03-01 2007-09-13 Dainippon Screen Mfg Co Ltd 高圧処理装置および高圧処理方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007175559A (ja) 2005-12-27 2007-07-12 Dainippon Screen Mfg Co Ltd 高圧処理装置および高圧処理方法
JP2013251550A (ja) 2012-05-31 2013-12-12 Semes Co Ltd 基板乾燥装置及び基板乾燥方法
US20170345687A1 (en) 2016-05-26 2017-11-30 Semes Co., Ltd. Unit for supplying fluid, apparatus and method for treating substrate with the unit
US20180012755A1 (en) 2016-07-11 2018-01-11 Semes Co., Ltd. Apparatus and method for treating substrate
JP2018074103A (ja) 2016-11-04 2018-05-10 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記録媒体
JP2018082099A (ja) 2016-11-17 2018-05-24 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP2018152477A (ja) 2017-03-14 2018-09-27 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP2019033246A (ja) 2017-08-09 2019-02-28 東京エレクトロン株式会社 基板処理方法、記憶媒体及び基板処理システム
JP2020126974A (ja) 2019-02-06 2020-08-20 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2022051531A (ja) 2020-09-18 2022-03-31 セメス カンパニー，リミテッド 基板処理装置及び方法

Also Published As

Publication number Publication date
US20250285881A1 (en) 2025-09-11
JP2026012494A (ja) 2026-01-23
JP2022102372A (ja) 2022-07-07
KR20220092790A (ko) 2022-07-04
CN114695181A (zh) 2022-07-01
JP7782007B2 (ja) 2025-12-08
JP2025023084A (ja) 2025-02-14
TW202242954A (zh) 2022-11-01
US20220208566A1 (en) 2022-06-30
US12374565B2 (en) 2025-07-29

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