JP7471174B2 - 試料支持体 - Google Patents
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- JP7471174B2 JP7471174B2 JP2020138592A JP2020138592A JP7471174B2 JP 7471174 B2 JP7471174 B2 JP 7471174B2 JP 2020138592 A JP2020138592 A JP 2020138592A JP 2020138592 A JP2020138592 A JP 2020138592A JP 7471174 B2 JP7471174 B2 JP 7471174B2
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- 239000000758 substrate Substances 0.000 claims description 83
- 239000002105 nanoparticle Substances 0.000 claims description 62
- 239000000463 material Substances 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 129
- 238000005259 measurement Methods 0.000 description 22
- 150000002500 ions Chemical class 0.000 description 18
- 238000000034 method Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 13
- 238000004949 mass spectrometry Methods 0.000 description 11
- 238000007740 vapor deposition Methods 0.000 description 10
- 230000000875 corresponding effect Effects 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000000752 ionisation method Methods 0.000 description 5
- 238000007743 anodising Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001871 ion mobility spectroscopy Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000001819 mass spectrum Methods 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001269 time-of-flight mass spectrometry Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 102000005862 Angiotensin II Human genes 0.000 description 1
- 101800000733 Angiotensin-2 Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CZGUSIXMZVURDU-JZXHSEFVSA-N Ile(5)-angiotensin II Chemical compound C([C@@H](C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CC=1NC=NC=1)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](CC=1C=CC=CC=1)C([O-])=O)NC(=O)[C@@H](NC(=O)[C@H](CCCNC(N)=[NH2+])NC(=O)[C@@H]([NH3+])CC([O-])=O)C(C)C)C1=CC=C(O)C=C1 CZGUSIXMZVURDU-JZXHSEFVSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229950006323 angiotensin ii Drugs 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001698 laser desorption ionisation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/04—Arrangements for introducing or extracting samples to be analysed, e.g. vacuum locks; Arrangements for external adjustment of electron- or ion-optical components
- H01J49/0409—Sample holders or containers
- H01J49/0418—Sample holders or containers for laser desorption, e.g. matrix-assisted laser desorption/ionisation [MALDI] plates or surface enhanced laser desorption/ionisation [SELDI] plates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Description
図1の(a)、図1の(b)及び図2に示されるように、試料の成分のイオン化に用いられる試料支持体1は、基板2と、フレーム3と、導電層5と、を備えている。基板2は、例えば長方形板状を呈している。基板2の一辺の長さは、例えば数cm程度である。基板2の厚みは、例えば1μm~50μmである。
次に、試料支持体1を用いたイオン化方法及び質量分析方法について説明する。まず、図8の(a)に示されるように、試料支持体1を用意する。試料支持体1は、イオン化方法及び質量分析方法の実施者によって製造されることにより用意されてもよいし、試料支持体1の製造者又は販売者等から譲渡されることにより用意されてもよい。なお、図8に示される試料支持体1は、図1に示される試料支持体1とは異なる数の測定領域Rを有しているが、図1~図7を用いて説明した構造と同様の構造を有している。
以上、本発明の一実施形態について説明したが、本発明は、上述した実施形態に限定されるものではない。例えば、各構成の材料及び形状には、上述した材料及び形状に限らず、様々な材料及び形状を採用することができる。
Claims (9)
- 試料の成分のイオン化に用いられる試料支持体であって、
第1表面及び前記第1表面に開口する複数の孔を有する基板と、
前記第1表面上において前記孔を塞がないように設けられた導電層と、を備え、
前記導電層は、複数のナノ粒子によって構成され、30nm以上の厚みを有しており、
前記複数の孔のそれぞれは、前記基板の厚み方向に沿って延在している筒部と、前記筒部と前記第1表面とを接続し且つ前記第1表面に近づくほど広がるテーパー部と、を含み、
前記ナノ粒子は、前記第1表面及び前記テーパー部に堆積している、試料支持体。 - 前記ナノ粒子は、前記第1表面、及び前記孔の内壁面における前記第1表面側の一部に堆積している、請求項1に記載の試料支持体。
- 前記ナノ粒子の平均粒径は、100nm以下である、請求項1又は2に記載の試料支持体。
- 前記導電層は、300nm以下の厚みを有している、請求項1~3のいずれか一項に記載の試料支持体。
- 前記複数の孔のそれぞれの幅は、50nm~400nmである、請求項1~4のいずれか一項に記載の試料支持体。
- 前記複数の孔は、前記基板の厚み方向に沿って規則的に延在している、請求項1~5のいずれか一項に記載の試料支持体。
- 前記基板は、前記第1表面とは反対側の第2表面を有し、
前記複数の孔のそれぞれは、前記第1表面から前記第2表面にかけて前記基板を貫通している、請求項1~6のいずれか一項に記載の試料支持体。 - 前記導電層の厚みの前記孔間のピッチに対する比は、0.5~1である、請求項6又は7に記載の試料支持体。
- 前記導電層の材料は、白金又は金である、請求項1~8のいずれか一項に記載の試料支持体。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020138592A JP7471174B2 (ja) | 2020-08-19 | 2020-08-19 | 試料支持体 |
PCT/JP2021/017722 WO2022038843A1 (ja) | 2020-08-19 | 2021-05-10 | 試料支持体 |
EP21857995.1A EP4137448A4 (en) | 2020-08-19 | 2021-05-10 | SAMPLE HOLDER |
US18/015,804 US20230253196A1 (en) | 2020-08-19 | 2021-05-10 | Sample support |
CN202180055488.6A CN116057005A (zh) | 2020-08-19 | 2021-05-10 | 试样支承体 |
Applications Claiming Priority (1)
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JP2020138592A JP7471174B2 (ja) | 2020-08-19 | 2020-08-19 | 試料支持体 |
Publications (2)
Publication Number | Publication Date |
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JP2022034747A JP2022034747A (ja) | 2022-03-04 |
JP7471174B2 true JP7471174B2 (ja) | 2024-04-19 |
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JP2020138592A Active JP7471174B2 (ja) | 2020-08-19 | 2020-08-19 | 試料支持体 |
Country Status (5)
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US (1) | US20230253196A1 (ja) |
EP (1) | EP4137448A4 (ja) |
JP (1) | JP7471174B2 (ja) |
CN (1) | CN116057005A (ja) |
WO (1) | WO2022038843A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6918170B1 (ja) * | 2020-03-31 | 2021-08-11 | 浜松ホトニクス株式会社 | 試料支持体 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008070187A (ja) | 2006-09-13 | 2008-03-27 | Tokyo Metropolitan Univ | 表面プラズモンによるイオン化を利用した質量分析 |
JP2010071727A (ja) | 2008-09-17 | 2010-04-02 | Fujifilm Corp | 質量分析用デバイス及びそれを用いた質量分析装置、質量分析方法 |
US20120104243A1 (en) | 2010-11-03 | 2012-05-03 | University Of North Texas | Silver and Silver Nanoparticle MALDI Matrix Utilizing Online Soft Landing Ion Mobillity |
WO2013122225A1 (ja) | 2012-02-17 | 2013-08-22 | 学校法人関西大学 | 白金ナノ粒子の物理蒸着を用いたイメージング質量分析方法 |
JP6093492B1 (ja) | 2015-09-03 | 2017-03-08 | 浜松ホトニクス株式会社 | 試料支持体、及び試料支持体の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060180755A1 (en) * | 2005-02-15 | 2006-08-17 | Ying-Lan Chang | Patterned nanostructure sample supports for mass spectrometry and methods of forming thereof |
US8598511B1 (en) * | 2008-03-05 | 2013-12-03 | University Of South Florida | Carbon nanotube anchor for mass spectrometer |
JP2010271219A (ja) * | 2009-05-22 | 2010-12-02 | Fujifilm Corp | 質量分析装置、及びそれを用いた質量分析方法 |
JP6962831B2 (ja) * | 2018-02-09 | 2021-11-05 | 浜松ホトニクス株式会社 | イオン化方法及び試料支持体 |
-
2020
- 2020-08-19 JP JP2020138592A patent/JP7471174B2/ja active Active
-
2021
- 2021-05-10 WO PCT/JP2021/017722 patent/WO2022038843A1/ja unknown
- 2021-05-10 US US18/015,804 patent/US20230253196A1/en active Pending
- 2021-05-10 CN CN202180055488.6A patent/CN116057005A/zh active Pending
- 2021-05-10 EP EP21857995.1A patent/EP4137448A4/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008070187A (ja) | 2006-09-13 | 2008-03-27 | Tokyo Metropolitan Univ | 表面プラズモンによるイオン化を利用した質量分析 |
JP2010071727A (ja) | 2008-09-17 | 2010-04-02 | Fujifilm Corp | 質量分析用デバイス及びそれを用いた質量分析装置、質量分析方法 |
US20120104243A1 (en) | 2010-11-03 | 2012-05-03 | University Of North Texas | Silver and Silver Nanoparticle MALDI Matrix Utilizing Online Soft Landing Ion Mobillity |
WO2013122225A1 (ja) | 2012-02-17 | 2013-08-22 | 学校法人関西大学 | 白金ナノ粒子の物理蒸着を用いたイメージング質量分析方法 |
JP6093492B1 (ja) | 2015-09-03 | 2017-03-08 | 浜松ホトニクス株式会社 | 試料支持体、及び試料支持体の製造方法 |
Non-Patent Citations (1)
Title |
---|
YONEZAWA, T et al.,Detailed Investigation on the Possibility of Nanoparticles of Various Metal Elements for Surface-Ass,Analytical Sciences,2009年,Vol. 25 No. 3,339-346,https://doi.org/10.2116/analsci.25.339 |
Also Published As
Publication number | Publication date |
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WO2022038843A1 (ja) | 2022-02-24 |
CN116057005A (zh) | 2023-05-02 |
US20230253196A1 (en) | 2023-08-10 |
JP2022034747A (ja) | 2022-03-04 |
EP4137448A4 (en) | 2024-05-15 |
EP4137448A1 (en) | 2023-02-22 |
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