JP7562306B2 - 光電変換装置、光電変換システム、および移動体 - Google Patents

光電変換装置、光電変換システム、および移動体 Download PDF

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Publication number
JP7562306B2
JP7562306B2 JP2020107919A JP2020107919A JP7562306B2 JP 7562306 B2 JP7562306 B2 JP 7562306B2 JP 2020107919 A JP2020107919 A JP 2020107919A JP 2020107919 A JP2020107919 A JP 2020107919A JP 7562306 B2 JP7562306 B2 JP 7562306B2
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pixel block
pixel
metal
photoelectric conversion
semiconductor element
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Japanese (ja)
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JP2022003672A (ja
JP2022003672A5 (https=
Inventor
大祐 小林
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2020107919A priority Critical patent/JP7562306B2/ja
Priority to EP21179825.1A priority patent/EP3929987B1/en
Priority to US17/353,457 priority patent/US12080730B2/en
Priority to CN202110691645.4A priority patent/CN113838877B/zh
Publication of JP2022003672A publication Critical patent/JP2022003672A/ja
Publication of JP2022003672A5 publication Critical patent/JP2022003672A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Pressure Sensors (AREA)
JP2020107919A 2020-06-23 2020-06-23 光電変換装置、光電変換システム、および移動体 Active JP7562306B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2020107919A JP7562306B2 (ja) 2020-06-23 2020-06-23 光電変換装置、光電変換システム、および移動体
EP21179825.1A EP3929987B1 (en) 2020-06-23 2021-06-16 Photoelectric conversion apparatus, photoelectric conversion system, and movable body
US17/353,457 US12080730B2 (en) 2020-06-23 2021-06-21 Photoelectric conversion apparatus, photoelectric conversion system, and movable body
CN202110691645.4A CN113838877B (zh) 2020-06-23 2021-06-22 光电转换装置和系统、可移动体控制系统及半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020107919A JP7562306B2 (ja) 2020-06-23 2020-06-23 光電変換装置、光電変換システム、および移動体

Publications (3)

Publication Number Publication Date
JP2022003672A JP2022003672A (ja) 2022-01-11
JP2022003672A5 JP2022003672A5 (https=) 2023-06-26
JP7562306B2 true JP7562306B2 (ja) 2024-10-07

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JP2020107919A Active JP7562306B2 (ja) 2020-06-23 2020-06-23 光電変換装置、光電変換システム、および移動体

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US (1) US12080730B2 (https=)
EP (1) EP3929987B1 (https=)
JP (1) JP7562306B2 (https=)
CN (1) CN113838877B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12604554B2 (en) * 2020-03-31 2026-04-14 Canon Kabushiki Kaisha Photoelectric conversion apparatus, photoelectric conversion system, and moving object
JP7690308B2 (ja) * 2021-03-31 2025-06-10 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
JP7822857B2 (ja) * 2022-03-30 2026-03-03 富士フイルム株式会社 処理装置、撮像装置、処理方法、及び処理プログラム
US12225304B2 (en) * 2022-04-27 2025-02-11 Semiconductor Components Industries, Llc Expanded image sensor pixel array

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012161044A1 (ja) 2011-05-24 2012-11-29 ソニー株式会社 半導体装置
JP2018022924A (ja) 2017-10-25 2018-02-08 キヤノン株式会社 固体撮像装置およびその製造方法
JP2018182038A (ja) 2017-04-12 2018-11-15 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
JP2019067931A (ja) 2017-09-29 2019-04-25 キヤノン株式会社 半導体装置および機器

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Publication number Priority date Publication date Assignee Title
JP4277216B2 (ja) * 2005-01-13 2009-06-10 ソニー株式会社 撮像装置及び撮像結果の処理方法
TWI429066B (zh) * 2005-06-02 2014-03-01 新力股份有限公司 Semiconductor image sensor module and manufacturing method thereof
JP5696513B2 (ja) * 2011-02-08 2015-04-08 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP6012262B2 (ja) * 2012-05-31 2016-10-25 キヤノン株式会社 半導体装置の製造方法
JP2014086596A (ja) * 2012-10-24 2014-05-12 Olympus Corp 半導体装置、撮像装置、半導体基板の検査方法及び半導体装置の製造方法
US9437633B2 (en) * 2014-11-06 2016-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Depth sensing pixel, composite pixel image sensor and method of making the composite pixel image sensor
KR102363433B1 (ko) * 2015-01-15 2022-02-16 삼성전자주식회사 이미지 센서
JP2016171399A (ja) 2015-03-11 2016-09-23 株式会社東芝 固体撮像装置
WO2017009944A1 (ja) * 2015-07-14 2017-01-19 オリンパス株式会社 固体撮像装置
EP3813356B1 (en) * 2017-10-30 2025-02-05 Sony Semiconductor Solutions Corporation Solid-state imaging device
JP6526159B2 (ja) 2017-11-21 2019-06-05 キヤノン株式会社 固体撮像装置およびカメラ
JP7353729B2 (ja) 2018-02-09 2023-10-02 キヤノン株式会社 半導体装置、半導体装置の製造方法
JP7117538B2 (ja) 2018-03-23 2022-08-15 パナソニックＩｐマネジメント株式会社 車両及び自動運転制御装置
KR102587895B1 (ko) * 2018-09-13 2023-10-12 삼성전자주식회사 픽셀 어레이와 메모리 셀 어레이가 병합된 이미지 센서 및 이를 포함하는 전자 장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012161044A1 (ja) 2011-05-24 2012-11-29 ソニー株式会社 半導体装置
JP2018182038A (ja) 2017-04-12 2018-11-15 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
JP2019067931A (ja) 2017-09-29 2019-04-25 キヤノン株式会社 半導体装置および機器
JP2018022924A (ja) 2017-10-25 2018-02-08 キヤノン株式会社 固体撮像装置およびその製造方法

Also Published As

Publication number Publication date
US20210399031A1 (en) 2021-12-23
JP2022003672A (ja) 2022-01-11
EP3929987A2 (en) 2021-12-29
CN113838877A (zh) 2021-12-24
CN113838877B (zh) 2026-01-02
EP3929987A3 (en) 2022-02-23
EP3929987B1 (en) 2024-03-06
US12080730B2 (en) 2024-09-03

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