JP7510350B2 - アレイ基板及び表示装置 - Google Patents

アレイ基板及び表示装置 Download PDF

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Publication number
JP7510350B2
JP7510350B2 JP2020552757A JP2020552757A JP7510350B2 JP 7510350 B2 JP7510350 B2 JP 7510350B2 JP 2020552757 A JP2020552757 A JP 2020552757A JP 2020552757 A JP2020552757 A JP 2020552757A JP 7510350 B2 JP7510350 B2 JP 7510350B2
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Japan
Prior art keywords
electrostatic discharge
electrode
signal line
discharge protection
protection element
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JP2020552757A
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English (en)
Japanese (ja)
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JP2022504998A5 (https=
JP2022504998A (ja
Inventor
チュンピン ロング
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Publication of JP2022504998A5 publication Critical patent/JP2022504998A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/273—Interconnections for measuring or testing, e.g. probe pads

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2020552757A 2018-11-22 2019-11-21 アレイ基板及び表示装置 Active JP7510350B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201821934974.7 2018-11-22
CN201821934974.7U CN208904019U (zh) 2018-11-22 2018-11-22 显示基板、静电放电保护电路和显示装置
PCT/CN2019/119982 WO2020103909A1 (zh) 2018-11-22 2019-11-21 阵列基板、静电放电保护电路和显示装置

Publications (3)

Publication Number Publication Date
JP2022504998A JP2022504998A (ja) 2022-01-14
JP2022504998A5 JP2022504998A5 (https=) 2022-11-22
JP7510350B2 true JP7510350B2 (ja) 2024-07-03

Family

ID=66578076

Family Applications (1)

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JP2020552757A Active JP7510350B2 (ja) 2018-11-22 2019-11-21 アレイ基板及び表示装置

Country Status (5)

Country Link
US (1) US11315920B2 (https=)
EP (1) EP3886164A4 (https=)
JP (1) JP7510350B2 (https=)
CN (1) CN208904019U (https=)
WO (1) WO2020103909A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN208904019U (zh) * 2018-11-22 2019-05-24 京东方科技集团股份有限公司 显示基板、静电放电保护电路和显示装置
TWI709800B (zh) * 2019-09-25 2020-11-11 友達光電股份有限公司 顯示面板
WO2021102971A1 (zh) * 2019-11-29 2021-06-03 京东方科技集团股份有限公司 显示基板和显示装置
CN111243429B (zh) 2020-02-13 2021-11-09 京东方科技集团股份有限公司 一种显示面板及显示装置
CN112509467B (zh) * 2020-11-27 2022-03-08 合肥维信诺科技有限公司 显示基板、静电释放装置及方法
CN112631470B (zh) * 2021-01-07 2024-01-05 武汉华星光电半导体显示技术有限公司 显示面板及电子设备
CN112992999B (zh) * 2021-02-10 2024-04-16 京东方科技集团股份有限公司 显示母板及显示面板
CN113178443B (zh) * 2021-04-09 2022-06-10 深圳市华星光电半导体显示技术有限公司 一种具有防静电结构的显示屏及其制备方法
US11921943B2 (en) * 2021-11-10 2024-03-05 Lg Display Co., Ltd. Display device
CN114361135A (zh) * 2021-12-31 2022-04-15 昆山国显光电有限公司 阵列基板、显示面板及显示装置
US20240395830A1 (en) * 2022-08-30 2024-11-28 Hefei Boe Joint Technology Co., Ltd. Display substrate, manufacturing method thereof, and display device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6175394B1 (en) 1996-12-03 2001-01-16 Chung-Cheng Wu Capacitively coupled field effect transistors for electrostatic discharge protection in flat panel displays
JP2006267545A (ja) 2005-03-24 2006-10-05 Sanyo Epson Imaging Devices Corp 電気光学装置および電子機器

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KR0166894B1 (ko) * 1995-02-20 1999-03-30 구자홍 액정표시장치
TWI271847B (en) * 2004-12-08 2007-01-21 Au Optronics Corp Electrostatic discharge protection circuit and method of electrostatic discharge protection
JP5564818B2 (ja) * 2009-03-31 2014-08-06 富士通セミコンダクター株式会社 電源クランプ回路
KR102000738B1 (ko) 2013-01-28 2019-07-23 삼성디스플레이 주식회사 정전기 방지 회로 및 이를 포함하는 표시 장치
CN103117285B (zh) * 2013-02-04 2015-12-02 京东方科技集团股份有限公司 一种阵列基板、显示装置及阵列基板的制造方法
CN104122690A (zh) 2013-08-23 2014-10-29 深超光电（深圳）有限公司 液晶显示装置以及显示装置
KR102145390B1 (ko) * 2013-10-25 2020-08-19 삼성디스플레이 주식회사 정전기 방전 회로를 포함하는 표시 장치
CN106415801B (zh) * 2014-06-03 2019-12-13 夏普株式会社 半导体装置及其制造方法
KR102360010B1 (ko) * 2015-06-05 2022-02-10 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR102482034B1 (ko) * 2015-07-28 2022-12-29 삼성디스플레이 주식회사 유기전계발광 표시장치 및 그의 리페어 방법
US20170090236A1 (en) * 2015-09-28 2017-03-30 Apple Inc. Bonding Pads for Displays
CN108877650B (zh) * 2017-05-12 2020-12-18 京东方科技集团股份有限公司 像素驱动电路、驱动补偿方法、显示基板和显示装置
CN107807467B (zh) * 2017-11-07 2023-08-22 深圳市华星光电半导体显示技术有限公司 防止面板外围走线发生静电击伤的结构
CN207925467U (zh) 2018-03-29 2018-09-28 京东方科技集团股份有限公司 阵列基板及显示装置
CN208904019U (zh) 2018-11-22 2019-05-24 京东方科技集团股份有限公司 显示基板、静电放电保护电路和显示装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6175394B1 (en) 1996-12-03 2001-01-16 Chung-Cheng Wu Capacitively coupled field effect transistors for electrostatic discharge protection in flat panel displays
JP2006267545A (ja) 2005-03-24 2006-10-05 Sanyo Epson Imaging Devices Corp 電気光学装置および電子機器

Also Published As

Publication number Publication date
EP3886164A4 (en) 2022-07-27
CN208904019U (zh) 2019-05-24
WO2020103909A1 (zh) 2020-05-28
US20200350309A1 (en) 2020-11-05
US11315920B2 (en) 2022-04-26
EP3886164A1 (en) 2021-09-29
JP2022504998A (ja) 2022-01-14

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