JP7464766B2 - 半導体レーザ - Google Patents
半導体レーザ Download PDFInfo
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- JP7464766B2 JP7464766B2 JP2023017581A JP2023017581A JP7464766B2 JP 7464766 B2 JP7464766 B2 JP 7464766B2 JP 2023017581 A JP2023017581 A JP 2023017581A JP 2023017581 A JP2023017581 A JP 2023017581A JP 7464766 B2 JP7464766 B2 JP 7464766B2
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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- H01S5/02—Structural details or components not essential to laser action
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- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
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- H01S5/00—Semiconductor lasers
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- H01S5/00—Semiconductor lasers
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- H01S5/00—Semiconductor lasers
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
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- H01S5/00—Semiconductor lasers
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
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- H01S5/00—Semiconductor lasers
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- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
- H01S5/4093—Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
21 キャリア
22 レーザダイオード
23 ファセット
24 放射出口領域
25 光学素子
26 接続部材
27 成形体
28 さらなるレーザダイオード
29 ビームコンバイナ
30 変換素子
31 接続キャリア
32 基板
33 ボンディングワイヤ
34 ESD素子
35 放射入口側
36 放射出口側
37 上面
38 電気接点
39 側面
40 ミラー層
41 貫通接続部
42 監視ダイオード
43 放射出口面
44 下側
x 横方向
Claims (10)
- キャリア(21)と、
前記キャリア(21)上に配置され、レーザ放射を発生させるための活性領域および放射出口領域(24)を伴うファセット(23)を有するエッジ発光レーザダイオード(22)と、
前記ファセット(23)を覆う光学素子(25)と、
前記光学素子(25)および前記ファセット(23)の間に配置される接続部材(26)と、
前記レーザダイオード(22)および前記光学素子(25)を少なくとも部分的に覆う成形体(27)と、
を備える、半導体レーザ(20)であって、
前記光学素子(25)は、動作中に前記レーザダイオード(22)によって出射されるレーザ放射に対して少なくとも部分的に透過性であり、
前記光学素子(25)は、動作中に前記光学素子(25)に入射するレーザ放射の主伝搬方向を変化させるように構成され、
前記光学素子(25)の放射出口側(36)に光触媒作用層が適用され、前記放射出口側(36)での分解反応を支援し、
前記半導体レーザ(20)が、
それぞれがキャリア(21)上に配置された2つのさらなるエッジ発光レーザダイオード(28)と、
ビームコンバイナ(29)と、
をさらに備える、
半導体レーザ(20)。 - 前記成形体(27)は、前記レーザダイオード(22)を少なくとも片側上で完全に覆う、請求項1に記載の半導体レーザ(20)。
- 前記レーザダイオード(22)の主放射方向は、前記半導体レーザ(20)の前記主放射方向に対して横方向または直交方向である、請求項1から2のいずれか一項に記載の半導体レーザ(20)。
- 前記キャリア(21)は、少なくとも部分的に前記成形体(27)によって横方向(x)に取り囲まれており、前記横方向(x)は、前記キャリア(21)の主延長面と平行である、請求項1から3のいずれか一項に記載の半導体レーザ(20)。
- 前記成形体(27)から開放された放射出口面(43)を有する、請求項1から4のいずれか一項に記載の半導体レーザ(20)。
- 前記光学素子(25)は、前記ファセット(23)を完全に覆う、請求項1から5のいずれか一項に記載の半導体レーザ(20)。
- 前記光学素子(25)の前記放射出口領域(24)に面する側に反射防止層が適用されている、請求項1から6のいずれか一項に記載の半導体レーザ(20)。
- 前記光学素子(25)は、反射防止層がさらに適用された放射出口側(36)を有する、請求項1~7のいずれか一項に記載の半導体レーザ(20)。
- 前記光学素子(25)は、動作中に前記光学素子(25)に入射する前記レーザ放射を整形するように設計されている、請求項1から8のいずれか一項に記載の半導体レーザ(20)。
- 前記光学素子(25)に、動作中に前記レーザダイオード(22)によって出射される前記放射の波長を変換するように設計された変換素子(30)が続く、請求項1から9のいずれか一項に記載の半導体レーザ(20)。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2024053726A JP2024081740A (ja) | 2018-07-19 | 2024-03-28 | 半導体レーザ |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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DE102018117518.3 | 2018-07-19 | ||
DE102018117518.3A DE102018117518A1 (de) | 2018-07-19 | 2018-07-19 | Halbleiterlaser |
PCT/EP2019/069027 WO2020016185A1 (de) | 2018-07-19 | 2019-07-15 | Halbleiterlaser |
JP2021500223A JP7225369B2 (ja) | 2018-07-19 | 2019-07-15 | 半導体レーザ |
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JP2021500223A Division JP7225369B2 (ja) | 2018-07-19 | 2019-07-15 | 半導体レーザ |
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JP2024053726A Division JP2024081740A (ja) | 2018-07-19 | 2024-03-28 | 半導体レーザ |
Publications (2)
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JP2023053027A JP2023053027A (ja) | 2023-04-12 |
JP7464766B2 true JP7464766B2 (ja) | 2024-04-09 |
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JP2021500223A Active JP7225369B2 (ja) | 2018-07-19 | 2019-07-15 | 半導体レーザ |
JP2023017581A Active JP7464766B2 (ja) | 2018-07-19 | 2023-02-08 | 半導体レーザ |
JP2024053726A Pending JP2024081740A (ja) | 2018-07-19 | 2024-03-28 | 半導体レーザ |
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Country Status (6)
Country | Link |
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US (2) | US11749959B2 (ja) |
JP (3) | JP7225369B2 (ja) |
KR (2) | KR20230056069A (ja) |
CN (1) | CN112567579A (ja) |
DE (1) | DE102018117518A1 (ja) |
WO (1) | WO2020016185A1 (ja) |
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---|---|---|---|---|
DE102017123798B4 (de) * | 2017-10-12 | 2022-03-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaser und Herstellungsverfahren für optoelektronische Halbleiterbauteile |
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