JP7468148B2 - ビーム偏向システム - Google Patents
ビーム偏向システム Download PDFInfo
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- JP7468148B2 JP7468148B2 JP2020092384A JP2020092384A JP7468148B2 JP 7468148 B2 JP7468148 B2 JP 7468148B2 JP 2020092384 A JP2020092384 A JP 2020092384A JP 2020092384 A JP2020092384 A JP 2020092384A JP 7468148 B2 JP7468148 B2 JP 7468148B2
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- 230000005284 excitation Effects 0.000 claims description 30
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- 239000002096 quantum dot Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 description 32
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
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- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/1006—Beam splitting or combining systems for splitting or combining different wavelengths
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/42—Simultaneous measurement of distance and other co-ordinates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
- G01S7/4815—Constructional features, e.g. arrangements of optical elements of transmitters alone using multiple transmitters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4817—Constructional features, e.g. arrangements of optical elements relating to scanning
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0808—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more diffracting elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
- H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Networks & Wireless Communication (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Radar Systems And Details Thereof (AREA)
Description
(数1)
λ1<λ2<・・・<λN<・・・<λM<・・・<λN+M<・・・<λ2M
第1実施形態にかかるビーム偏向システムについて説明する。このビーム偏向システムは、例えばレーザレーダやLiDAR(Light Detection And Ranging)などに適用される。
第2実施形態について説明する。本実施形態は、第1実施形態に対してレーザ光源10の数を変更したものであり、その他については第1実施形態と同様であるため、主に第1実施形態と異なる部分について説明する。
第3実施形態について説明する。本実施形態は、第1、第2実施形態で説明したレーザ光源10の具体例として、波長可変機構を備えた外部共振レーザを用いる場合について説明する。
本開示は、上記した実施形態に準拠して記述されたが、当該実施形態に限定されるものではなく、様々な変形例や均等範囲内の変形をも包含する。加えて、様々な組み合わせや形態、さらには、それらに一要素のみ、それ以上、あるいはそれ以下、を含む他の組み合わせや形態をも、本開示の範疇や思想範囲に入るものである。
11~16 第1~第6レーザ光源
20、40 導波路
21~26 第1~第6導波路
30 波長合波器
50 ビーム偏向器
Claims (4)
- 波長の変化によってレーザビームを偏向させるビーム偏向器(50)と、
2つの異なる中心波長の切り替えが可能な複数のレーザ光源(10)と、
前記複数のレーザ光源から出射されるレーザ光を合波させ、前記ビーム偏向器へ入力する波長合波器(30)と、を有し、
前記複数のレーザ光源は、2つの異なる中心波長の切り替えが可能なレーザ光源をM種備えていると共に、M種それぞれの前記レーザ光源を2組ずつ備えており、
前記波長合波器は、前記2組のM種の前記レーザ光源から出射されるレーザ光を合波させて前記ビーム偏向器へ入力し、
前記2組のM種のレーザ光源のN番目(1≦N≦M) のレーザ光源の中心波長をλNとλN+Mとしたとき、
λ1<λ2<・・・<λN<・・・<λM<・・・<λN+M<・・・<λ2M
を満たしているビーム偏向システム。 - 前記レーザ光源のレーザ利得媒体のゲインの波長依存性が極大値を2つ持つ、請求項1に記載のビーム偏向システム。
- 前記レーザ光源の中心波長λ1~λMがレーザ利得媒体の励起準位による発振、かつ、中心波長λM+1~λ2Mがレーザ利得媒体の基底準位による発振である請求項1または2に記載のビーム偏向システム。
- 前記レーザ光源のうちレーザ利得媒体に量子ドット構造を用いている請求項1乃至3のいずれか1つに記載のビーム偏向システム。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020092384A JP7468148B2 (ja) | 2020-05-27 | 2020-05-27 | ビーム偏向システム |
US17/319,230 US20210373350A1 (en) | 2020-05-27 | 2021-05-13 | Beam deflection system |
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JP2020092384A JP7468148B2 (ja) | 2020-05-27 | 2020-05-27 | ビーム偏向システム |
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JP2021189243A JP2021189243A (ja) | 2021-12-13 |
JP7468148B2 true JP7468148B2 (ja) | 2024-04-16 |
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JP2020092384A Active JP7468148B2 (ja) | 2020-05-27 | 2020-05-27 | ビーム偏向システム |
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JP (1) | JP7468148B2 (ja) |
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JP2022078795A (ja) * | 2020-11-13 | 2022-05-25 | 株式会社デンソー | 半導体レーザ装置 |
Citations (1)
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WO2018003852A1 (ja) | 2016-06-30 | 2018-01-04 | 国立大学法人横浜国立大学 | 光偏向デバイスおよびライダー装置 |
Family Cites Families (3)
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JP3290472B2 (ja) * | 1992-08-21 | 2002-06-10 | キヤノン株式会社 | 光磁気記録再生装置 |
US10243328B2 (en) * | 2013-11-20 | 2019-03-26 | Elenion Technologies, Llc | Semiconductor laser |
US9525269B2 (en) * | 2014-11-22 | 2016-12-20 | TeraDiode, Inc. | Wavelength beam combining laser systems utilizing etalons |
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- 2020-05-27 JP JP2020092384A patent/JP7468148B2/ja active Active
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- 2021-05-13 US US17/319,230 patent/US20210373350A1/en active Pending
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WO2018003852A1 (ja) | 2016-06-30 | 2018-01-04 | 国立大学法人横浜国立大学 | 光偏向デバイスおよびライダー装置 |
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JP2021189243A (ja) | 2021-12-13 |
US20210373350A1 (en) | 2021-12-02 |
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