JP7438111B2 - 金属膜の高圧酸化 - Google Patents
金属膜の高圧酸化 Download PDFInfo
- Publication number
- JP7438111B2 JP7438111B2 JP2020533601A JP2020533601A JP7438111B2 JP 7438111 B2 JP7438111 B2 JP 7438111B2 JP 2020533601 A JP2020533601 A JP 2020533601A JP 2020533601 A JP2020533601 A JP 2020533601A JP 7438111 B2 JP7438111 B2 JP 7438111B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- tungsten
- feature
- metal
- membrane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003647 oxidation Effects 0.000 title claims description 20
- 238000007254 oxidation reaction Methods 0.000 title claims description 20
- 229910052751 metal Inorganic materials 0.000 title description 46
- 239000002184 metal Substances 0.000 title description 45
- 239000000758 substrate Substances 0.000 claims description 60
- 238000000034 method Methods 0.000 claims description 33
- 229910052721 tungsten Inorganic materials 0.000 claims description 32
- 239000010937 tungsten Substances 0.000 claims description 29
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 28
- 230000001590 oxidative effect Effects 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000007800 oxidant agent Substances 0.000 claims description 10
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 5
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 5
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 5
- 239000012528 membrane Substances 0.000 description 52
- 239000010408 film Substances 0.000 description 47
- 239000000463 material Substances 0.000 description 40
- 229910044991 metal oxide Inorganic materials 0.000 description 8
- 150000004706 metal oxides Chemical class 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- -1 oxygen nitrides Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- YLAFGLJNWFUJLU-UHFFFAOYSA-N $l^{2}-germane;$l^{3}-germane Chemical compound [GeH2].[GeH2].[GeH2].[GeH3].[GeH3] YLAFGLJNWFUJLU-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- OFZCMPKIAFHGRP-UHFFFAOYSA-N [GeH3][GeH2][GeH2][GeH2][GeH2][GeH3] Chemical compound [GeH3][GeH2][GeH2][GeH2][GeH2][GeH3] OFZCMPKIAFHGRP-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- LUXIMSHPDKSEDK-UHFFFAOYSA-N bis(disilanyl)silane Chemical compound [SiH3][SiH2][SiH2][SiH2][SiH3] LUXIMSHPDKSEDK-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- VXGHASBVNMHGDI-UHFFFAOYSA-N digermane Chemical compound [Ge][Ge] VXGHASBVNMHGDI-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- LICVGLCXGGVLPA-UHFFFAOYSA-N disilanyl(disilanylsilyl)silane Chemical compound [SiH3][SiH2][SiH2][SiH2][SiH2][SiH3] LICVGLCXGGVLPA-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- WLKSSWJSFRCZKL-UHFFFAOYSA-N trimethylgermanium Chemical compound C[Ge](C)C WLKSSWJSFRCZKL-UHFFFAOYSA-N 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/10—Oxidising
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/10—Oxidising
- C23C8/12—Oxidising using elemental oxygen or ozone
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/10—Oxidising
- C23C8/16—Oxidising using oxygen-containing compounds, e.g. water, carbon dioxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76227—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials the dielectric materials being obtained by full chemical transformation of non-dielectric materials, such as polycristalline silicon, metals
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
- Physical Vapour Deposition (AREA)
Description
Claims (5)
- 基板処理の方法であって、
少なくとも1つの特徴が形成された基板表面を有する基板を提供することであって、前記少なくとも1つの特徴は、前記基板表面から前記基板内へある距離だけ延在し、かつ側壁および底部を有する、少なくとも1つの特徴が形成された基板表面を有する基板を提供することと、
前記基板表面上および前記少なくとも1つの特徴内にタングステン含有膜を形成することと、
前記少なくとも1つの特徴以外の前記基板表面から前記タングステン含有膜を除去することと、
前記少なくとも1つの特徴から延在する酸化タングステンピラーを形成するために前記タングステン含有膜を酸化させることであって、前記基板を約2バール以上の圧力でH2O、O2、N2O、O3、CO2、CO、またはH2O2の1又は複数を含む酸化剤に曝露することを含む、前記タングステン含有膜を酸化させることと
を含み、前記タングステン含有膜が、0より大きく+6未満の範囲の平均タングステン酸化状態を有する亜酸化タングステンを含む、方法。 - 前記タングステン含有膜の上部が前記特徴以外の前記基板表面とほぼ同一平面上になるように、前記タングステン含有膜が除去される、請求項1に記載の方法。
- 前記酸化剤が、95%以上のH2Oで構成される、請求項1に記載の方法。
- 酸化タングステンピラーがWO3を含む、請求項1に記載の方法。
- 前記酸化タングステンピラーが、0より大きく+6未満の範囲の平均タングステン酸化状態を有する亜酸化タングステンを含む、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762608484P | 2017-12-20 | 2017-12-20 | |
US62/608,484 | 2017-12-20 | ||
PCT/US2018/066368 WO2019126254A1 (en) | 2017-12-20 | 2018-12-19 | High pressure oxidation of metal films |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021507522A JP2021507522A (ja) | 2021-02-22 |
JP7438111B2 true JP7438111B2 (ja) | 2024-02-26 |
Family
ID=66814259
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020533601A Active JP7438111B2 (ja) | 2017-12-20 | 2018-12-19 | 金属膜の高圧酸化 |
Country Status (7)
Country | Link |
---|---|
US (2) | US11131015B2 (ja) |
JP (1) | JP7438111B2 (ja) |
KR (2) | KR102664859B1 (ja) |
CN (2) | CN111512429B (ja) |
SG (1) | SG11202005363VA (ja) |
TW (2) | TW202321493A (ja) |
WO (1) | WO2019126254A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI778118B (zh) * | 2017-09-05 | 2022-09-21 | 美商應用材料股份有限公司 | 來自次氧化物的自對準結構 |
US11830728B2 (en) * | 2021-10-13 | 2023-11-28 | Applied Materials, Inc. | Methods for seamless gap filling of dielectric material |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007052311A (ja) | 2005-08-19 | 2007-03-01 | Sanyo Epson Imaging Devices Corp | 電気光学装置および電子機器 |
JP2011109099A (ja) | 2009-11-17 | 2011-06-02 | Samsung Electronics Co Ltd | 導電構造物を含む半導体装置及びその製造方法 |
US20130241037A1 (en) | 2009-03-18 | 2013-09-19 | Samsung Electronics Co., Ltd. | Semiconductor Devices Having Metal Oxide Patterns |
US20170358483A1 (en) | 2016-06-14 | 2017-12-14 | Applied Materials, Inc. | Oxidative Volumetric Expansion Of Metals And Metal Containing Compounds |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07135202A (ja) * | 1993-11-09 | 1995-05-23 | Miyagi Oki Denki Kk | 半導体装置の製造方法 |
JP3315287B2 (ja) * | 1995-03-22 | 2002-08-19 | 株式会社東芝 | 半導体装置及びその製造方法 |
JPH09275137A (ja) * | 1996-04-03 | 1997-10-21 | Sony Corp | 半導体装置及びその製造方法 |
JP4956355B2 (ja) * | 1998-08-07 | 2012-06-20 | 株式会社東芝 | 半導体装置の製造方法 |
US6046108A (en) * | 1999-06-25 | 2000-04-04 | Taiwan Semiconductor Manufacturing Company | Method for selective growth of Cu3 Ge or Cu5 Si for passivation of damascene copper structures and device manufactured thereby |
EP1271636A1 (en) * | 2001-06-22 | 2003-01-02 | Infineon Technologies AG | Thermal oxidation process control by controlling oxidation agent partial pressure |
JP2005101141A (ja) * | 2003-09-24 | 2005-04-14 | Renesas Technology Corp | 半導体集積回路装置およびその製造方法 |
KR20080062764A (ko) * | 2006-12-29 | 2008-07-03 | 삼성전자주식회사 | 게르마늄실리사이드 형성방법 및 이를 적용하여 게르마늄실리사이드가 형성된 디바이스 |
US7951728B2 (en) * | 2007-09-24 | 2011-05-31 | Applied Materials, Inc. | Method of improving oxide growth rate of selective oxidation processes |
KR101534678B1 (ko) * | 2009-02-12 | 2015-07-08 | 삼성전자주식회사 | 텅스텐 콘택 플러그를 산소 분위기에서 rta 처리하고, rto 처리된 텅스텐 플러그를 수소 분위기에서 환원시키는 반도체 소자의 제조방법 |
TWI532138B (zh) * | 2009-11-17 | 2016-05-01 | 三星電子股份有限公司 | 具有導電結構的半導體元件及其形成方法 |
KR102028779B1 (ko) | 2012-02-13 | 2019-10-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판의 선택적 산화를 위한 방법 및 장치 |
KR102002782B1 (ko) | 2012-09-10 | 2019-07-23 | 삼성전자주식회사 | 팽창성 부재를 사용하는 반도체 장치의 제조 방법 |
JP2014141739A (ja) | 2012-12-27 | 2014-08-07 | Tokyo Electron Ltd | 金属マンガン膜の成膜方法、処理システム、電子デバイスの製造方法および電子デバイス |
KR20140106977A (ko) | 2013-02-27 | 2014-09-04 | 삼성전자주식회사 | 고성능 금속 산화물 반도체 박막 트랜지스터 및 그 제조방법 |
WO2018064292A1 (en) * | 2016-09-30 | 2018-04-05 | Applied Materials, Inc. | Methods of forming self-aligned vias |
-
2018
- 2018-12-12 TW TW112104040A patent/TW202321493A/zh unknown
- 2018-12-12 TW TW107144667A patent/TWI794363B/zh active
- 2018-12-19 US US16/225,240 patent/US11131015B2/en active Active
- 2018-12-19 WO PCT/US2018/066368 patent/WO2019126254A1/en active Application Filing
- 2018-12-19 CN CN201880082311.3A patent/CN111512429B/zh active Active
- 2018-12-19 CN CN202310904747.9A patent/CN117012710A/zh active Pending
- 2018-12-19 KR KR1020227034268A patent/KR102664859B1/ko active IP Right Grant
- 2018-12-19 KR KR1020207020499A patent/KR102452407B1/ko active IP Right Grant
- 2018-12-19 SG SG11202005363VA patent/SG11202005363VA/en unknown
- 2018-12-19 JP JP2020533601A patent/JP7438111B2/ja active Active
-
2021
- 2021-09-13 US US17/473,448 patent/US20210404046A1/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007052311A (ja) | 2005-08-19 | 2007-03-01 | Sanyo Epson Imaging Devices Corp | 電気光学装置および電子機器 |
US20130241037A1 (en) | 2009-03-18 | 2013-09-19 | Samsung Electronics Co., Ltd. | Semiconductor Devices Having Metal Oxide Patterns |
JP2011109099A (ja) | 2009-11-17 | 2011-06-02 | Samsung Electronics Co Ltd | 導電構造物を含む半導体装置及びその製造方法 |
US20170358483A1 (en) | 2016-06-14 | 2017-12-14 | Applied Materials, Inc. | Oxidative Volumetric Expansion Of Metals And Metal Containing Compounds |
Also Published As
Publication number | Publication date |
---|---|
US20210404046A1 (en) | 2021-12-30 |
KR20220137178A (ko) | 2022-10-11 |
CN111512429B (zh) | 2023-07-25 |
CN111512429A (zh) | 2020-08-07 |
US20190185983A1 (en) | 2019-06-20 |
US11131015B2 (en) | 2021-09-28 |
WO2019126254A1 (en) | 2019-06-27 |
TW202321493A (zh) | 2023-06-01 |
JP2021507522A (ja) | 2021-02-22 |
TW201931524A (zh) | 2019-08-01 |
SG11202005363VA (en) | 2020-07-29 |
CN117012710A (zh) | 2023-11-07 |
KR102664859B1 (ko) | 2024-05-10 |
KR20200088516A (ko) | 2020-07-22 |
KR102452407B1 (ko) | 2022-10-06 |
TWI794363B (zh) | 2023-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10741435B2 (en) | Oxidative volumetric expansion of metals and metal containing compounds | |
US10699952B2 (en) | Deposition and treatment of films for patterning | |
JP7194725B2 (ja) | 3dメモリ構造における高アスペクト比孔形成へのボトムアップアプローチ | |
TWI751406B (zh) | 形成金屬硫系化物柱體之方法 | |
US20210404046A1 (en) | High Pressure Oxidation of Metal Films | |
US10636659B2 (en) | Selective deposition for simplified process flow of pillar formation | |
US11414751B2 (en) | Self-aligned structures from sub-oxides |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20211115 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20221124 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230117 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230414 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20230815 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231214 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20231222 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240123 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240213 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7438111 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |