JP7480058B2 - 高周波フィルタ用の基板を製造するためのプロセス - Google Patents
高周波フィルタ用の基板を製造するためのプロセス Download PDFInfo
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- JP7480058B2 JP7480058B2 JP2020552315A JP2020552315A JP7480058B2 JP 7480058 B2 JP7480058 B2 JP 7480058B2 JP 2020552315 A JP2020552315 A JP 2020552315A JP 2020552315 A JP2020552315 A JP 2020552315A JP 7480058 B2 JP7480058 B2 JP 7480058B2
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- 239000000758 substrate Substances 0.000 title claims description 50
- 238000000034 method Methods 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000151 deposition Methods 0.000 claims description 6
- 239000002210 silicon-based material Substances 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 5
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 4
- 238000010292 electrical insulation Methods 0.000 claims description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000002800 charge carrier Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 49
- 239000000463 material Substances 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 210000001520 comb Anatomy 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000010070 molecular adhesion Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 210000000009 suboesophageal ganglion Anatomy 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02866—Means for compensation or elimination of undesirable effects of bulk wave excitation and reflections
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
共振器またはフィルタなどの高周波(radiofrequency:RF)デバイスを、一般的にシリコンなどの半導体材料でできているキャリア基板、電気絶縁層、および圧電層を基板のベースから基板の表面まで連続して備える基板に製造することは既知の慣行である。
Claims (7)
- 圧電層(200、200’)を電気絶縁層(300)を介してキャリア基板(100)に接合することによって高周波フィルタ用の基板を製造するためのプロセスであって、
前記キャリア基板(100)に接合される前記圧電層(200、200’)の表面にSOG(スピンオンガラス)のファミリーに属する酸化物をスピンコーティングすることによって前記電気絶縁層(300)を堆積するステップと、
続いて、前記圧電層(200、200’)を前記電気絶縁層(300)を介して前記キャリア基板(100)に接合する前に、前記電気絶縁層(300)を緻密化するためにアニーリングするステップと、
を備えることを特徴とする、プロセス。 - 前記圧電層(200、200’)の厚さが5μmを超える、請求項1に記載のプロセス。
- 前記キャリア基板(100)に接合される前記圧電層(200、200’)の前記表面が、高周波を反射するのに適切な粗い表面を有する、請求項1から2のいずれか一項に記載のプロセス。
- 前記圧電層(200、200’)の前記粗い表面が1μmを超える粗さを有する、請求項3に記載のプロセス。
- 前記キャリア基板(100)がシリコン材料でできている、請求項1から4のいずれか一項に記載のプロセス。
- シリコン材料で作られた前記キャリア基板(100)が、前記圧電層(200、200)と接合される界面に向かうトラッピング層(400)を備え、前記トラッピング層(400)は電荷キャリアをトラップする、請求項1から5のいずれか一項に記載のプロセス。
- 前記圧電層(200、200’)がニオブ酸リチウムまたはタンタル酸リチウムでできている、請求項1から6のいずれか一項に記載のプロセス。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2023121758A JP2023143949A (ja) | 2018-03-29 | 2023-07-26 | 高周波フィルタ用の基板を製造するためのプロセス |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1800258 | 2018-03-29 | ||
FR1800258A FR3079661A1 (fr) | 2018-03-29 | 2018-03-29 | Procede de fabrication d'un substrat pour filtre radiofrequence |
PCT/IB2019/000204 WO2019186265A1 (fr) | 2018-03-29 | 2019-03-27 | Procédé de fabrication d'un substrat pour filtre radiofréquence |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023121758A Division JP2023143949A (ja) | 2018-03-29 | 2023-07-26 | 高周波フィルタ用の基板を製造するためのプロセス |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021520095A JP2021520095A (ja) | 2021-08-12 |
JP7480058B2 true JP7480058B2 (ja) | 2024-05-09 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2020552315A Active JP7480058B2 (ja) | 2018-03-29 | 2019-03-27 | 高周波フィルタ用の基板を製造するためのプロセス |
JP2023121758A Withdrawn JP2023143949A (ja) | 2018-03-29 | 2023-07-26 | 高周波フィルタ用の基板を製造するためのプロセス |
Family Applications After (1)
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JP2023121758A Withdrawn JP2023143949A (ja) | 2018-03-29 | 2023-07-26 | 高周波フィルタ用の基板を製造するためのプロセス |
Country Status (7)
Country | Link |
---|---|
US (2) | US11979132B2 (ja) |
EP (1) | EP3776630A1 (ja) |
JP (2) | JP7480058B2 (ja) |
CN (1) | CN111919282A (ja) |
FR (1) | FR3079661A1 (ja) |
SG (1) | SG11202009531QA (ja) |
WO (1) | WO2019186265A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3108788A1 (fr) * | 2020-03-24 | 2021-10-01 | Soitec | Procédé de fabrication d’une structure piézoélectrique pour dispositif radiofréquence et pouvant servir pour le transfert d’une couche piézoélectrique, et procédé de transfert d’une telle couche piézoélectrique |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002330047A (ja) | 2001-04-27 | 2002-11-15 | Kyocera Corp | 弾性表面波素子 |
US20110195575A1 (en) | 2010-02-11 | 2011-08-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | novel hard mask removal method |
WO2013031617A1 (ja) | 2011-08-26 | 2013-03-07 | 株式会社村田製作所 | 圧電デバイス、および、圧電デバイスの製造方法 |
JP2013225652A (ja) | 2012-04-20 | 2013-10-31 | Sk Hynix Inc | 半導体素子及びその製造方法 |
JP2017532758A (ja) | 2014-08-01 | 2017-11-02 | ソイテック | 無線周波アプリケーションの構造 |
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JP3082688B2 (ja) * | 1996-11-05 | 2000-08-28 | ヤマハ株式会社 | 配線形成法 |
JP3952666B2 (ja) | 2000-06-23 | 2007-08-01 | 株式会社日立製作所 | 弾性表面波素子 |
US6436614B1 (en) * | 2000-10-20 | 2002-08-20 | Feng Zhou | Method for the formation of a thin optical crystal layer overlying a low dielectric constant substrate |
JP4515719B2 (ja) * | 2003-06-06 | 2010-08-04 | 株式会社東芝 | 半導体基板 |
US7268051B2 (en) * | 2005-08-26 | 2007-09-11 | Corning Incorporated | Semiconductor on glass insulator with deposited barrier layer |
JP4247281B2 (ja) * | 2006-07-27 | 2009-04-02 | 株式会社コイケ | 圧電基板及びその製造方法 |
JP2009089006A (ja) * | 2007-09-28 | 2009-04-23 | Nippon Dempa Kogyo Co Ltd | 圧電薄膜振動子の製造方法及び圧電薄膜振動子 |
CN102624352B (zh) | 2010-10-06 | 2015-12-09 | 日本碍子株式会社 | 复合基板的制造方法以及复合基板 |
FR2973158B1 (fr) * | 2011-03-22 | 2014-02-28 | Soitec Silicon On Insulator | Procédé de fabrication d'un substrat de type semi-conducteur sur isolant pour applications radiofréquences |
JP5862368B2 (ja) * | 2012-02-28 | 2016-02-16 | 株式会社村田製作所 | 圧電デバイスの製造方法 |
JP2013223025A (ja) * | 2012-04-13 | 2013-10-28 | Taiyo Yuden Co Ltd | フィルタ装置、フィルタ装置の製造方法及びデュプレクサ |
KR101402988B1 (ko) * | 2012-06-13 | 2014-06-11 | 한국과학기술연구원 | 압전 복합체를 이용한 플렉서블 압전 에너지 하베스팅 소자의 제조 방법 및 이로부터 제조된 플렉서블 압전 에너지 하베스팅 소자 |
FR3053532B1 (fr) | 2016-06-30 | 2018-11-16 | Soitec | Structure hybride pour dispositif a ondes acoustiques de surface |
JP6621384B2 (ja) | 2016-07-20 | 2019-12-18 | 信越化学工業株式会社 | 弾性表面波デバイス用複合基板の製造方法 |
-
2018
- 2018-03-29 FR FR1800258A patent/FR3079661A1/fr active Pending
-
2019
- 2019-03-27 CN CN201980023115.3A patent/CN111919282A/zh active Pending
- 2019-03-27 SG SG11202009531QA patent/SG11202009531QA/en unknown
- 2019-03-27 JP JP2020552315A patent/JP7480058B2/ja active Active
- 2019-03-27 US US17/042,016 patent/US11979132B2/en active Active
- 2019-03-27 EP EP19721698.9A patent/EP3776630A1/fr active Pending
- 2019-03-27 WO PCT/IB2019/000204 patent/WO2019186265A1/fr active Application Filing
-
2023
- 2023-07-26 JP JP2023121758A patent/JP2023143949A/ja not_active Withdrawn
-
2024
- 2024-03-06 US US18/597,647 patent/US20240213944A1/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002330047A (ja) | 2001-04-27 | 2002-11-15 | Kyocera Corp | 弾性表面波素子 |
US20110195575A1 (en) | 2010-02-11 | 2011-08-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | novel hard mask removal method |
WO2013031617A1 (ja) | 2011-08-26 | 2013-03-07 | 株式会社村田製作所 | 圧電デバイス、および、圧電デバイスの製造方法 |
JP2013225652A (ja) | 2012-04-20 | 2013-10-31 | Sk Hynix Inc | 半導体素子及びその製造方法 |
JP2017532758A (ja) | 2014-08-01 | 2017-11-02 | ソイテック | 無線周波アプリケーションの構造 |
Also Published As
Publication number | Publication date |
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US11979132B2 (en) | 2024-05-07 |
JP2021520095A (ja) | 2021-08-12 |
CN111919282A (zh) | 2020-11-10 |
KR20200135418A (ko) | 2020-12-02 |
JP2023143949A (ja) | 2023-10-06 |
WO2019186265A1 (fr) | 2019-10-03 |
SG11202009531QA (en) | 2020-10-29 |
US20210159869A1 (en) | 2021-05-27 |
FR3079661A1 (fr) | 2019-10-04 |
US20240213944A1 (en) | 2024-06-27 |
EP3776630A1 (fr) | 2021-02-17 |
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