CN113491016B - 用于光学检测的光学传感器和检测器 - Google Patents
用于光学检测的光学传感器和检测器Info
- Publication number
- CN113491016B CN113491016B CN202080017095.1A CN202080017095A CN113491016B CN 113491016 B CN113491016 B CN 113491016B CN 202080017095 A CN202080017095 A CN 202080017095A CN 113491016 B CN113491016 B CN 113491016B
- Authority
- CN
- China
- Prior art keywords
- layer
- electrode layer
- electrode
- optical sensor
- photoconductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/93—Interconnections
- H10F77/933—Interconnections for devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/50—Encapsulations or containers
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP19159710.3 | 2019-02-27 | ||
| EP19159710 | 2019-02-27 | ||
| PCT/EP2020/054995 WO2020173985A1 (en) | 2019-02-27 | 2020-02-26 | Optical sensor and detector for an optical detection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113491016A CN113491016A (zh) | 2021-10-08 |
| CN113491016B true CN113491016B (zh) | 2025-10-17 |
Family
ID=65628668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080017095.1A Active CN113491016B (zh) | 2019-02-27 | 2020-02-26 | 用于光学检测的光学传感器和检测器 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11908956B2 (https=) |
| EP (1) | EP3931880A1 (https=) |
| JP (1) | JP7528109B2 (https=) |
| KR (1) | KR102714386B1 (https=) |
| CN (1) | CN113491016B (https=) |
| WO (1) | WO2020173985A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109863599B (zh) | 2016-11-30 | 2024-06-18 | 纽约州州立大学研究基金会 | 混合有源矩阵平板检测器系统和方法 |
| CN112436062B (zh) * | 2020-12-01 | 2022-12-02 | 上海大学 | 用于碲锌镉辐射探测器的复合电极及其制备方法 |
| CN116417535B (zh) * | 2023-04-19 | 2024-11-15 | 云南师范大学 | 一种三端并联叠层双面光伏电池及其制备方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54154292A (en) * | 1978-05-25 | 1979-12-05 | Matsushita Electric Ind Co Ltd | Photo detecting semiconductor device |
| JP2008109110A (ja) * | 2006-09-29 | 2008-05-08 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| WO2018019921A1 (en) * | 2016-07-29 | 2018-02-01 | Trinamix Gmbh | Optical sensor and detector for optical detection |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4037311A (en) * | 1976-07-14 | 1977-07-26 | U.S. Philips Corporation | Methods of manufacturing infra-red detector elements |
| JPS56133884A (en) | 1980-03-24 | 1981-10-20 | Hitachi Ltd | Manufacture of photoelectric transducer |
| JPS6035830B2 (ja) * | 1981-01-26 | 1985-08-16 | 松下電子工業株式会社 | 固体撮像装置 |
| JPS60241260A (ja) * | 1984-05-16 | 1985-11-30 | Toshiba Corp | 固体撮像装置 |
| JPH0394468A (ja) | 1989-09-07 | 1991-04-19 | Toshiba Corp | 積層型固体撮像装置及びその製造方法 |
| JPH03241260A (ja) | 1990-02-16 | 1991-10-28 | Matsushita Refrig Co Ltd | 多室型空気調和機 |
| JPH07169931A (ja) * | 1993-12-16 | 1995-07-04 | Hitachi Ltd | 半導体装置及びその製造方法 |
| JP2000101105A (ja) | 1998-09-18 | 2000-04-07 | Mitsubishi Cable Ind Ltd | 光導電素子 |
| JP2007165865A (ja) | 2005-11-18 | 2007-06-28 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
| KR101389808B1 (ko) | 2005-11-18 | 2014-04-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 광전변환장치 |
| US7791012B2 (en) | 2006-09-29 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes |
| JP2009010075A (ja) * | 2007-06-27 | 2009-01-15 | Fujifilm Corp | 放射線画像検出器 |
| EP3029485B1 (en) | 2011-02-15 | 2019-12-11 | Basf Se | Detector for optically detecting at least one object |
| JP6046377B2 (ja) | 2011-08-09 | 2016-12-14 | ローム株式会社 | 光検出素子、光検出装置およびオートライト装置 |
| US9389315B2 (en) | 2012-12-19 | 2016-07-12 | Basf Se | Detector comprising a transversal optical sensor for detecting a transversal position of a light beam from an object and a longitudinal optical sensor sensing a beam cross-section of the light beam in a sensor region |
| JP2014241260A (ja) | 2013-06-12 | 2014-12-25 | 日産自動車株式会社 | 燃料電池システム |
| FI20135967A7 (fi) | 2013-09-27 | 2015-03-28 | Lumichip Oy | Asennustason monitoiminen kapselointikerros ja menetelmä sen valmistamiseksi |
| JP6841769B2 (ja) | 2015-01-30 | 2021-03-10 | トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | 少なくとも１個の物体を光学的に検出する検出器 |
| CN107533126A (zh) * | 2015-04-22 | 2018-01-02 | 特里纳米克斯股份有限公司 | 用于至少一个对象的光学检测的检测器 |
| CN109923372B (zh) * | 2016-10-25 | 2021-12-21 | 特里纳米克斯股份有限公司 | 采用集成滤波器的红外光学检测器 |
| JP7080059B2 (ja) | 2018-01-11 | 2022-06-03 | 池上通信機株式会社 | 放送用モニタのムラ検出装置及び当該装置を用いたムラ補正システム |
| KR20210115022A (ko) | 2019-01-18 | 2021-09-24 | 트리나미엑스 게엠베하 | 광학 센서 및 광학적 검출용 검출기 |
-
2020
- 2020-02-26 KR KR1020217029999A patent/KR102714386B1/ko active Active
- 2020-02-26 EP EP20706281.1A patent/EP3931880A1/en active Pending
- 2020-02-26 JP JP2021550179A patent/JP7528109B2/ja active Active
- 2020-02-26 WO PCT/EP2020/054995 patent/WO2020173985A1/en not_active Ceased
- 2020-02-26 US US17/434,568 patent/US11908956B2/en active Active
- 2020-02-26 CN CN202080017095.1A patent/CN113491016B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54154292A (en) * | 1978-05-25 | 1979-12-05 | Matsushita Electric Ind Co Ltd | Photo detecting semiconductor device |
| JP2008109110A (ja) * | 2006-09-29 | 2008-05-08 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| WO2018019921A1 (en) * | 2016-07-29 | 2018-02-01 | Trinamix Gmbh | Optical sensor and detector for optical detection |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113491016A (zh) | 2021-10-08 |
| US20220140155A1 (en) | 2022-05-05 |
| JP7528109B2 (ja) | 2024-08-05 |
| EP3931880A1 (en) | 2022-01-05 |
| KR20210129144A (ko) | 2021-10-27 |
| KR102714386B1 (ko) | 2024-10-11 |
| US11908956B2 (en) | 2024-02-20 |
| WO2020173985A1 (en) | 2020-09-03 |
| JP2022522010A (ja) | 2022-04-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TG01 | Patent term adjustment | ||
| TG01 | Patent term adjustment |