JP7445059B2 - 太陽電池および太陽電池の製造方法、光起電力モジュール - Google Patents
太陽電池および太陽電池の製造方法、光起電力モジュール Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 230000006798 recombination Effects 0.000 description 14
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- 230000000694 effects Effects 0.000 description 10
- 238000005215 recombination Methods 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 9
- 229910052796 boron Inorganic materials 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- -1 phosphorous ions Chemical class 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 4
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 239000002313 adhesive film Substances 0.000 description 3
- 229910001439 antimony ion Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
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- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920006124 polyolefin elastomer Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
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- 239000012945 sealing adhesive Substances 0.000 description 1
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- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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Description
Claims (23)
- N型ベースと、前記N型ベースの第1表面に設置されたP型エミッタと、を備え、
ここで、前記P型エミッタは第1部および第2部を含み、前記第1部の天面は第1ピラミッド構造を含み、前記第1ピラミッド構造の少なくとも一つの斜面の少なくとも一部の表面は第1ピラミッド構造の中心に向かって凹んでいる、前記第2部の天面は第2ピラミッド構造を含み、前記第2ピラミッド構造の斜面は平面であり、前記N型ベースの第1表面に対して垂直な方向において前記第1部の接合深さは前記第2部の接合深さよりも深い、
ことを特徴とする太陽電池。
- 前記第1部のP型エミッタの結晶構造は転位を有することを特徴とする請求項1に記載の太陽電池。
- 前記第1部のP型エミッタのシート抵抗は前記第2部のP型エミッタのシート抵抗より小さいことを特徴とする請求項1に記載の太陽電池。
- 前記第1部のP型エミッタのシート抵抗は20ohm/sq~300ohm/sqであり、前記第2部のP型エミッタのシート抵抗は100ohm/sq~1000ohm/sqであることを特徴とする請求項3に記載の太陽電池。
- 前記第1ピラミッド構造の高さは、0.1μm~5μmであり、前記第1ピラミッド構造の底面の一次元寸法は、0.1μm~5μmであることを特徴とする請求項1に記載の太陽電池。
- 前記第1ピラミッド構造の少なくとも一部がさらに第1サブ構造を含み、前記第1サブ構造は第1ピラミッド構造の頂部に位置し、前記第1サブ構造は球体または球状体のいずれかであることを特徴とする請求項1に記載の太陽電池。
- 前記第1部の接合深さと前記第2部の接合深さの比は2以上であることを特徴とする請求項1に記載の太陽電池。
- 前記第1部の接合深さは、2μm~10μmであり、前記第2部の接合深さを0.1μm~3μmであることを特徴とする請求項7に記載の太陽電池。
- 前記第1部のP型エミッタの天面ドーピング濃度は、前記第2部のP型エミッタの天面濃度より大きいか、または等しいことを特徴とする請求項7に記載の太陽電池。
- 前記第1部のP型エミッタの天面ドーピング濃度は1E18~5E20atom/cm3であることを特徴とする請求項9に記載の太陽電池。
- 前記第1部の天面ドーピング濃度と前記第1部の底面ドーピング濃度の差は1E16atom/cm3~5E20atom/cm3であることを特徴とする請求項10に記載の太陽電池。
- 前記第2部の天面ドーピング濃度と前記第2部の底面ドーピング濃度の差は1E16atom/cm3-1E20atom/cm3であることを特徴とする請求項10に記載の太陽電池。
- 前記第2部の幅と前記第1部の幅の比は60以上であることを特徴とする請求項1に記載の太陽電池。
- 第1金属電極をさらに含み、前記第1金属電極は前記N型ベースの第1表面上に設けられ、前記第1部のP型エミッタに電気的に接続されることを特徴とする請求項1に記載の太陽電池。
- 前記P型エミッタはさらにトランジション領域を含み、前記トランジション領域は前記第1部と前記第2部との間に位置し、前記トランジション領域の天面ドーピング濃度は前記第2部の天面ドーピング濃度より大きいまたは等しく、また前記第1部の天面ドーピング濃度より小さいまたは等しいことを特徴とする請求項1に記載の太陽電池。
- 前記太陽電池は、前記N型ベースの第2表面に位置し、前記N型ベースから離れる方向で順に設置されたトンネル層及びドープされた導電層、を備える、
ことを特徴とする請求項1に記載の太陽電池。 - N型ベースを提供することと、
前記N型ベースの第1表面にP型エミッタが形成され、前記P型エミッタは第1部および第2部を含み、前記第1部の天面は第1ピラミッド構造を含み、前記第1ピラミッド構造の少なくとも一つの斜面の少なくとも一部の表面は第1ピラミッド構造の中心に対して凹であり、前記第2部の天面は第2ピラミッド構造を含み、前記第2ピラミッド構造の斜面は平面であり、前記N型ベースの第1表面に対して垂直な方向で前記第1部の接合深さは前記第2部の接合深さよりも深いことと、
を含むことを特徴とする太陽電池の製造方法。 - 前記P型エミッタを形成する方法は、
N型初期ベースを提供することと、
前記N型初期ベースの天面に3価のドーピング源を堆積させることと、
所定領域の前記N型初期ベースの天面を外部エネルギー源処理工程で処理し、外部エネルギー源処理工程で処理された3価のドーピング源が前記N型初期ベースの内部に拡散することと、
前記N型初期ベースを高温処理して、前記N型初期ベース内にP型エミッタを形成し、前記N型初期ベースは前記P型エミッタの天面を露出させ、前記N型初期ベース中には、前記P型エミッタ以外の領域に前記N型ベースを形成し、ここで、前記所定領域の前記N型初期ベース内に前記第1部のP型エミッタを形成し、前記所定領域外の前記N型初期ベース内に前記第2部のP型エミッタを形成することと、
を含むことを特徴とする請求項17に記載の太陽電池の製造方法。 - 前記外部エネルギー源処理工程は、レーザードーピング工程、プラズマ放射、または標的イオン注入工程のいずれかを含むことを特徴とする請求項18に記載の太陽電池の製造方法。
- 第1金属電極を形成し、前記第1金属電極は前記第1部のP型エミッタに電気的に接続されることをさらに含むことを特徴とする請求項18に記載の太陽電池の製造方法。
- 前記第1金属電極の幅は前記第1部のP型エミッタの幅より小さいまたは等しいことを特徴とする請求項20に記載の太陽電池の製造方法。
- 前記N型ベースの第2表面、また前記N型ベースから離れる方向に、トンネル層、ドープされた導電層が順に形成されていることをさらに含むことを特徴とする請求項17に記載の太陽電池の製造方法。
- 請求項1~16のいずれか1項に記載の太陽電池が接続された電池ストリングと、
前記電池ストリングの表面を覆うために用いられた封止層と、
前記封止層から離れた前記電池ストリングの表面を覆うために用いられるカバープレートと、を備える、
ことを特徴とする光起電力モジュール。
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