JP7528109B2 - 光検出のための光センサ及び検出器 - Google Patents

光検出のための光センサ及び検出器 Download PDF

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JP7528109B2
JP7528109B2 JP2021550179A JP2021550179A JP7528109B2 JP 7528109 B2 JP7528109 B2 JP 7528109B2 JP 2021550179 A JP2021550179 A JP 2021550179A JP 2021550179 A JP2021550179 A JP 2021550179A JP 7528109 B2 JP7528109 B2 JP 7528109B2
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electrode layer
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JP2022522010A5 (https=
JPWO2020173985A5 (https=
JP2022522010A (ja
Inventor
ヘルメス，ヴィルフリート
ファローフ，ゼバスティアン
ミュラー，ゼバスティアン
ヘー，レギーナ
ベヒテル，ハイディ
アルテンベック，ティモ
ディットマン，ファビアン
フォイアーシュタイン，ベルトラム
フプファウアー，トマス
ハンドレック，アンケ
グスト，ロベルト
パウル カレッタ，ペーター
ケルブライン，ダニエル
ゼント，ロベルト
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トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
JP2021550179A 2019-02-27 2020-02-26 光検出のための光センサ及び検出器 Active JP7528109B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP19159710.3 2019-02-27
EP19159710 2019-02-27
PCT/EP2020/054995 WO2020173985A1 (en) 2019-02-27 2020-02-26 Optical sensor and detector for an optical detection

Publications (4)

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JP2022522010A JP2022522010A (ja) 2022-04-13
JP2022522010A5 JP2022522010A5 (https=) 2023-02-22
JPWO2020173985A5 JPWO2020173985A5 (https=) 2023-02-22
JP7528109B2 true JP7528109B2 (ja) 2024-08-05

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JP2021550179A Active JP7528109B2 (ja) 2019-02-27 2020-02-26 光検出のための光センサ及び検出器

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US (1) US11908956B2 (https=)
EP (1) EP3931880A1 (https=)
JP (1) JP7528109B2 (https=)
KR (1) KR102714386B1 (https=)
CN (1) CN113491016B (https=)
WO (1) WO2020173985A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109863599B (zh) 2016-11-30 2024-06-18 纽约州州立大学研究基金会 混合有源矩阵平板检测器系统和方法
CN112436062B (zh) * 2020-12-01 2022-12-02 上海大学 用于碲锌镉辐射探测器的复合电极及其制备方法
CN116417535B (zh) * 2023-04-19 2024-11-15 云南师范大学 一种三端并联叠层双面光伏电池及其制备方法

Citations (6)

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JP2000101105A (ja) 1998-09-18 2000-04-07 Mitsubishi Cable Ind Ltd 光導電素子
JP2007165865A (ja) 2005-11-18 2007-06-28 Semiconductor Energy Lab Co Ltd 光電変換装置
JP2008109110A (ja) 2006-09-29 2008-05-08 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013055325A (ja) 2011-08-09 2013-03-21 Rohm Co Ltd 光検出素子、光検出装置およびオートライト装置
WO2015044529A1 (en) 2013-09-27 2015-04-02 Lumichip Oy Assembly level encapsulation layer with multifunctional purpose, and method of producing the same
WO2018019921A1 (en) 2016-07-29 2018-02-01 Trinamix Gmbh Optical sensor and detector for optical detection

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US4037311A (en) * 1976-07-14 1977-07-26 U.S. Philips Corporation Methods of manufacturing infra-red detector elements
JPS54154292A (en) * 1978-05-25 1979-12-05 Matsushita Electric Ind Co Ltd Photo detecting semiconductor device
JPS56133884A (en) 1980-03-24 1981-10-20 Hitachi Ltd Manufacture of photoelectric transducer
JPS6035830B2 (ja) * 1981-01-26 1985-08-16 松下電子工業株式会社 固体撮像装置
JPS60241260A (ja) * 1984-05-16 1985-11-30 Toshiba Corp 固体撮像装置
JPH0394468A (ja) 1989-09-07 1991-04-19 Toshiba Corp 積層型固体撮像装置及びその製造方法
JPH03241260A (ja) 1990-02-16 1991-10-28 Matsushita Refrig Co Ltd 多室型空気調和機
JPH07169931A (ja) * 1993-12-16 1995-07-04 Hitachi Ltd 半導体装置及びその製造方法
KR101389808B1 (ko) 2005-11-18 2014-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전변환장치
US7791012B2 (en) 2006-09-29 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes
JP2009010075A (ja) * 2007-06-27 2009-01-15 Fujifilm Corp 放射線画像検出器
EP3029485B1 (en) 2011-02-15 2019-12-11 Basf Se Detector for optically detecting at least one object
US9389315B2 (en) 2012-12-19 2016-07-12 Basf Se Detector comprising a transversal optical sensor for detecting a transversal position of a light beam from an object and a longitudinal optical sensor sensing a beam cross-section of the light beam in a sensor region
JP2014241260A (ja) 2013-06-12 2014-12-25 日産自動車株式会社 燃料電池システム
JP6841769B2 (ja) 2015-01-30 2021-03-10 トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 少なくとも１個の物体を光学的に検出する検出器
CN107533126A (zh) * 2015-04-22 2018-01-02 特里纳米克斯股份有限公司 用于至少一个对象的光学检测的检测器
CN109923372B (zh) * 2016-10-25 2021-12-21 特里纳米克斯股份有限公司 采用集成滤波器的红外光学检测器
JP7080059B2 (ja) 2018-01-11 2022-06-03 池上通信機株式会社 放送用モニタのムラ検出装置及び当該装置を用いたムラ補正システム
KR20210115022A (ko) 2019-01-18 2021-09-24 트리나미엑스 게엠베하 광학 센서 및 광학적 검출용 검출기

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000101105A (ja) 1998-09-18 2000-04-07 Mitsubishi Cable Ind Ltd 光導電素子
JP2007165865A (ja) 2005-11-18 2007-06-28 Semiconductor Energy Lab Co Ltd 光電変換装置
JP2008109110A (ja) 2006-09-29 2008-05-08 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013055325A (ja) 2011-08-09 2013-03-21 Rohm Co Ltd 光検出素子、光検出装置およびオートライト装置
WO2015044529A1 (en) 2013-09-27 2015-04-02 Lumichip Oy Assembly level encapsulation layer with multifunctional purpose, and method of producing the same
WO2018019921A1 (en) 2016-07-29 2018-02-01 Trinamix Gmbh Optical sensor and detector for optical detection

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Publication number Publication date
CN113491016A (zh) 2021-10-08
CN113491016B (zh) 2025-10-17
US20220140155A1 (en) 2022-05-05
EP3931880A1 (en) 2022-01-05
KR20210129144A (ko) 2021-10-27
KR102714386B1 (ko) 2024-10-11
US11908956B2 (en) 2024-02-20
WO2020173985A1 (en) 2020-09-03
JP2022522010A (ja) 2022-04-13

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