JP7453283B2 - 半導体基板、太陽電池及び太陽光発電モジュール - Google Patents
半導体基板、太陽電池及び太陽光発電モジュール Download PDFInfo
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- JP7453283B2 JP7453283B2 JP2022113517A JP2022113517A JP7453283B2 JP 7453283 B2 JP7453283 B2 JP 7453283B2 JP 2022113517 A JP2022113517 A JP 2022113517A JP 2022113517 A JP2022113517 A JP 2022113517A JP 7453283 B2 JP7453283 B2 JP 7453283B2
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- 239000000758 substrate Substances 0.000 title claims description 103
- 239000004065 semiconductor Substances 0.000 title claims description 91
- 238000002161 passivation Methods 0.000 claims description 53
- 239000011800 void material Substances 0.000 claims description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 18
- 230000005684 electric field Effects 0.000 claims description 15
- 238000009826 distribution Methods 0.000 claims description 8
- 230000005496 eutectics Effects 0.000 claims description 7
- 238000010248 power generation Methods 0.000 claims description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 239000002002 slurry Substances 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 15
- 238000013461 design Methods 0.000 description 15
- 239000010408 film Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000001878 scanning electron micrograph Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000003685 thermal hair damage Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000005022 packaging material Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Description
前記第1非ピラミッド状テクスチャー構造の頂部表面と前記第2非ピラミッド状テクスチャー構造の頂部表面とは、何れも多角形平面であり、且つ前記第1非ピラミッド状テクスチャー構造の頂部表面の1次元サイズは、前記第2非ピラミッド状テクスチャー構造の頂部表面の1次元サイズよりも小さく、
前記第1非ピラミッド状テクスチャー構造の頂部表面の1次元サイズは、5μm以上であり、且つ12μm以下であり、前記第2非ピラミッド状テクスチャー構造の頂部表面の1次元サイズは、10μm以上であり、且つ40μm以下である。
前記少なくとも部分的に積載された2つ以上の第1サブ構造のうち、前記後面から離間し且つ前記後面に垂直な方向における最外側の前記第1サブ構造の頂部表面の1次元サイズは、5μm以上であり、且つ12μm以下であり、
前記後面から離間する前記第2サブ構造の頂部表面の1次元サイズは、5μm以上であり、且つ12μm以下である。
前記少なくとも部分的に積載された2つ以上の第3サブ構造のうち、前記後面から離間し且つ前記後面に垂直な方向における最外側の前記第3サブ構造の頂部表面の1次元サイズは、10μm以上であり、且つ40μm以下であり、
前記後面から離間する前記第4サブ構造の頂部表面の1次元サイズは、10μm以上であり、且つ40μm以下である。
上記半導体基板と、
前記半導体基板の後面のN型導電領域に設けられるトンネル酸化層と、
前記半導体基板の後面のP型導電領域に設けられる局所裏面電界と、
前記トンネル酸化層の前記半導体基板から離反する側に設けられる多結晶シリコン薄膜層と、
前記局所裏面電界に設けられる共晶層と、
前記多結晶シリコン薄膜層の前記トンネル酸化層から離反する側と前記P型導電領域とに設けられる後面パッシベーション層と、
前記後面パッシベーション層を通り抜けて前記局所裏面電界とのオーム接触を形成する第1電極と、
前記後面パッシベーション層と前記多結晶シリコン薄膜層とを順次通り抜けてオーム接触を形成する第2電極と、を備える。
本発明の半導体基板の後面がN型導電領域及びP型導電領域を有し、N型導電領域に第1非ピラミッド状テクスチャー構造が設けられ、P型導電領域に第2非ピラミッド状テクスチャー構造が設けられ、第1非ピラミッド状テクスチャー構造の頂部表面と前記第2非ピラミッド状テクスチャー構造の頂部表面とが何れも多角形平面であり、且つ第1非ピラミッド状テクスチャー構造の頂部表面の1次元サイズが第2非ピラミッド状テクスチャー構造の頂部表面の1次元サイズよりも小さいと限定し、且つ第1非ピラミッド状テクスチャー構造の頂部表面の1次元サイズ範囲と第2非ピラミッド状テクスチャー構造の頂部表面の1次元サイズ範囲とを更に限定する。本発明では、N型導電タイプドーピング及びP型導電タイプドーピングのドーピング特性について、異なるサイズの非ピラミッド状テクスチャー構造を対応的に設計し、より対応性のあるように該当領域のパッシベーション品質を高め、スラリーとの間の接触特徴を向上させ、作製された太陽電池がより高い電池変換効率を得ることができる。
前記第1非ピラミッド状テクスチャー構造111の頂部表面と前記第2非ピラミッド状テクスチャー構造121の頂部表面とは、何れも多角形平面であり、且つ前記第1非ピラミッド状テクスチャー構造111の頂部表面の1次元サイズL1は、前記第2非ピラミッド状テクスチャー構造121の頂部表面の1次元サイズL2よりも小さく、
前記第1非ピラミッド状テクスチャー構造111の頂部表面の1次元サイズL1は、5μm以上であり、且つ12μm以下であり、前記第2非ピラミッド状テクスチャー構造121の頂部表面の1次元サイズL2は、10μm以上であり、且つ40μm以下である。
前記少なくとも部分的に積載された2つ以上の第1サブ構造1111のうち、前記後面から離間し且つ前記後面に垂直な方向における最外側の前記第1サブ構造1111の頂部表面の1次元サイズL11は、5μm以上であり、且つ12μm以下であり、
前記後面から離間する前記第2サブ構造1112の頂部表面の1次元サイズL12は、5μm以上であり、且つ12μm以下である。
前記少なくとも部分的に積載された2つ以上の第3サブ構造1211のうち、前記後面から離間し且つ前記後面に垂直な方向における最外側の前記第3サブ構造1211の頂部表面の1次元サイズは、10μm以上であり、且つ40μm以下であり、
前記後面から離間する前記第4サブ構造1212の頂部表面の1次元サイズは、10μm以上であり、且つ40μm以下である。
半導体基板1は、単結晶シリコン基板、多結晶シリコン基板、微結晶シリコン基板又は炭化ケイ素基板のうちの一種であってもよい。幾つかの実施例において、前記半導体基板は、P型結晶シリコン基板である。
前記半導体基板1の前面に設けられ且つ前記半導体基板1から離間する方向に順次積層設置された前面パッシベーション層9と反射防止層10とを更に備える。前面パッシベーション層9は、半導体基板1の前面に対してパッシベーション作用を果たし、前面パッシベーション層9は、1層又は複数層のパッシベーション層によって構成されてもよい。前面パッシベーション層9は、酸化アルミニウム、窒化ケイ素、酸化ケイ素、酸窒化ケイ素、炭素ドープ酸窒化ケイ素層等のパッシベーション層を含んでもよい。幾つかの具体的な実施例において、前面パッシベーション層9は、酸化アルミニウム層であってもよい。反射防止層10は、光の反射を防止したり減少したりすることができ、太陽エネルギーを十分に利用する目的を果たすことができる。反射防止層10は、化学蒸着法、物理蒸着法及び高温窒化等の方法によって前面パッシベーション層9に形成されてもよい。幾つかの具体的な実施例において、反射防止層10は、酸窒化ケイ素層であってもよい。
比較例は、太陽電池を提供する。太陽電池は、半導体基板を備え、前記半導体基板の後面は、N型導電領域及びP型導電領域を有し、前記N型導電領域と前記P型導電領域とには、同じ非ピラミッド状テクスチャー構造が設けられている。
11-N型導電領域
111-第1非ピラミッド状テクスチャー構造
1111-第1サブ構造
1112-第2サブ構造
12-P型導電領域
121-第2非ピラミッド状テクスチャー構造
1211-第3サブ構造
1212-第4サブ構造
13-境界線
131-ボイド
2-トンネル酸化層
3-局所裏面電界
4-多結晶シリコン薄膜層
5-共晶層
6-後面パッシベーション層
61-第1後面パッシベーション層
62-第2後面パッシベーション層
7-第1電極
8-第2電極
9-前面パッシベーション層
10-反射防止層
Claims (11)
- 半導体基板であって、
前記半導体基板の後面は、N型導電領域及びP型導電領域を有し、前記N型導電領域には、第1非ピラミッド状テクスチャー構造が設けられ、前記P型導電領域には、第2非ピラミッド状テクスチャー構造が設けられ、
前記第1非ピラミッド状テクスチャー構造の頂部表面と前記第2非ピラミッド状テクスチャー構造の頂部表面とは、何れも多角形平面であり、且つ前記第1非ピラミッド状テクスチャー構造の頂部表面の1次元サイズは、前記第2非ピラミッド状テクスチャー構造の頂部表面の1次元サイズよりも小さく、
前記第1非ピラミッド状テクスチャー構造の頂部表面の1次元サイズは、7μm以上であり、且つ10μm以下であり、前記第2非ピラミッド状テクスチャー構造の頂部表面の1次元サイズは、15μm以上であり、且つ35μm以下であり、
非ピラミッド状は、ピラミッド状微細構造の塔端が破壊されて形成された塔基、四角台状又は階段状の形態であり、前記1次元サイズは、前記多角形平面の対角線長さであり、
前記N型導電領域と前記P型導電領域との間には、境界線があり、前記N型導電領域及び/又は前記P型導電領域の前記境界線に近接する位置には、ボイドが設けられ、
隣接する2つの前記N型導電領域の間の間隔又は隣接する2つの前記P型導電領域の間の間隔は、0.8mm~1.2mmであり、前記半導体基板の後面における前記N型導電領域の分布割合は、50%~85%であり、前記半導体基板の後面における前記P型導電領域の分布割合は、15%~50%であることを特徴とする半導体基板。 - 前記N型導電領域及び/又は前記P型導電領域の、前記境界線から5μm~15μm離れた位置には、ボイドが設けられていることを特徴とする請求項1に記載の半導体基板。
- 前記N型導電領域及び/又は前記P型導電領域の、前記境界線から5μm~10μm離れた位置には、ボイドが設けられていることを特徴とする請求項2に記載の半導体基板。
- 前記ボイドの直径は、1μm~10μmであることを特徴とする請求項1に記載の半導体基板。
- 前記ボイドの直径は、1μm~5μmであることを特徴とする請求項4に記載の半導体基板。
- 前記ボイドの深さは、0.5μm~2μmであることを特徴とする請求項1に記載の半導体基板。
- 前記多角形平面の形状は、菱形、方形、台形、略菱形、略方形及び略台形のうちの少なくとも一種を含むことを特徴とする請求項1に記載の半導体基板。
- 前記半導体基板は、P型結晶シリコン基板であることを特徴とする請求項1に記載の半導体基板。
- 請求項1~8の何れか一項に記載の半導体基板と、
前記半導体基板の後面のN型導電領域に設けられるトンネル酸化層と、
前記半導体基板の後面のP型導電領域に設けられる局所裏面電界と、
前記トンネル酸化層の前記半導体基板から離反する側に設けられる多結晶シリコン薄膜層と、
前記局所裏面電界に設けられる共晶層と、
前記多結晶シリコン薄膜層の前記トンネル酸化層から離反する側と前記P型導電領域とに設けられる後面パッシベーション層と、
前記後面パッシベーション層を通り抜けて前記局所裏面電界とのオーム接触を形成する第1電極と、
前記後面パッシベーション層を通り抜けて前記多結晶シリコン薄膜層とのオーム接触を形成する第2電極と、を備えることを特徴とする太陽電池。 - 前記半導体基板の前面に設けられ且つ前記半導体基板から離間する方向に順次積層設置された前面パッシベーション層及び反射防止層を更に備えることを特徴とする請求項9に記載の太陽電池。
- 太陽光発電モジュールであって、
前記太陽光発電モジュールは、請求項9に記載の太陽電池を備え、前記太陽電池は、全一枚の形態又は分割された複数枚の形態で電気的に接続されて太陽電池ストリングとなることを特徴とする太陽光発電モジュール。
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AU2024200716A1 (en) | 2024-02-22 |
CN116936658A (zh) | 2023-10-24 |
CN115224137B (zh) | 2023-09-15 |
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EP4297102A1 (en) | 2023-12-27 |
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