CN115699568B - 放大电路、差动放大电路、接收电路以及半导体集成电路 - Google Patents

放大电路、差动放大电路、接收电路以及半导体集成电路

Info

Publication number
CN115699568B
CN115699568B CN202080101881.XA CN202080101881A CN115699568B CN 115699568 B CN115699568 B CN 115699568B CN 202080101881 A CN202080101881 A CN 202080101881A CN 115699568 B CN115699568 B CN 115699568B
Authority
CN
China
Prior art keywords
transistor
circuit
input
gate electrode
node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080101881.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN115699568A (zh
Inventor
中村辽一郎
工藤真大
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Socionext Inc
Original Assignee
Socionext Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Socionext Inc filed Critical Socionext Inc
Publication of CN115699568A publication Critical patent/CN115699568A/zh
Application granted granted Critical
Publication of CN115699568B publication Critical patent/CN115699568B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45273—Mirror types
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
    • H03F1/086—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers with FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/474—A current mirror being used as sensor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
CN202080101881.XA 2020-06-11 2020-06-11 放大电路、差动放大电路、接收电路以及半导体集成电路 Active CN115699568B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/023110 WO2021250870A1 (ja) 2020-06-11 2020-06-11 増幅回路、差動増幅回路、受信回路及び半導体集積回路

Publications (2)

Publication Number Publication Date
CN115699568A CN115699568A (zh) 2023-02-03
CN115699568B true CN115699568B (zh) 2025-11-18

Family

ID=78847077

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080101881.XA Active CN115699568B (zh) 2020-06-11 2020-06-11 放大电路、差动放大电路、接收电路以及半导体集成电路

Country Status (4)

Country Link
US (1) US20230095506A1 (https=)
JP (1) JP7567909B2 (https=)
CN (1) CN115699568B (https=)
WO (1) WO2021250870A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110111132A (ko) * 2010-04-02 2011-10-10 부산대학교 산학협력단 고선형성, 저전력에 적합한 가변이득 증폭기 및 이를 이용한 ｒｆ송신기

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2688905A1 (fr) * 1992-03-18 1993-09-24 Philips Composants Circuit miroir de courant a commutation acceleree.
JPH0974340A (ja) * 1995-09-04 1997-03-18 Toshiba Corp コンパレータ回路
US6545540B1 (en) * 2000-10-11 2003-04-08 Intersil Americas Inc. Current mirror-embedded low-pass filter for subscriber line interface circuit applications
US6492874B1 (en) * 2001-07-30 2002-12-10 Motorola, Inc. Active bias circuit
EP1806639A1 (en) * 2006-01-10 2007-07-11 AMI Semiconductor Belgium BVBA A DC current regulator insensitive to conducted EMI
TWI323556B (en) * 2006-07-28 2010-04-11 Realtek Semiconductor Corp Hybrid output stage circuit and related method thereof
JP2009165100A (ja) * 2007-12-11 2009-07-23 Hitachi Metals Ltd 高周波増幅器及び高周波モジュール並びにそれらを用いた移動体無線機
JP5120248B2 (ja) * 2008-12-26 2013-01-16 富士通株式会社 増幅回路
JP7181470B2 (ja) * 2018-02-08 2022-12-01 株式会社ソシオネクスト 加算回路、受信回路及び集積回路
CN114788174B (zh) * 2019-12-17 2025-04-22 株式会社索思未来 差动放大电路、接收电路以及半导体集成电路

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110111132A (ko) * 2010-04-02 2011-10-10 부산대학교 산학협력단 고선형성, 저전력에 적합한 가변이득 증폭기 및 이를 이용한 ｒｆ송신기

Also Published As

Publication number Publication date
JPWO2021250870A1 (https=) 2021-12-16
WO2021250870A1 (ja) 2021-12-16
JP7567909B2 (ja) 2024-10-16
US20230095506A1 (en) 2023-03-30
CN115699568A (zh) 2023-02-03

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