JP7555829B2 - 平坦化装置、平坦化方法及び物品の製造方法 - Google Patents

平坦化装置、平坦化方法及び物品の製造方法 Download PDF

Info

Publication number
JP7555829B2
JP7555829B2 JP2021001035A JP2021001035A JP7555829B2 JP 7555829 B2 JP7555829 B2 JP 7555829B2 JP 2021001035 A JP2021001035 A JP 2021001035A JP 2021001035 A JP2021001035 A JP 2021001035A JP 7555829 B2 JP7555829 B2 JP 7555829B2
Authority
JP
Japan
Prior art keywords
superstrate
substrate
chuck
peripheral portion
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021001035A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021125680A (ja
JP2021125680A5 (https=
Inventor
ジェイ バーメスバーガー セス
ウストゥルク ウスカン
エリス ジョーンズ クリストファー
イム セヒュン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of JP2021125680A publication Critical patent/JP2021125680A/ja
Publication of JP2021125680A5 publication Critical patent/JP2021125680A5/ja
Application granted granted Critical
Publication of JP7555829B2 publication Critical patent/JP7555829B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0428Apparatus for mechanical treatment or grinding or cutting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/01Manufacture or treatment
    • H10D64/013Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01326Aspects related to lithography, isolation or planarisation of the conductor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/04Planarisation of conductive or resistive materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08Planarisation of organic insulating materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Two-Way Televisions, Distribution Of Moving Picture Or The Like (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Micromachines (AREA)
JP2021001035A 2020-01-31 2021-01-06 平坦化装置、平坦化方法及び物品の製造方法 Active JP7555829B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/779,205 US11562924B2 (en) 2020-01-31 2020-01-31 Planarization apparatus, planarization process, and method of manufacturing an article
US16/779,205 2020-01-31

Publications (3)

Publication Number Publication Date
JP2021125680A JP2021125680A (ja) 2021-08-30
JP2021125680A5 JP2021125680A5 (https=) 2023-09-25
JP7555829B2 true JP7555829B2 (ja) 2024-09-25

Family

ID=77062134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021001035A Active JP7555829B2 (ja) 2020-01-31 2021-01-06 平坦化装置、平坦化方法及び物品の製造方法

Country Status (4)

Country Link
US (2) US11562924B2 (https=)
JP (1) JP7555829B2 (https=)
KR (1) KR102831923B1 (https=)
TW (1) TWI817064B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12065573B2 (en) * 2020-07-31 2024-08-20 Canon Kabushiki Kaisha Photocurable composition
US11908711B2 (en) * 2020-09-30 2024-02-20 Canon Kabushiki Kaisha Planarization process, planarization system and method of manufacturing an article
US12282251B2 (en) 2021-09-24 2025-04-22 Canon Kabushiki Kaisha Method of shaping a surface, shaping system, and method of manufacturing an article
US12195382B2 (en) * 2021-12-01 2025-01-14 Canon Kabushiki Kaisha Superstrate and a method of using the same
US20250269438A1 (en) * 2024-02-27 2025-08-28 Canon Kabushiki Kaisha Chuck assembly, planarization process, apparatus and method of manufacturing an article

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020009994A (ja) 2018-07-12 2020-01-16 キヤノン株式会社 平坦化装置、平坦化方法及び物品の製造方法

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5989103A (en) * 1997-09-19 1999-11-23 Applied Materials, Inc. Magnetic carrier head for chemical mechanical polishing
US6873087B1 (en) * 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
US6964793B2 (en) * 2002-05-16 2005-11-15 Board Of Regents, The University Of Texas System Method for fabricating nanoscale patterns in light curable compositions using an electric field
US20040206621A1 (en) * 2002-06-11 2004-10-21 Hongwen Li Integrated equipment set for forming a low K dielectric interconnect on a substrate
US6908861B2 (en) * 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7019819B2 (en) * 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US6900881B2 (en) * 2002-07-11 2005-05-31 Molecular Imprints, Inc. Step and repeat imprint lithography systems
US20050098534A1 (en) * 2003-11-12 2005-05-12 Molecular Imprints, Inc. Formation of conductive templates employing indium tin oxide
EP1768846B1 (en) * 2004-06-03 2010-08-11 Molecular Imprints, Inc. Fluid dispensing and drop-on-demand dispensing for nano-scale manufacturing
WO2006076609A2 (en) * 2005-01-14 2006-07-20 Cabot Corporation Printable electronic features on non-uniform substrate and processes for making same
US7878791B2 (en) * 2005-11-04 2011-02-01 Asml Netherlands B.V. Imprint lithography
US7622935B2 (en) * 2005-12-02 2009-11-24 Formfactor, Inc. Probe card assembly with a mechanically decoupled wiring substrate
US8850980B2 (en) * 2006-04-03 2014-10-07 Canon Nanotechnologies, Inc. Tessellated patterns in imprint lithography
US8012395B2 (en) * 2006-04-18 2011-09-06 Molecular Imprints, Inc. Template having alignment marks formed of contrast material
US7718545B1 (en) * 2006-10-30 2010-05-18 Hewlett-Packard Development Company, L.P. Fabrication process
JP5182470B2 (ja) 2007-07-17 2013-04-17 大日本印刷株式会社 インプリントモールド
US8187515B2 (en) * 2008-04-01 2012-05-29 Molecular Imprints, Inc. Large area roll-to-roll imprint lithography
WO2009151560A2 (en) * 2008-06-09 2009-12-17 Board Of Regents, The University Of Texas System Adaptive nanotopography sculpting
JP5759195B2 (ja) * 2011-02-07 2015-08-05 キヤノン株式会社 型、インプリント方法及び物品製造方法
US20140028686A1 (en) * 2012-07-27 2014-01-30 Qualcomm Mems Technologies, Inc. Display system with thin film encapsulated inverted imod
JP2014049658A (ja) * 2012-08-31 2014-03-17 Toshiba Corp パターン形成方法及びテンプレート
JP5823937B2 (ja) 2012-09-07 2015-11-25 株式会社東芝 モールド、モールド用ブランク基板及びモールドの製造方法
JP5851442B2 (ja) * 2013-03-25 2016-02-03 株式会社東芝 モールド及びその製造方法
US9718096B2 (en) * 2013-08-19 2017-08-01 Board Of Regents, The University Of Texas System Programmable deposition of thin films of a user-defined profile with nanometer scale accuracy
CN111584354B (zh) * 2014-04-18 2021-09-03 株式会社荏原制作所 蚀刻方法
US10409156B2 (en) * 2015-02-13 2019-09-10 Canon Kabushiki Kaisha Mold, imprint apparatus, and method of manufacturing article
JP2016157785A (ja) * 2015-02-24 2016-09-01 株式会社東芝 テンプレート形成方法、テンプレートおよびテンプレート基材
CN121551242A (zh) * 2015-10-15 2026-02-24 德克萨斯大学系统董事会 用于精密纳米尺度制造的通用过程
JP6597186B2 (ja) 2015-10-30 2019-10-30 大日本印刷株式会社 インプリント用のモールド、モールド製造用の基板およびインプリント方法
EP3458807B1 (en) * 2016-05-20 2023-09-13 Board Of Regents The University Of Texas System Precision alignment of the substrate coordinate system relative to the inkjet coordinate system
US11131922B2 (en) * 2016-06-06 2021-09-28 Canon Kabushiki Kaisha Imprint lithography template, system, and method of imprinting
US11669009B2 (en) * 2016-08-03 2023-06-06 Board Of Regents, The University Of Texas System Roll-to-roll programmable film imprint lithography
US10580659B2 (en) * 2017-09-14 2020-03-03 Canon Kabushiki Kaisha Planarization process and apparatus
US10606171B2 (en) * 2018-02-14 2020-03-31 Canon Kabushiki Kaisha Superstrate and a method of using the same
US11198235B2 (en) * 2018-08-09 2021-12-14 Canon Kabushiki Kaisha Flexible mask modulation for controlling atmosphere between mask and substrate and methods of using the same
JP2020043160A (ja) * 2018-09-07 2020-03-19 キオクシア株式会社 インプリント装置、インプリント方法、及び半導体装置の製造方法
US11018018B2 (en) * 2018-12-05 2021-05-25 Canon Kabushiki Kaisha Superstrate and methods of using the same
US10754078B2 (en) * 2018-12-20 2020-08-25 Canon Kabushiki Kaisha Light source, a shaping system using the light source and an article manufacturing method
US10892167B2 (en) * 2019-03-05 2021-01-12 Canon Kabushiki Kaisha Gas permeable superstrate and methods of using the same
US11664220B2 (en) * 2019-10-08 2023-05-30 Canon Kabushiki Kaisha Edge exclusion apparatus and methods of using the same
US11776840B2 (en) * 2019-10-29 2023-10-03 Canon Kabushiki Kaisha Superstrate chuck, method of use, and method of manufacturing an article
US11215921B2 (en) * 2019-10-31 2022-01-04 Canon Kabushiki Kaisha Residual layer thickness compensation in nano-fabrication by modified drop pattern
US11550216B2 (en) * 2019-11-25 2023-01-10 Canon Kabushiki Kaisha Systems and methods for curing a shaped film
US11107678B2 (en) * 2019-11-26 2021-08-31 Canon Kabushiki Kaisha Wafer process, apparatus and method of manufacturing an article
JP7346268B2 (ja) * 2019-12-05 2023-09-19 キヤノン株式会社 インプリント用のテンプレート、テンプレートを用いたインプリント方法
US11567401B2 (en) * 2019-12-20 2023-01-31 Canon Kabushiki Kaisha Nanofabrication method with correction of distortion within an imprint system
US11656546B2 (en) * 2020-02-27 2023-05-23 Canon Kabushiki Kaisha Exposure apparatus for uniform light intensity and methods of using the same
JP2021144985A (ja) * 2020-03-10 2021-09-24 キオクシア株式会社 テンプレート、テンプレートの製造方法および半導体装置の製造方法
US12136564B2 (en) * 2020-03-30 2024-11-05 Canon Kabushiki Kaisha Superstrate and method of making it
US11443940B2 (en) * 2020-06-24 2022-09-13 Canon Kabushiki Kaisha Apparatus for uniform light intensity and methods of using the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020009994A (ja) 2018-07-12 2020-01-16 キヤノン株式会社 平坦化装置、平坦化方法及び物品の製造方法

Also Published As

Publication number Publication date
US11562924B2 (en) 2023-01-24
JP2021125680A (ja) 2021-08-30
TW202143330A (zh) 2021-11-16
KR20210098334A (ko) 2021-08-10
TWI817064B (zh) 2023-10-01
KR102831923B1 (ko) 2025-07-10
US20230061361A1 (en) 2023-03-02
US20210242073A1 (en) 2021-08-05
US12283522B2 (en) 2025-04-22

Similar Documents

Publication Publication Date Title
JP7555829B2 (ja) 平坦化装置、平坦化方法及び物品の製造方法
JP7481937B2 (ja) 平坦化方法、平坦化装置及び物品製造方法
US11776840B2 (en) Superstrate chuck, method of use, and method of manufacturing an article
JP7495949B2 (ja) 平坦化方法、物品を製造する装置および方法
JP7598359B2 (ja) ウェハプロセス、物品を製造する装置および方法
US11590687B2 (en) Systems and methods for reducing pressure while shaping a film
JP7713064B2 (ja) 方法、平坦化システム、および物品の製造方法
US11550216B2 (en) Systems and methods for curing a shaped film
US11443940B2 (en) Apparatus for uniform light intensity and methods of using the same
JP7071484B2 (ja) インプリントシステム内のディストーションの補正を伴うナノ製作方法
JP2023048109A (ja) テンプレートの製造方法
US20210187795A1 (en) Template apparatus and methods of using the same
TWI885280B (zh) 使表面成形的方法、成形系統、及製造物品的方法
US11972976B2 (en) Planarization system, planarization process, and method of manufacturing an article
US11664220B2 (en) Edge exclusion apparatus and methods of using the same
JP6951483B2 (ja) 質量速度変動フィーチャを有するテンプレート、テンプレートを使用するナノインプリントリソグラフィ装置、およびテンプレートを使用する方法
US11587795B2 (en) Planarization apparatus including superstrate chuck with bendable periphery
US20250180985A1 (en) Method of Using and Fabricating a Nanoimprint Template with a Mesa Sidewall Coating
US20230205080A1 (en) Template, method of forming a template, apparatus and method of manufacturing an article

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230914

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230914

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20240515

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240520

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240719

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240813

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240911

R150 Certificate of patent or registration of utility model

Ref document number: 7555829

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150