JP7474703B2 - 微粒子状非フィブリル化バインダを含む乾式電極フィルムのための組成物および方法 - Google Patents
微粒子状非フィブリル化バインダを含む乾式電極フィルムのための組成物および方法 Download PDFInfo
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- JP7474703B2 JP7474703B2 JP2020551871A JP2020551871A JP7474703B2 JP 7474703 B2 JP7474703 B2 JP 7474703B2 JP 2020551871 A JP2020551871 A JP 2020551871A JP 2020551871 A JP2020551871 A JP 2020551871A JP 7474703 B2 JP7474703 B2 JP 7474703B2
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- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
- 239000011115 styrene butadiene Substances 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
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Description
乾式電極フィルムは、乾式活性材料と、フィブリル化バインダと約0.5~40μmのD50粒径を有する微粒子状の非フィブリル化バインダを含む乾式バインダと、を含み、その乾式電極フィルムは自立型である。
96重量%の黒鉛および4重量%のバインダを含み、バインダが2%のPTFE、1%のCMCおよび1%のPVDFを含む乾式電池アノード電極フィルムを作製した。他の電極フィルム組成物を想定し、調製することができ、本明細書の開示は、開示される特定の組成物に限定されない。
Claims (14)
- 乾燥非フィブリル化バインダを、高剪断で処理して乾燥微粒子状非フィブリル化バインダを形成する工程と、
乾燥フィブリル化バインダを、前記乾燥微粒子状非フィブリル化バインダと組み合わせて、乾式電極フィルム混合物を形成する工程と、
前記乾式電極フィルム混合物をカレンダ加工して自立型乾式電極フィルムを形成する工程と、
を含む乾式の形成プロセスであり、
前記乾燥非フィブリル化バインダを高剪断で処理することは、ジェット粉砕することを含み、
前記乾燥微粒子状非フィブリル化バインダは、1~10μmのD 50 粒径を有する、エネルギー貯蔵装置の乾式電極フィルム製造方法。 - 乾燥非フィブリル化バインダを高剪断で加工して乾燥微粒子状非フィブリル化バインダを形成する工程と、
第1非破壊混合プロセスによって、前記乾燥微粒子状非フィブリル化バインダを、第1乾燥活物質と混合し、乾式バルク活物質混合物を形成する工程と、
乾燥フィブリル化バインダを、第2乾燥活物質と高剪断混合プロセスによって混合し、乾式構造バインダ混合物を形成する工程と、
前記乾式バルク活物質混合物と前記乾式構造バインダ混合物とを、第2非破壊混合プロセスによって混合し、乾式電極フィルム混合物を形成する工程と、
前記乾式電極フィルム混合物から自立型乾式電極フィルムを製造する工程と、
を含む乾式の形成プロセスであり、
前記乾燥非フィブリル化バインダを高剪断で加工することは、ジェット粉砕することを含み、
前記乾燥微粒子状非フィブリル化バインダは、1~10μmのD 50 粒径を有する、エネルギー貯蔵装置の乾式電極フィルム製造方法。 - 前記乾式電極フィルム混合物が50重量%までの前記乾燥微粒子状非フィブリル化バインダを含む、請求項1又は2に記載の乾式電極フィルム製造方法。
- 前記乾燥微粒子状非フィブリル化バインダが、セルロースおよびセルロース誘導体から選択され、前記セルロースおよび前記セルロース誘導体は、セルロース、セルロースエステル、セルロースエーテル、硝酸セルロース、カルボキシアルキルセルロース、セルロース塩およびセルロース塩誘導体のうちの少なくとも1つから選択される、請求項1~3のいずれか1項に記載の乾式電極フィルム製造方法。
- 前記乾燥微粒子状非フィブリル化バインダが、セルロースおよびセルロース誘導体から選択され、前記セルロースおよび前記セルロース誘導体は、セルロース、セルロースアセテート、メチルセルロース、エチルセルロース、ヒドロキシプロピルセルロース(HPC)、ヒドロキシエチルセルロース(HEC)、硝酸セルロース、カルボキシメチルセルロース(CMC)、カルボキシエチルセルロース、カルボキシプロピルセルロース、カルボキシイソプロピルセルロース、ナトリウムセルロース、硝酸ナトリウムセルロースおよびカルボキシアルキルセルロースナトリウムのうちの少なくとも1つから選択される、請求項1~3のいずれか1項に記載の乾式電極フィルム製造方法。
- 前記セルロースまたは前記セルロース誘導体が、約10,000~約500,000の数平均分子量を有する、請求項4又は5に記載の乾式電極フィルム製造方法。
- 前記セルロース誘導体が、約0.7~約1.5の置換度を有する、請求項4~6のいずれか1項に記載の乾式電極フィルム製造方法。
- 前記乾燥フィブリル化バインダがポリテトラフルオロエチレン(PTFE)を含む、請求項1~7のいずれか1項に記載の乾式電極フィルム製造方法。
- 前記乾式電極フィルムは、穴、亀裂および表面ピットがない、請求項1~8のいずれか1項に記載の乾式電極フィルム製造方法。
- 前記乾式電極フィルムが、少なくとも1N/mm2の引張強度を有する、請求項1~9のいずれか1項に記載の乾式電極フィルム製造方法。
- 前記乾式電極フィルムが、グラファイトを含む、請求項1~10のいずれか1項に記載の乾式電極フィルム製造方法。
- 前記乾式電極フィルムが、少なくとも約250μmの厚さを有する、請求項1~11のいずれか1項に記載の乾式電極フィルム製造方法。
- 前記乾式電極フィルム混合物が、さらに、追加の非フィブリル化バインダを含む、請求項1~12のいずれか1項に記載の乾式電極フィルム製造方法。
- 前記乾式電極フィルムが、少なくとも約92wt%の乾燥活物質を含む、請求項1~13のいずれか1項に記載の乾式電極フィルム製造方法。
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