JP7458330B2 - 半導体素子 - Google Patents
半導体素子 Download PDFInfo
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- JP7458330B2 JP7458330B2 JP2020571211A JP2020571211A JP7458330B2 JP 7458330 B2 JP7458330 B2 JP 7458330B2 JP 2020571211 A JP2020571211 A JP 2020571211A JP 2020571211 A JP2020571211 A JP 2020571211A JP 7458330 B2 JP7458330 B2 JP 7458330B2
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- 239000004065 semiconductor Substances 0.000 title claims description 107
- 230000003287 optical effect Effects 0.000 claims description 30
- 239000011810 insulating material Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 9
- 230000006866 deterioration Effects 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 7
- 239000012212 insulator Substances 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000011800 void material Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02453—Heating, e.g. the laser is heated for stabilisation against temperature fluctuations of the environment
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2213—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on polyimide or resin
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
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- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1007—Branched waveguides
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1021—Coupled cavities
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
- H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
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- Physics & Mathematics (AREA)
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- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Geometry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
Description
図1は、実施形態1に係る半導体素子の模式図である。この半導体素子10は、基板11と、メサ部12と、延在部13a,13bとを備えている。
図3は、実施形態2に係る半導体素子の模式図であり、半導体素子を上面視した図である。図4は、実施形態2に係る半導体素子の模式図であり、半導体素子の断面斜視図である。この半導体素子20は、基板21と、メサ部22と、2つの延在部23と、2つの絶縁部25と、ヒータ27と、2つの配線部28aと、2つの電極パッド28bと、2つの接続部29と、を備えている。延在部23は、それぞれ、メサ部22の幅方向両側のそれぞれに設けられたトレンチ溝24を隔てて、メサ部22に沿って延在する。絶縁部25は、それぞれ、トレンチ溝24に設けられている。絶縁部25は、それぞれ、メサ部22に密着するとともに、メサ部22の延伸方向における全体において、延在部23との間に空隙26が形成されている。ヒータ27は、メサ部22と、2つの絶縁部25の両方とにわたって設けられている。
図5は、実施形態3に係る半導体素子の模式図である。この半導体素子100は、特許文献2に開示されるようなバーニア効果を利用した波長可変型の半導体レーザ素子として構成されている。半導体素子100は、共通の基板上に集積された半導体素子30,40,50,60,70を備えている。なお、図5では、後述する各ヒータや電極、および各ヒータや電極に電流を供給するための配線部や電極パッドは図示を省略している。
11,21 基板
12,22,32,52,62,72 メサ部
12a 光導波層
13a,13b,23,103a,103b,103c 延在部
14a,14b,24,34,104a,104b,104c,104d,104e トレンチ溝
15a,15b,15c,25,35,105a,105b,105c,105d,105e 絶縁部
16a,16b,26,36,106a,106b,106c,106d,106e 空隙
17,27,37,67,77 ヒータ
18,28a 配線部
28b 電極パッド
29 接続部
Claims (9)
- 半導体積層構造を有し、所定方向に延伸するメサ部と、
前記メサ部の両側のそれぞれ設けられたトレンチ溝を隔てて、前記メサ部に沿って延在する延在部と、
絶縁性材料からなり、前記トレンチ溝のそれぞれに設けられた絶縁部と、
前記メサ部の上側に設けられた導電部と、を備え、
前記絶縁部の少なくとも1つは、前記メサ部に密着し、かつ前記メサ部の延伸方向における少なくとも一部において、前記延在部との間に空隙が形成されており、
前記少なくとも1つの絶縁部と前記メサ部とにわたって前記導電部が設けられ、
前記少なくとも1つの絶縁部の一部の絶縁部は、前記少なくとも1つの絶縁部において前記延在部との間に前記空隙が形成されていない部分を構成している
ことを特徴とする半導体素子。 - 前記導電部の前記少なくとも1つの絶縁部にわたっている側の端は、前記少なくとも1つの絶縁部の端よりも前記メサ部の側に位置する
ことを特徴とする請求項1に記載の半導体素子。 - 前記空隙の幅は2μm以上である
ことを特徴とする請求項1または2に記載の半導体素子。 - 前記空隙の幅は前記トレンチ溝の幅の80%以下である
ことを特徴とする請求項1~3のいずれか一つに記載の半導体素子。 - 前記メサ部は光導波領域を有する
ことを特徴とする請求項1~4のいずれか一つに記載の半導体素子。 - 前記導電部はヒータである
ことを特徴とする請求項1~5のいずれか一つに記載の半導体素子。 - 前記少なくとも1つの絶縁部は、前記メサ部の延伸方向における全体において、前記延在部との間に空隙が形成されている
ことを特徴とする請求項1~6のいずれか一つに記載の半導体素子。 - 前記少なくとも1つの絶縁部の、前記延在部との間に空隙が形成されていない部分において、前記延在部から前記少なくとも1つの絶縁部とわたって前記導電部に到達し、前記導電部と電気的に接続する配線部をさらに備える
ことを特徴とする請求項1~6のいずれか一つに記載の半導体素子。 - 半導体レーザ素子である
ことを特徴とする請求項1~8のいずれか一つに記載の半導体素子。
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JP2019021914 | 2019-02-08 | ||
JP2019021914 | 2019-02-08 | ||
PCT/JP2020/004099 WO2020162447A1 (ja) | 2019-02-08 | 2020-02-04 | 半導体素子 |
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Citations (8)
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CN1756010A (zh) | 2004-09-29 | 2006-04-05 | 中国科学院半导体研究所 | 半绝缘衬底长波长半导体激光器及其制作方法 |
JP2011175216A (ja) | 2010-02-25 | 2011-09-08 | Nec Corp | 半導体光素子、半導体マッハツェンダー型光変調器および半導体光素子の製造方法 |
JP2015012176A (ja) | 2013-06-28 | 2015-01-19 | 住友電工デバイス・イノベーション株式会社 | 光半導体装置及びその製造方法 |
JP2015197642A (ja) | 2014-04-02 | 2015-11-09 | 日本電信電話株式会社 | 半導体デバイス、および半導体デバイスの製造方法 |
JP2015216318A (ja) | 2014-05-13 | 2015-12-03 | 住友電気工業株式会社 | 半導体光集積素子 |
JP2016054168A (ja) | 2014-09-02 | 2016-04-14 | 住友電気工業株式会社 | 半導体素子及び半導体素子の製造方法 |
WO2016154372A1 (en) | 2015-03-26 | 2016-09-29 | Mellanox Technologies Silicon Photonics Inc. | Control of thermal energy in optical devices |
WO2017135436A1 (ja) | 2016-02-04 | 2017-08-10 | 古河電気工業株式会社 | 光素子及びその製造方法、並びに光変調器 |
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JP2012174938A (ja) * | 2011-02-22 | 2012-09-10 | Sumitomo Electric Ind Ltd | 光半導体素子およびその製造方法 |
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- 2020-02-04 CN CN202080012827.8A patent/CN113396512A/zh active Pending
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1756010A (zh) | 2004-09-29 | 2006-04-05 | 中国科学院半导体研究所 | 半绝缘衬底长波长半导体激光器及其制作方法 |
JP2011175216A (ja) | 2010-02-25 | 2011-09-08 | Nec Corp | 半導体光素子、半導体マッハツェンダー型光変調器および半導体光素子の製造方法 |
JP2015012176A (ja) | 2013-06-28 | 2015-01-19 | 住友電工デバイス・イノベーション株式会社 | 光半導体装置及びその製造方法 |
JP2015197642A (ja) | 2014-04-02 | 2015-11-09 | 日本電信電話株式会社 | 半導体デバイス、および半導体デバイスの製造方法 |
JP2015216318A (ja) | 2014-05-13 | 2015-12-03 | 住友電気工業株式会社 | 半導体光集積素子 |
JP2016054168A (ja) | 2014-09-02 | 2016-04-14 | 住友電気工業株式会社 | 半導体素子及び半導体素子の製造方法 |
WO2016154372A1 (en) | 2015-03-26 | 2016-09-29 | Mellanox Technologies Silicon Photonics Inc. | Control of thermal energy in optical devices |
WO2017135436A1 (ja) | 2016-02-04 | 2017-08-10 | 古河電気工業株式会社 | 光素子及びその製造方法、並びに光変調器 |
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WO2020162447A1 (ja) | 2020-08-13 |
CN113396512A (zh) | 2021-09-14 |
US20210367405A1 (en) | 2021-11-25 |
JPWO2020162447A1 (ja) | 2021-12-09 |
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