JP7473535B2 - 熱電素子 - Google Patents
熱電素子 Download PDFInfo
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- JP7473535B2 JP7473535B2 JP2021513289A JP2021513289A JP7473535B2 JP 7473535 B2 JP7473535 B2 JP 7473535B2 JP 2021513289 A JP2021513289 A JP 2021513289A JP 2021513289 A JP2021513289 A JP 2021513289A JP 7473535 B2 JP7473535 B2 JP 7473535B2
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- 239000011347 resin Substances 0.000 claims description 137
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- 238000007747 plating Methods 0.000 claims description 39
- 229910000679 solder Inorganic materials 0.000 claims description 15
- 229910052799 carbon Inorganic materials 0.000 claims description 14
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- 229910052582 BN Inorganic materials 0.000 description 27
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 11
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- 150000001875 compounds Chemical class 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 7
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- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
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- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
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- 125000000524 functional group Chemical group 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000012948 isocyanate Substances 0.000 description 2
- 150000002513 isocyanates Chemical class 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
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- 239000011669 selenium Substances 0.000 description 2
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- 229910016339 Bi—Sb—Te Inorganic materials 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910018110 Se—Te Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
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- 229910052804 chromium Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
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- 229910052742 iron Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- 238000005382 thermal cycling Methods 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- 238000005406 washing Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Powder Metallurgy (AREA)
- Hall/Mr Elements (AREA)
- Laminated Bodies (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
Description
Claims (17)
- 第1金属基板、
前記第1金属基板上に配置される第1樹脂層、
前記第1樹脂層上に配置された複数の第1電極、
前記複数の第1電極上に配置された複数のP型熱電レッグおよび複数のN型熱電レッグ、
前記複数のP型熱電レッグおよび複数のN型熱電レッグ上に配置された複数の第2電極、
前記複数の第2電極上に配置される第2樹脂層、そして
前記第2樹脂層上に配置される第2金属基板を含み、
前記複数の第1電極のうち少なくとも一つは、前記第1樹脂層と接触する第1面、前記第1面に対向し一対のP型熱電レッグおよびN型熱電レッグが配置される第2面、そして前記第2面の縁に沿って配置される第1突出部を含み、
前記第1突出部が前記第2面の縁から前記一対のP型熱電レッグおよびN型熱電レッグが配置される領域に近づくほど前記第1突出部の高さは低くなる領域を含む、熱電素子。 - 隣り合う第1電極の間に配置される前記第1樹脂層の厚さは前記隣り合う第1電極に近づくほど大きくなる、請求項1に記載の熱電素子。
- 前記隣り合う第1電極の間の少なくとも一部の領域には前記第1金属基板が露出する、請求項1又は2に記載の熱電素子。
- 前記第1突出部の幅は前記第1電極の上面の長幅の5~20%である、請求項1~3のいずれか1項に記載の熱電素子。
- 前記第1突出部は炭化物を含み、
前記炭化物の炭素含量は30wt%以上である、請求項1~4のいずれか1項に記載の熱電素子。 - 前記第1突出部は前記第2面の縁に沿って連続的に配置される、請求項1~5のいずれか1項に記載の熱電素子。
- 前記第2面上に配置された第2突出部をさらに含み、
前記第2突出部は前記一対のP型熱電レッグおよびN型熱電レッグの間に配置された、請求項1~6のいずれか1項に記載の熱電素子。 - 前記複数の第1電極のうち最外側に配置される一部の側面には前記第1樹脂層が配置される、請求項1~7のいずれか1項に記載の熱電素子。
- 隣り合う第1電極の間に配置される前記第1樹脂層の厚さは前記複数の第1電極の下面に配置される第1樹脂層の厚さより低く配置される、請求項1~8のいずれか1項に記載の熱電素子。
- 前記第1突出部が前記第2面の縁から前記一対のP型熱電レッグおよびN型熱電レッグが配置される領域に近づくほど前記第1突出部は高くなってから再び低くなる、請求項1~9のいずれか1項に記載の熱電素子。
- 前記第2突出部の最高地点の高さは、前記第1突出部の最高地点の高さより低い、請求項7に記載の熱電素子。
- 前記第2突出部は、一対の前記P型熱電レッグと前記N型熱電レッグの側面と所定距離で離隔する、請求項7に記載の熱電素子。
- 前記第2突出部は、前記第1突出部と連結される、請求項7に記載の熱電素子。
- 前記第2突出部は、前記第1突出部と分離される、請求項7に記載の熱電素子。
- Ni/Snメッキ層が、前記複数の第1電極の表面上に形成される、請求項1~14のいずれか1項に記載の熱電素子。
- 第1突出部と前記一対のP型熱電レッグおよびN型熱電レッグの間にソルダー層が収容される、請求項1~15のいずれか1項に記載の熱電素子。
- 前記複数の第1電極の最外郭には、熱電レッグが配置されないダミー電極が配置される、請求項1~16のいずれか1項に記載の熱電素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2018-0108436 | 2018-09-11 | ||
KR1020180108436A KR102608780B1 (ko) | 2018-09-11 | 2018-09-11 | 열전소자 |
PCT/KR2019/011727 WO2020055101A1 (ko) | 2018-09-11 | 2019-09-10 | 열전소자 |
Publications (2)
Publication Number | Publication Date |
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JP2022500853A JP2022500853A (ja) | 2022-01-04 |
JP7473535B2 true JP7473535B2 (ja) | 2024-04-23 |
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JP2021513289A Active JP7473535B2 (ja) | 2018-09-11 | 2019-09-10 | 熱電素子 |
Country Status (6)
Country | Link |
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US (1) | US20210328123A1 (ja) |
EP (2) | EP3852158B1 (ja) |
JP (1) | JP7473535B2 (ja) |
KR (3) | KR102608780B1 (ja) |
CN (1) | CN112703611B (ja) |
WO (1) | WO2020055101A1 (ja) |
Citations (4)
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JP2006294935A (ja) | 2005-04-12 | 2006-10-26 | Kiyoshi Inaizumi | 高能率低損失熱電モジュール |
JP2009129968A (ja) | 2007-11-20 | 2009-06-11 | Kelk Ltd | 熱電モジュール |
WO2009142240A1 (ja) | 2008-05-23 | 2009-11-26 | 株式会社村田製作所 | 熱電変換モジュールおよび熱電変換モジュールの製造方法 |
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JP2004303872A (ja) * | 2003-03-31 | 2004-10-28 | Hitachi Metals Ltd | 熱電変換モジュール |
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KR20130035016A (ko) * | 2011-09-29 | 2013-04-08 | 삼성전기주식회사 | 열전 모듈 |
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EP2843720B1 (en) * | 2012-04-27 | 2017-10-18 | LINTEC Corporation | Thermoelectric conversion material and method for manufacturing same |
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KR102304712B1 (ko) * | 2015-04-24 | 2021-09-24 | 엘지이노텍 주식회사 | 열전모듈 및 이를 포함하는 열전환장치 |
KR102304713B1 (ko) * | 2015-04-24 | 2021-09-24 | 엘지이노텍 주식회사 | 열전모듈 및 이를 포함하는 열전환장치 |
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2018
- 2018-09-11 KR KR1020180108436A patent/KR102608780B1/ko active IP Right Grant
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2019
- 2019-09-10 US US17/273,039 patent/US20210328123A1/en active Pending
- 2019-09-10 EP EP19860837.4A patent/EP3852158B1/en active Active
- 2019-09-10 WO PCT/KR2019/011727 patent/WO2020055101A1/ko unknown
- 2019-09-10 EP EP23189572.3A patent/EP4258848A3/en active Pending
- 2019-09-10 JP JP2021513289A patent/JP7473535B2/ja active Active
- 2019-09-10 CN CN201980059002.9A patent/CN112703611B/zh active Active
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2023
- 2023-11-28 KR KR1020230167956A patent/KR102652917B1/ko active IP Right Grant
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EP4258848A3 (en) | 2023-11-15 |
WO2020055101A1 (ko) | 2020-03-19 |
CN112703611B (zh) | 2024-05-24 |
EP3852158A1 (en) | 2021-07-21 |
KR102608780B1 (ko) | 2023-12-04 |
EP4258848A2 (en) | 2023-10-11 |
JP2022500853A (ja) | 2022-01-04 |
KR20200029866A (ko) | 2020-03-19 |
KR20240046450A (ko) | 2024-04-09 |
KR20230168194A (ko) | 2023-12-12 |
CN112703611A (zh) | 2021-04-23 |
EP3852158B1 (en) | 2023-11-01 |
KR102652917B1 (ko) | 2024-03-29 |
EP3852158A4 (en) | 2021-12-08 |
US20210328123A1 (en) | 2021-10-21 |
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