JP2021530113A - 半導体レーザ - Google Patents
半導体レーザ Download PDFInfo
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- JP2021530113A JP2021530113A JP2021500223A JP2021500223A JP2021530113A JP 2021530113 A JP2021530113 A JP 2021530113A JP 2021500223 A JP2021500223 A JP 2021500223A JP 2021500223 A JP2021500223 A JP 2021500223A JP 2021530113 A JP2021530113 A JP 2021530113A
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- H01S5/00—Semiconductor lasers
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
21 キャリア
22 レーザダイオード
23 ファセット
24 放射出口領域
25 光学素子
26 接続部材
27 成形体
28 さらなるレーザダイオード
29 ビームコンバイナ
30 変換素子
31 接続キャリア
32 基板
33 ボンディングワイヤ
34 ESD素子
35 放射入口側
36 放射出口側
37 上面
38 電気接点
39 側面
40 ミラー層
41 貫通接続部
42 監視ダイオード
43 放射出口面
44 下側
x 横方向
Claims (14)
- − キャリア(21)と、
− 前記キャリア(21)上に配置され、レーザ放射を発生させるための活性領域および放射出口領域(24)を伴うファセット(23)を有するエッジ発光レーザダイオード(22)と、
− 前記ファセット(23)を覆う光学素子(25)と、
− 前記光学素子(25)および前記ファセット(23)の間に配置される接続部材(26)と、
− 前記レーザダイオード(22)および前記光学素子(25)を少なくとも部分的に覆う成形体(27)と、
を備え、
− 前記光学素子(25)は、動作中に前記レーザダイオード(22)によって出射されるレーザ放射に対して少なくとも部分的に透過性であり、
− 前記光学素子(25)は、動作中に前記光学素子(25)に入射するレーザ放射の主伝搬方向を変化させるように構成される、
半導体レーザ(20)。 - 前記成形体(27)は、前記レーザダイオード(22)を少なくとも片側上で完全に覆う、請求項1に記載の半導体レーザ(20)。
- 前記レーザダイオード(22)の主放射方向は、前記半導体レーザ(20)の前記主放射方向に対して横方向または直交方向である、請求項1から2のいずれか一項に記載の半導体レーザ(20)。
- 前記キャリア(21)は、少なくとも部分的に前記成形体(27)によって横方向(x)に取り囲まれており、前記横方向(x)は、前記キャリア(21)の主延長面と平行である、請求項1から3のいずれか一項に記載の半導体レーザ(20)。
- 前記成形体(27)は、鋳造及び/又は射出成形によって形成されている、請求項1から4のいずれか一項に記載の半導体レーザ(20)。
- 前記成形体(27)から開放された放射出口面(43)を有する、請求項1から5のいずれか一項に記載の半導体レーザ(20)。
- 前記光学素子(25)は、前記ファセット(23)を完全に覆う、請求項1から6のいずれか一項に記載の半導体レーザ(20)。
- 前記光学素子(25)の前記放射出口領域(24)に面する側に反射防止層が適用されている、請求項1から7のいずれか一項に記載の半導体レーザ(20)。
- 前記光学素子(25)は、反射防止層がさらに適用された放射出口側(36)を有する、請求項1〜8のいずれか一項に記載の半導体レーザ(20)。
- 前記光学素子(25)の前記放射出口側(36)に光触媒作用層が適用され、前記放射出口側(36)での分解反応を支援する、請求項9に記載の半導体レーザ(20)。
- 前記光学素子(25)は、動作中に前記光学素子(25)に入射する前記レーザ放射を整形するように設計されている、請求項1から10のいずれか一項に記載の半導体レーザ(20)。
- それぞれがキャリア(21)上に配置された2つのさらなるエッジ発光レーザダイオード(28)を備える、請求項1から11のいずれか一項に記載の半導体レーザ(20)。
- ビームコンバイナ(29)を備える、請求項12に記載の半導体レーザ(20)。
- 前記光学素子(25)に、動作中に前記レーザダイオード(22)によって出射される前記放射の波長を変換するように設計された変換素子(30)が続く、請求項1から13のいずれか一項に記載の半導体レーザ(20)。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2023017581A JP7464766B2 (ja) | 2018-07-19 | 2023-02-08 | 半導体レーザ |
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Application Number | Priority Date | Filing Date | Title |
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DE102018117518.3A DE102018117518A1 (de) | 2018-07-19 | 2018-07-19 | Halbleiterlaser |
DE102018117518.3 | 2018-07-19 | ||
PCT/EP2019/069027 WO2020016185A1 (de) | 2018-07-19 | 2019-07-15 | Halbleiterlaser |
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JP2023017581A Division JP7464766B2 (ja) | 2018-07-19 | 2023-02-08 | 半導体レーザ |
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JP2021530113A true JP2021530113A (ja) | 2021-11-04 |
JP7225369B2 JP7225369B2 (ja) | 2023-02-20 |
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JP2023017581A Active JP7464766B2 (ja) | 2018-07-19 | 2023-02-08 | 半導体レーザ |
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US (2) | US11749959B2 (ja) |
JP (2) | JP7225369B2 (ja) |
KR (2) | KR102525067B1 (ja) |
CN (1) | CN112567579A (ja) |
DE (1) | DE102018117518A1 (ja) |
WO (1) | WO2020016185A1 (ja) |
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DE102017123798B4 (de) * | 2017-10-12 | 2022-03-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaser und Herstellungsverfahren für optoelektronische Halbleiterbauteile |
DE102020127450A1 (de) * | 2020-10-19 | 2022-04-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements |
DE102020133174A1 (de) * | 2020-12-11 | 2022-06-15 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaser und verfahren zur herstellung eines halbleiterlasers |
DE102021113604A1 (de) * | 2021-05-26 | 2022-12-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlung emittierende vorrichtung, messsystem und fahrzeug mit messsystem |
DE102021118354A1 (de) * | 2021-07-15 | 2023-01-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verkapselung von seitenemittierenden laserpackages mittels vacuum injection molding |
DE102022106941A1 (de) | 2022-03-24 | 2023-09-28 | Ams-Osram International Gmbh | Optoelektronisches halbleiterlaserbauelement |
US20230387650A1 (en) * | 2022-04-15 | 2023-11-30 | Senko Advanced Components, Inc. | Laser beam module package incorporating stamped metal freeform reflective optics |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0414888A (ja) * | 1990-05-08 | 1992-01-20 | Rohm Co Ltd | レーザダイオード |
JPH04320386A (ja) * | 1991-04-19 | 1992-11-11 | Rohm Co Ltd | 半導体レーザ装置 |
JPH05175360A (ja) * | 1991-12-25 | 1993-07-13 | Fuji Electric Co Ltd | 樹脂封止電子部品 |
US20030007257A1 (en) * | 2001-07-06 | 2003-01-09 | Bell Bernard W. | Facial contact lens system for laser diode |
JP2003101118A (ja) * | 2001-09-25 | 2003-04-04 | Sharp Corp | 光伝送モジュール |
JP2006145781A (ja) * | 2004-11-18 | 2006-06-08 | Oki Electric Ind Co Ltd | 偏向光学素子及びその製造方法並びに光学装置 |
JP2006276736A (ja) * | 2005-03-30 | 2006-10-12 | Kyocera Corp | 光レセプタクル及びそれを用いた光モジュール |
JP2009025458A (ja) * | 2007-07-18 | 2009-02-05 | Sumitomo Electric Ind Ltd | 光モジュール |
JP2012109201A (ja) * | 2010-10-29 | 2012-06-07 | Sharp Corp | 発光装置、車両用前照灯、照明装置およびレーザ素子 |
JP2016218327A (ja) * | 2015-05-22 | 2016-12-22 | 日立金属株式会社 | 光送信モジュール、光送受信モジュール及び光モジュール基板 |
JP2018037440A (ja) * | 2016-08-29 | 2018-03-08 | 日亜化学工業株式会社 | 半導体レーザ装置の製造方法及び半導体レーザ装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2101074T3 (es) * | 1992-10-14 | 1997-07-01 | Ibm | Diodo emisor de luz encapsulado y metodo para encapsular el mismo. |
DE29624438U1 (de) * | 1996-04-27 | 2003-10-23 | Bosch Gmbh Robert | Optische Baugruppe zur Ankopplung eines Lichtwellenleiters |
JP2003059087A (ja) | 2001-08-15 | 2003-02-28 | Sony Corp | 光学素子、半導体レーザ、光検出器、光学ヘッドおよび光ディスク再生装置 |
US6998691B2 (en) * | 2003-09-19 | 2006-02-14 | Agilent Technologies, Inc. | Optoelectronic device packaging with hermetically sealed cavity and integrated optical element |
US20130250403A1 (en) * | 2012-03-22 | 2013-09-26 | Palo Alto Research Center Incorporated | High infrared transmission window with self cleaning hydrophilic surface |
JP5730814B2 (ja) * | 2012-05-08 | 2015-06-10 | 古河電気工業株式会社 | 半導体レーザモジュール |
DE102015208704A1 (de) | 2015-05-11 | 2016-11-17 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
US10938182B2 (en) * | 2015-08-19 | 2021-03-02 | Soraa Laser Diode, Inc. | Specialized integrated light source using a laser diode |
US20170146793A1 (en) * | 2015-11-20 | 2017-05-25 | Innovative Micro Technology | Microfabricated optical apparatus with integrated turning surface |
JP6650511B2 (ja) * | 2016-03-31 | 2020-02-19 | シャープ株式会社 | アイセーフ光源、およびその製造方法 |
US10050409B2 (en) * | 2016-09-22 | 2018-08-14 | Innovative Micro Technology | Microfabricated optical apparatus with grounded metal layer |
DE102017123798B4 (de) | 2017-10-12 | 2022-03-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaser und Herstellungsverfahren für optoelektronische Halbleiterbauteile |
-
2018
- 2018-07-19 DE DE102018117518.3A patent/DE102018117518A1/de active Pending
-
2019
- 2019-07-15 KR KR1020217003723A patent/KR102525067B1/ko active IP Right Grant
- 2019-07-15 CN CN201980048075.8A patent/CN112567579A/zh active Pending
- 2019-07-15 JP JP2021500223A patent/JP7225369B2/ja active Active
- 2019-07-15 US US17/261,300 patent/US11749959B2/en active Active
- 2019-07-15 KR KR1020237013165A patent/KR20230056069A/ko not_active Application Discontinuation
- 2019-07-15 WO PCT/EP2019/069027 patent/WO2020016185A1/de active Application Filing
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2023
- 2023-02-08 JP JP2023017581A patent/JP7464766B2/ja active Active
- 2023-07-20 US US18/355,572 patent/US20240030677A1/en active Pending
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0414888A (ja) * | 1990-05-08 | 1992-01-20 | Rohm Co Ltd | レーザダイオード |
JPH04320386A (ja) * | 1991-04-19 | 1992-11-11 | Rohm Co Ltd | 半導体レーザ装置 |
JPH05175360A (ja) * | 1991-12-25 | 1993-07-13 | Fuji Electric Co Ltd | 樹脂封止電子部品 |
US20030007257A1 (en) * | 2001-07-06 | 2003-01-09 | Bell Bernard W. | Facial contact lens system for laser diode |
JP2003101118A (ja) * | 2001-09-25 | 2003-04-04 | Sharp Corp | 光伝送モジュール |
JP2006145781A (ja) * | 2004-11-18 | 2006-06-08 | Oki Electric Ind Co Ltd | 偏向光学素子及びその製造方法並びに光学装置 |
JP2006276736A (ja) * | 2005-03-30 | 2006-10-12 | Kyocera Corp | 光レセプタクル及びそれを用いた光モジュール |
JP2009025458A (ja) * | 2007-07-18 | 2009-02-05 | Sumitomo Electric Ind Ltd | 光モジュール |
JP2012109201A (ja) * | 2010-10-29 | 2012-06-07 | Sharp Corp | 発光装置、車両用前照灯、照明装置およびレーザ素子 |
JP2016218327A (ja) * | 2015-05-22 | 2016-12-22 | 日立金属株式会社 | 光送信モジュール、光送受信モジュール及び光モジュール基板 |
JP2018037440A (ja) * | 2016-08-29 | 2018-03-08 | 日亜化学工業株式会社 | 半導体レーザ装置の製造方法及び半導体レーザ装置 |
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JP2023053027A (ja) | 2023-04-12 |
CN112567579A (zh) | 2021-03-26 |
US20210281041A1 (en) | 2021-09-09 |
US20240030677A1 (en) | 2024-01-25 |
JP7225369B2 (ja) | 2023-02-20 |
DE102018117518A1 (de) | 2020-01-23 |
KR20230056069A (ko) | 2023-04-26 |
KR20210024176A (ko) | 2021-03-04 |
KR102525067B1 (ko) | 2023-04-21 |
US11749959B2 (en) | 2023-09-05 |
WO2020016185A1 (de) | 2020-01-23 |
JP7464766B2 (ja) | 2024-04-09 |
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