JP7446447B2 - 複合的オーバレイ計測ターゲット - Google Patents

複合的オーバレイ計測ターゲット Download PDF

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JP7446447B2
JP7446447B2 JP2022546445A JP2022546445A JP7446447B2 JP 7446447 B2 JP7446447 B2 JP 7446447B2 JP 2022546445 A JP2022546445 A JP 2022546445A JP 2022546445 A JP2022546445 A JP 2022546445A JP 7446447 B2 JP7446447 B2 JP 7446447B2
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measurement
metrology
pattern elements
overlay
target
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JP2023513040A5 (https=
JP2023513040A (ja
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アンナ ゴロツバン
イナ ターシシュ－シャピル
マーク ギノブカー
ラウィ ディラウィ
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95623—Inspecting patterns on the surface of objects using a spatial filtering method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/07—Investigating materials by wave or particle radiation secondary emission
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/40—Imaging
    • G01N2223/418—Imaging electron microscope
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6113—Specific applications or type of materials patterned objects; electronic devices printed circuit board [PCB]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Glass Compositions (AREA)
  • Holo Graphy (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
JP2022546445A 2020-01-30 2021-01-26 複合的オーバレイ計測ターゲット Active JP7446447B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US202062967951P 2020-01-30 2020-01-30
US62/967,951 2020-01-30
US202063032217P 2020-05-29 2020-05-29
US63/032,217 2020-05-29
US16/996,254 US11809090B2 (en) 2020-01-30 2020-08-18 Composite overlay metrology target
US16/996,254 2020-08-18
PCT/US2021/015144 WO2021154762A1 (en) 2020-01-30 2021-01-26 Composite overlay metrology target

Publications (3)

Publication Number Publication Date
JP2023513040A JP2023513040A (ja) 2023-03-30
JP2023513040A5 JP2023513040A5 (https=) 2023-12-12
JP7446447B2 true JP7446447B2 (ja) 2024-03-08

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Country Link
US (1) US11809090B2 (https=)
EP (1) EP4078159A4 (https=)
JP (1) JP7446447B2 (https=)
KR (1) KR102719209B1 (https=)
CN (1) CN114930161B (https=)
TW (1) TW202133292A (https=)
WO (1) WO2021154762A1 (https=)

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US11899375B2 (en) 2020-11-20 2024-02-13 Kla Corporation Massive overlay metrology sampling with multiple measurement columns
US11460783B2 (en) * 2021-01-07 2022-10-04 Kla Corporation System and method for focus control in extreme ultraviolet lithography systems using a focus-sensitive metrology target
US12536644B2 (en) * 2021-04-27 2026-01-27 Prosemi Co., Ltd. Detection pattern unit for detecting pattern on semiconductor device, and method and system for implementing the same
US11862524B2 (en) 2021-06-28 2024-01-02 Kla Corporation Overlay mark design for electron beam overlay
US11703767B2 (en) 2021-06-28 2023-07-18 Kla Corporation Overlay mark design for electron beam overlay
US11720031B2 (en) 2021-06-28 2023-08-08 Kla Corporation Overlay design for electron beam and scatterometry overlay measurements
KR102875946B1 (ko) * 2021-11-27 2025-10-23 케이엘에이 코포레이션 회절 기반 오버레이 오차 계측을 위한 개선된 타겟
US12416867B2 (en) * 2022-09-22 2025-09-16 United Microelectronics Corp. Overlay target and overlay method
TW202414771A (zh) * 2022-09-29 2024-04-01 聯華電子股份有限公司 疊對圖樣
US12585182B2 (en) * 2022-12-29 2026-03-24 Onto Innovation Inc. Overlay correction for advanced integrated-circuit devices

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JP2005518107A (ja) 2002-02-15 2005-06-16 ケーエルエー−テンカー テクノロジィース コーポレイション オーバレイ計測および制御方法
JP2006245030A (ja) 2005-02-28 2006-09-14 Nikon Corp 計測方法及び計測用パターンを備えた物体
JP2007150297A (ja) 2005-11-23 2007-06-14 Asml Netherlands Bv 投影システムの倍率を計測する方法、デバイス製造方法およびコンピュータプログラム製品
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JP2015532733A (ja) 2012-09-06 2015-11-12 ケーエルエー−テンカー コーポレイション 埋設ｓｅｍ構造オーバーレイ標的を用いたｏｖｌのためのデバイス相関計測法（ｄｃｍ）
JP2020524276A (ja) 2017-06-19 2020-08-13 ケーエルエー コーポレイション 撮像ベースオーバーレイ及び散乱計測ベースオーバーレイのためのハイブリッドオーバーレイ標的設計

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Publication number Publication date
US11809090B2 (en) 2023-11-07
KR102719209B1 (ko) 2024-10-17
WO2021154762A1 (en) 2021-08-05
CN114930161B (zh) 2025-08-05
EP4078159A4 (en) 2024-01-24
TW202133292A (zh) 2021-09-01
US20210240089A1 (en) 2021-08-05
CN114930161A (zh) 2022-08-19
KR20220129635A (ko) 2022-09-23
JP2023513040A (ja) 2023-03-30
EP4078159A1 (en) 2022-10-26

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