JP7441908B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
- Publication number
- JP7441908B2 JP7441908B2 JP2022143071A JP2022143071A JP7441908B2 JP 7441908 B2 JP7441908 B2 JP 7441908B2 JP 2022143071 A JP2022143071 A JP 2022143071A JP 2022143071 A JP2022143071 A JP 2022143071A JP 7441908 B2 JP7441908 B2 JP 7441908B2
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- Japan
- Prior art keywords
- substrate support
- exhaust
- substrate
- space
- processing apparatus
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims description 187
- 238000000034 method Methods 0.000 claims description 106
- 238000000926 separation method Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 60
- 239000010409 thin film Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 238000007789 sealing Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
前記ゲートバルブは、基板1を搬出入するために、チャンバ本体110の一側に形成されるゲートを開閉するための構成であり、様々な構成が可能である。
前記インナーリード部300は、インナーリード駆動部600を介して上下移動する構成であり、様々な構成が可能である。
前記ガス供給ノズル410は、処理空間S2に露出され、処理空間S2内にプロセスガスを供給する構成であり、様々な構成が可能である。
前記駆動源620は、固定支持部640に設けられて結合する駆動ロッド610を上下に駆動する構成であり、様々な構成が可能である。
100 プロセスチャンバ
200 基板支持部
300 インナーリード部
400 ガス供給部
500 排気部
600 インナーリード駆動部
700 充填部材
Claims (7)
- 上部が開放され、下部面に貫通孔が形成されるチャンバ本体と、前記チャンバ本体の上部に結合され、内部空間を形成するトップリードを含むプロセスチャンバと、
前記プロセスチャンバに設けられ、上面に基板が載置される基板支持プレートと、前記貫通孔を貫通して設けられ、前記基板支持プレートを支持する基板支持シャフトを含む基板支持部と、
基板処理のためのプロセスガスを供給するガス供給部と、
チャンバ本体の下部に形成され、前記ガス供給部を介して供給されたプロセスガスを外部に排気する排気部と、を含み、
前記チャンバ本体は、
前記基板支持シャフトの外周面と前記貫通孔の内側面との間に形成され、前記排気部と連通される排気流路が形成されることを特徴とする基板処理装置。 - 前記プロセスチャンバは、
前記貫通孔を含む前記チャンバ本体の底面に、前記基板支持部が挿入されて設けられるように形成される取り付け溝を含むことを特徴とする請求項1に記載の基板処理装置。 - 前記内部空間に上下移動可能に設けられ、下降を通じて一部が前記取り付け溝に隣接した前記底面と密着して、前記基板支持部が内部に位置する密閉された処理空間を形成するインナーリード部を含み、
前記ガス供給部は、
前記処理空間に前記プロセスガスを供給するように、前記基板支持シャフトの縁に隣接して設けられることを特徴とする請求項2に記載の基板処理装置。 - 前記プロセスチャンバの前記トップリードを貫通して設けられ、前記インナーリード部の上下移動を駆動するインナーリード駆動部を含むことを特徴とする請求項3に記載の基板処理装置。
- 前記基板支持プレートと前記取り付け溝との間に設けられ、前記基板支持プレートと前記取り付け溝との離隔空間の一部を充填し、前記処理空間と前記排気流路を連結する取り付け溝排気流路を形成する充填部材を含むことを特徴とする請求項3に記載の基板処理装置。
- 前記基板支持プレートと前記取り付け溝との間に形成され、前記処理空間と前記排気流路を連結する取り付け溝排気流路が形成されることを特徴とする請求項3に記載の基板処理装置。
- 前記排気部は、
前記貫通孔の内側面の少なくとも一部に設けられ、前記基板支持シャフトを支持し、前記排気流路と連通する排気空間を形成するように上部が開放された排気本体と、前記排気本体の側面に形成され、前記排気空間に流入された前記プロセスガスを外部に排気する少なくとも一つ以上のガス排気ポートを含むことを特徴とする請求項1~6のいずれか1項に記載の基板処理装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020210123219A KR20230040072A (ko) | 2021-09-15 | 2021-09-15 | 기판처리장치 |
KR10-2021-0123219 | 2021-09-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2023043166A JP2023043166A (ja) | 2023-03-28 |
JP7441908B2 true JP7441908B2 (ja) | 2024-03-01 |
Family
ID=85478887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022143071A Active JP7441908B2 (ja) | 2021-09-15 | 2022-09-08 | 基板処理装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20230084826A1 (ja) |
JP (1) | JP7441908B2 (ja) |
KR (1) | KR20230040072A (ja) |
CN (1) | CN115810564A (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070051312A1 (en) | 2003-08-07 | 2007-03-08 | Ofer Sneh | Perimeter partition-valve with protected seals and associated small size process chambers and multiple chamber systems |
JP2011009299A (ja) | 2009-06-23 | 2011-01-13 | Tokyo Electron Ltd | 高圧処理装置 |
JP2015230948A (ja) | 2014-06-04 | 2015-12-21 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、記憶媒体 |
JP2019041026A (ja) | 2017-08-25 | 2019-03-14 | 東京エレクトロン株式会社 | インナーウォール及び基板処理装置 |
-
2021
- 2021-09-15 KR KR1020210123219A patent/KR20230040072A/ko unknown
-
2022
- 2022-09-01 US US17/901,640 patent/US20230084826A1/en active Pending
- 2022-09-08 JP JP2022143071A patent/JP7441908B2/ja active Active
- 2022-09-09 CN CN202211101412.5A patent/CN115810564A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070051312A1 (en) | 2003-08-07 | 2007-03-08 | Ofer Sneh | Perimeter partition-valve with protected seals and associated small size process chambers and multiple chamber systems |
JP2011009299A (ja) | 2009-06-23 | 2011-01-13 | Tokyo Electron Ltd | 高圧処理装置 |
JP2015230948A (ja) | 2014-06-04 | 2015-12-21 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、記憶媒体 |
JP2019041026A (ja) | 2017-08-25 | 2019-03-14 | 東京エレクトロン株式会社 | インナーウォール及び基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20230040072A (ko) | 2023-03-22 |
JP2023043166A (ja) | 2023-03-28 |
TW202326902A (zh) | 2023-07-01 |
CN115810564A (zh) | 2023-03-17 |
US20230084826A1 (en) | 2023-03-16 |
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