CN114695181A - 基板处理方法和基板处理装置 - Google Patents

基板处理方法和基板处理装置 Download PDF

Info

Publication number
CN114695181A
CN114695181A CN202111543383.3A CN202111543383A CN114695181A CN 114695181 A CN114695181 A CN 114695181A CN 202111543383 A CN202111543383 A CN 202111543383A CN 114695181 A CN114695181 A CN 114695181A
Authority
CN
China
Prior art keywords
pressure
processing
substrate
fluid
processing container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202111543383.3A
Other languages
English (en)
Chinese (zh)
Inventor
五师源太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN114695181A publication Critical patent/CN114695181A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00—Drying solid materials or objects by processes not involving the application of heat
    • F26B5/005—Drying solid materials or objects by processes not involving the application of heat by dipping them into or mixing them with a chemical liquid, e.g. organic; chemical, e.g. organic, dewatering aids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/80—Cleaning only by supercritical fluids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN202111543383.3A 2020-12-25 2021-12-16 基板处理方法和基板处理装置 Pending CN114695181A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020217062A JP7598240B2 (ja) 2020-12-25 2020-12-25 基板乾燥方法および基板乾燥装置
JP2020-217062 2020-12-25

Publications (1)

Publication Number Publication Date
CN114695181A true CN114695181A (zh) 2022-07-01

Family

ID=82119126

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111543383.3A Pending CN114695181A (zh) 2020-12-25 2021-12-16 基板处理方法和基板处理装置

Country Status (4)

Country Link
US (2) US12374565B2 (https=)
JP (3) JP7598240B2 (https=)
KR (1) KR20220092790A (https=)
CN (1) CN114695181A (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117716476A (zh) * 2021-08-05 2024-03-15 东京毅力科创株式会社 基板处理方法和基板处理装置
KR102643365B1 (ko) * 2021-09-03 2024-03-07 세메스 주식회사 기판 처리 장치 및 방법
KR102761703B1 (ko) * 2022-10-27 2025-02-03 세메스 주식회사 기판 처리 장치
KR102780098B1 (ko) * 2022-12-27 2025-03-11 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102779275B1 (ko) * 2022-12-29 2025-03-11 세메스 주식회사 유체 공급 장치 및 이를 포함하는 기판 처리 장치
KR102789694B1 (ko) * 2023-06-30 2025-04-03 주식회사 테스 기판처리방법
US20260107726A1 (en) * 2024-10-11 2026-04-16 Tokyo Electron Limited Method for processing substrate

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007175559A (ja) 2005-12-27 2007-07-12 Dainippon Screen Mfg Co Ltd 高圧処理装置および高圧処理方法
JP2007234862A (ja) 2006-03-01 2007-09-13 Dainippon Screen Mfg Co Ltd 高圧処理装置および高圧処理方法
US9587880B2 (en) 2012-05-31 2017-03-07 Semes Co., Ltd. Apparatus and method for drying substrate
KR20170133694A (ko) 2016-05-26 2017-12-06 세메스 주식회사 유체 공급 유닛, 이를 가지는 기판 처리 장치 및 방법
KR20180006716A (ko) 2016-07-11 2018-01-19 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP6755776B2 (ja) 2016-11-04 2020-09-16 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記録媒体
JP6740098B2 (ja) 2016-11-17 2020-08-12 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP6840001B2 (ja) 2017-03-14 2021-03-10 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP7109989B2 (ja) 2017-08-09 2022-08-01 東京エレクトロン株式会社 基板処理方法、記憶媒体及び基板処理システム
JP7197396B2 (ja) 2019-02-06 2022-12-27 東京エレクトロン株式会社 基板処理装置及び基板処理方法
KR20220037632A (ko) 2020-09-18 2022-03-25 세메스 주식회사 기판 처리 장치 및 방법

Also Published As

Publication number Publication date
US20250285881A1 (en) 2025-09-11
JP2026012494A (ja) 2026-01-23
JP2022102372A (ja) 2022-07-07
KR20220092790A (ko) 2022-07-04
JP7782007B2 (ja) 2025-12-08
JP2025023084A (ja) 2025-02-14
TW202242954A (zh) 2022-11-01
US20220208566A1 (en) 2022-06-30
US12374565B2 (en) 2025-07-29
JP7598240B2 (ja) 2024-12-11

Similar Documents

Publication Publication Date Title
CN114695181A (zh) 基板处理方法和基板处理装置
KR101824809B1 (ko) 기판 처리 장치, 기판 처리 방법 및 기억 매체
CN108074840B (zh) 基板处理装置、基板处理方法以及存储介质
CN108022861B (zh) 基板处理装置、基板处理方法以及存储介质
JP7775000B2 (ja) 基板処理装置および基板処理方法
JP7797608B2 (ja) 基板処理装置および基板処理方法
KR102581314B1 (ko) 기판 처리 방법, 기억 매체 및 기판 처리 시스템
CN108074844A (zh) 基板处理装置、基板处理方法以及存储介质
CN107895686A (zh) 基板处理方法、基板处理装置以及记录介质
KR102254186B1 (ko) 기판 건조 장치
JP2023038790A5 (https=)
TWI834176B (zh) 基板處理方法及基板處理裝置
KR102254187B1 (ko) 기판 건조 장치
CN115692172A (zh) 基板处理方法和基板处理装置
TWI916466B (zh) 基板乾燥方法及基板乾燥裝置
US20250149353A1 (en) Substrate processing apparatus and substrate processing method
TWI913332B (zh) 基板處理裝置及基板處理方法
CN117747487A (zh) 基片处理装置和基片处理方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination