JP7567909B2 - 増幅回路、差動増幅回路、受信回路及び半導体集積回路 - Google Patents

増幅回路、差動増幅回路、受信回路及び半導体集積回路 Download PDF

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Publication number
JP7567909B2
JP7567909B2 JP2022529974A JP2022529974A JP7567909B2 JP 7567909 B2 JP7567909 B2 JP 7567909B2 JP 2022529974 A JP2022529974 A JP 2022529974A JP 2022529974 A JP2022529974 A JP 2022529974A JP 7567909 B2 JP7567909 B2 JP 7567909B2
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Prior art keywords
transistor
circuit
input
gate electrode
circuits
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Japanese (ja)
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JPWO2021250870A1 (https=
JPWO2021250870A5 (https=
Inventor
遼一郎 中村
真大 工藤
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Socionext Inc
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Socionext Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45273—Mirror types
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
    • H03F1/086—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers with FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/474—A current mirror being used as sensor

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
JP2022529974A 2020-06-11 2020-06-11 増幅回路、差動増幅回路、受信回路及び半導体集積回路 Active JP7567909B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/023110 WO2021250870A1 (ja) 2020-06-11 2020-06-11 増幅回路、差動増幅回路、受信回路及び半導体集積回路

Publications (3)

Publication Number Publication Date
JPWO2021250870A1 JPWO2021250870A1 (https=) 2021-12-16
JPWO2021250870A5 JPWO2021250870A5 (https=) 2023-03-01
JP7567909B2 true JP7567909B2 (ja) 2024-10-16

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JP2022529974A Active JP7567909B2 (ja) 2020-06-11 2020-06-11 増幅回路、差動増幅回路、受信回路及び半導体集積回路

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Country Link
US (1) US20230095506A1 (https=)
JP (1) JP7567909B2 (https=)
CN (1) CN115699568B (https=)
WO (1) WO2021250870A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6545540B1 (en) 2000-10-11 2003-04-08 Intersil Americas Inc. Current mirror-embedded low-pass filter for subscriber line interface circuit applications
JP2005526412A (ja) 2001-07-30 2005-09-02 フリースケール セミコンダクター インコーポレイテッド 能動バイアス回路
US20080024228A1 (en) 2006-07-28 2008-01-31 Chao-Cheng Lee Hybrid output stage apparatus and related method thereof
JP2009165100A (ja) 2007-12-11 2009-07-23 Hitachi Metals Ltd 高周波増幅器及び高周波モジュール並びにそれらを用いた移動体無線機
WO2019155582A1 (ja) 2018-02-08 2019-08-15 株式会社ソシオネクスト 増幅回路、加算回路、受信回路及び集積回路
WO2021124450A1 (ja) 2019-12-17 2021-06-24 株式会社ソシオネクスト 差動増幅回路、受信回路及び半導体集積回路

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2688905A1 (fr) * 1992-03-18 1993-09-24 Philips Composants Circuit miroir de courant a commutation acceleree.
JPH0974340A (ja) * 1995-09-04 1997-03-18 Toshiba Corp コンパレータ回路
EP1806639A1 (en) * 2006-01-10 2007-07-11 AMI Semiconductor Belgium BVBA A DC current regulator insensitive to conducted EMI
JP5120248B2 (ja) * 2008-12-26 2013-01-16 富士通株式会社 増幅回路
KR101099699B1 (ko) * 2010-04-02 2011-12-28 부산대학교 산학협력단 고선형성, 저전력에 적합한 가변이득 증폭기 및 이를 이용한 ｒｆ송신기

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6545540B1 (en) 2000-10-11 2003-04-08 Intersil Americas Inc. Current mirror-embedded low-pass filter for subscriber line interface circuit applications
JP2005526412A (ja) 2001-07-30 2005-09-02 フリースケール セミコンダクター インコーポレイテッド 能動バイアス回路
US20080024228A1 (en) 2006-07-28 2008-01-31 Chao-Cheng Lee Hybrid output stage apparatus and related method thereof
JP2009165100A (ja) 2007-12-11 2009-07-23 Hitachi Metals Ltd 高周波増幅器及び高周波モジュール並びにそれらを用いた移動体無線機
WO2019155582A1 (ja) 2018-02-08 2019-08-15 株式会社ソシオネクスト 増幅回路、加算回路、受信回路及び集積回路
WO2021124450A1 (ja) 2019-12-17 2021-06-24 株式会社ソシオネクスト 差動増幅回路、受信回路及び半導体集積回路

Also Published As

Publication number Publication date
CN115699568B (zh) 2025-11-18
JPWO2021250870A1 (https=) 2021-12-16
WO2021250870A1 (ja) 2021-12-16
US20230095506A1 (en) 2023-03-30
CN115699568A (zh) 2023-02-03

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