JP7590696B2 - レジスト下層膜形成組成物 - Google Patents

レジスト下層膜形成組成物 Download PDF

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Publication number
JP7590696B2
JP7590696B2 JP2021504993A JP2021504993A JP7590696B2 JP 7590696 B2 JP7590696 B2 JP 7590696B2 JP 2021504993 A JP2021504993 A JP 2021504993A JP 2021504993 A JP2021504993 A JP 2021504993A JP 7590696 B2 JP7590696 B2 JP 7590696B2
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Prior art keywords
resist underlayer
underlayer film
forming composition
formula
film forming
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Japanese (ja)
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JPWO2020184380A1 (https=
Inventor
裕斗 緒方
光 ▲徳▼永
裕和 西巻
誠 中島
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Nissan Chemical Corp
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Nissan Chemical Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
    • C08G59/24—Di-epoxy compounds carbocyclic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
    • C08G59/24—Di-epoxy compounds carbocyclic
    • C08G59/245—Di-epoxy compounds carbocyclic aromatic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L71/00—Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2650/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G2650/28—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type
    • C08G2650/56—Polyhydroxyethers, e.g. phenoxy resins

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Epoxy Resins (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2021504993A 2019-03-12 2020-03-05 レジスト下層膜形成組成物 Active JP7590696B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019044874 2019-03-12
JP2019044874 2019-03-12
PCT/JP2020/009438 WO2020184380A1 (ja) 2019-03-12 2020-03-05 レジスト下層膜形成組成物

Publications (2)

Publication Number Publication Date
JPWO2020184380A1 JPWO2020184380A1 (https=) 2020-09-17
JP7590696B2 true JP7590696B2 (ja) 2024-11-27

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JP2021504993A Active JP7590696B2 (ja) 2019-03-12 2020-03-05 レジスト下層膜形成組成物

Country Status (6)

Country Link
US (1) US12044969B2 (https=)
JP (1) JP7590696B2 (https=)
KR (1) KR102779885B1 (https=)
CN (1) CN113544586B (https=)
TW (1) TWI834839B (https=)
WO (1) WO2020184380A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008088278A (ja) 2006-09-30 2008-04-17 Sumitomo Bakelite Co Ltd 液状樹脂組成物およびそれを用いた半導体装置
WO2018016615A1 (ja) 2016-07-21 2018-01-25 三菱瓦斯化学株式会社 化合物、樹脂、組成物並びにレジストパターン形成方法及び回路パターン形成方法
JP2018063382A (ja) 2016-10-14 2018-04-19 信越化学工業株式会社 積層体及びパターン形成方法
WO2018190380A1 (ja) 2017-04-14 2018-10-18 日産化学株式会社 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物
WO2018203540A1 (ja) 2017-05-02 2018-11-08 日産化学株式会社 レジスト下層膜形成組成物
WO2019031556A1 (ja) 2017-08-09 2019-02-14 日産化学株式会社 架橋性化合物を含有する光硬化性段差基板被覆組成物

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002083415A1 (en) 2001-04-17 2002-10-24 Brewer Science, Inc. Anti-reflective coating composition with improved spin bowl compatibility
US7537810B2 (en) * 2003-03-24 2009-05-26 Dai Nippon Printing Co., Ltd. Curable resin composition, photosensitive pattern-forming curable resin composition, color filter, substrate for liquid crystalline panel, and liquid crystalline panel
CN102621814A (zh) 2005-04-19 2012-08-01 日产化学工业株式会社 用于形成光交联固化的抗蚀剂下层膜的抗蚀剂下层膜形成组合物
KR101436336B1 (ko) 2005-12-06 2014-09-01 닛산 가가쿠 고교 가부시키 가이샤 광가교 경화의 레지스트 하층막을 형성하기 위한 규소 함유레지스트 하층막 형성 조성물
WO2008047638A1 (en) 2006-10-12 2008-04-24 Nissan Chemical Industries, Ltd. Process for semiconductor device production using under-resist film cured by photocrosslinking
JP5158381B2 (ja) 2007-07-11 2013-03-06 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
JP6194862B2 (ja) * 2014-07-29 2017-09-13 信越化学工業株式会社 シリコーン骨格含有高分子化合物、ネガ型レジスト材料、光硬化性ドライフィルム、パターン形成方法及び電気・電子部品保護用皮膜
JP7054459B2 (ja) * 2017-05-15 2022-04-14 三菱瓦斯化学株式会社 リソグラフィー用膜形成材料、リソグラフィー用膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008088278A (ja) 2006-09-30 2008-04-17 Sumitomo Bakelite Co Ltd 液状樹脂組成物およびそれを用いた半導体装置
WO2018016615A1 (ja) 2016-07-21 2018-01-25 三菱瓦斯化学株式会社 化合物、樹脂、組成物並びにレジストパターン形成方法及び回路パターン形成方法
JP2018063382A (ja) 2016-10-14 2018-04-19 信越化学工業株式会社 積層体及びパターン形成方法
WO2018190380A1 (ja) 2017-04-14 2018-10-18 日産化学株式会社 炭素原子間の不飽和結合によるプラズマ硬化性化合物を含む段差基板被覆膜形成組成物
WO2018203540A1 (ja) 2017-05-02 2018-11-08 日産化学株式会社 レジスト下層膜形成組成物
WO2019031556A1 (ja) 2017-08-09 2019-02-14 日産化学株式会社 架橋性化合物を含有する光硬化性段差基板被覆組成物

Also Published As

Publication number Publication date
JPWO2020184380A1 (https=) 2020-09-17
WO2020184380A1 (ja) 2020-09-17
US12044969B2 (en) 2024-07-23
KR102779885B1 (ko) 2025-03-12
KR20210138665A (ko) 2021-11-19
US20220146939A1 (en) 2022-05-12
TW202101116A (zh) 2021-01-01
CN113544586B (zh) 2025-12-19
CN113544586A (zh) 2021-10-22
TWI834839B (zh) 2024-03-11

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