JP7586082B2 - 炭化珪素半導体装置 - Google Patents

炭化珪素半導体装置 Download PDF

Info

Publication number
JP7586082B2
JP7586082B2 JP2021537274A JP2021537274A JP7586082B2 JP 7586082 B2 JP7586082 B2 JP 7586082B2 JP 2021537274 A JP2021537274 A JP 2021537274A JP 2021537274 A JP2021537274 A JP 2021537274A JP 7586082 B2 JP7586082 B2 JP 7586082B2
Authority
JP
Japan
Prior art keywords
sidewall
semiconductor layer
region
insulating film
silicon carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021537274A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021024916A1 (https=
Inventor
光亮 内田
透 日吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of JPWO2021024916A1 publication Critical patent/JPWO2021024916A1/ja
Application granted granted Critical
Publication of JP7586082B2 publication Critical patent/JP7586082B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2021537274A 2019-08-06 2020-07-30 炭化珪素半導体装置 Active JP7586082B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019144751 2019-08-06
JP2019144751 2019-08-06
PCT/JP2020/029300 WO2021024916A1 (ja) 2019-08-06 2020-07-30 炭化珪素半導体装置

Publications (2)

Publication Number Publication Date
JPWO2021024916A1 JPWO2021024916A1 (https=) 2021-02-11
JP7586082B2 true JP7586082B2 (ja) 2024-11-19

Family

ID=74504109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021537274A Active JP7586082B2 (ja) 2019-08-06 2020-07-30 炭化珪素半導体装置

Country Status (2)

Country Link
JP (1) JP7586082B2 (https=)
WO (1) WO2021024916A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012127821A1 (ja) 2011-03-23 2012-09-27 パナソニック株式会社 半導体装置およびその製造方法
WO2014148130A1 (ja) 2013-03-19 2014-09-25 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2016164906A (ja) 2015-03-06 2016-09-08 豊田合成株式会社 半導体装置およびその製造方法ならびに電力変換装置
US20160351668A1 (en) 2015-05-28 2016-12-01 Infineon Technologies Ag Stripe-Shaped Electrode Structure Including a Main Portion with a Field Electrode and an End Portion Terminating the Electrode Structure
JP2016213421A (ja) 2015-05-13 2016-12-15 株式会社豊田中央研究所 半導体装置
JP2018093135A (ja) 2016-12-07 2018-06-14 株式会社東芝 半導体装置及びその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012127821A1 (ja) 2011-03-23 2012-09-27 パナソニック株式会社 半導体装置およびその製造方法
WO2014148130A1 (ja) 2013-03-19 2014-09-25 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2016164906A (ja) 2015-03-06 2016-09-08 豊田合成株式会社 半導体装置およびその製造方法ならびに電力変換装置
JP2016213421A (ja) 2015-05-13 2016-12-15 株式会社豊田中央研究所 半導体装置
US20160351668A1 (en) 2015-05-28 2016-12-01 Infineon Technologies Ag Stripe-Shaped Electrode Structure Including a Main Portion with a Field Electrode and an End Portion Terminating the Electrode Structure
JP2018093135A (ja) 2016-12-07 2018-06-14 株式会社東芝 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPWO2021024916A1 (https=) 2021-02-11
WO2021024916A1 (ja) 2021-02-11

Similar Documents

Publication Publication Date Title
CN102971853B (zh) 半导体器件及其制造方法
US9276106B2 (en) Silicon carbide semiconductor device and method for manufacturing same
US8999854B2 (en) Method for manufacturing silicon carbide semiconductor device
JP6135364B2 (ja) 炭化珪素半導体装置およびその製造方法
CN103782391B (zh) 碳化硅半导体器件及其制造方法
JP7156314B2 (ja) 炭化珪素半導体装置
US9984879B2 (en) Silicon carbide semiconductor device and method for manufacturing same
CN103890952B (zh) 碳化硅半导体器件及其制造方法
US9627487B2 (en) Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
JP6075120B2 (ja) 炭化珪素半導体装置
US9543412B2 (en) Method for manufacturing silicon carbide semiconductor device
JP7586082B2 (ja) 炭化珪素半導体装置
JP2024125439A (ja) 半導体装置及び半導体装置の製造方法
JP7156313B2 (ja) 炭化珪素半導体装置
JP7722202B2 (ja) 炭化珪素半導体装置
US9679986B2 (en) Silicon carbide semiconductor device
US9793365B2 (en) Method for manufacturing silicon carbide semiconductor device having trench
WO2023026803A1 (ja) 炭化珪素半導体装置及び炭化珪素半導体装置の製造方法
WO2022137649A1 (ja) 炭化珪素半導体装置
WO2022209089A1 (ja) 炭化珪素半導体装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230421

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240618

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240806

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20241008

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20241021

R150 Certificate of patent or registration of utility model

Ref document number: 7586082

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113