JP7433873B2 - 弾性波共振器、フィルタ、及びマルチプレクサ - Google Patents

弾性波共振器、フィルタ、及びマルチプレクサ Download PDF

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Publication number
JP7433873B2
JP7433873B2 JP2019221476A JP2019221476A JP7433873B2 JP 7433873 B2 JP7433873 B2 JP 7433873B2 JP 2019221476 A JP2019221476 A JP 2019221476A JP 2019221476 A JP2019221476 A JP 2019221476A JP 7433873 B2 JP7433873 B2 JP 7433873B2
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piezoelectric layer
substrate
insulating layer
layer
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JP2019221476A
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Japanese (ja)
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JP2021093570A (ja
JP2021093570A5 (enExample
Inventor
凌平 小宮山
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Taiyo Yuden Co Ltd
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Taiyo Yuden Co Ltd
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Priority to JP2019221476A priority Critical patent/JP7433873B2/ja
Priority to US17/102,835 priority patent/US11722117B2/en
Priority to CN202011400523.7A priority patent/CN112929004B/zh
Publication of JP2021093570A publication Critical patent/JP2021093570A/ja
Publication of JP2021093570A5 publication Critical patent/JP2021093570A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02866—Means for compensation or elimination of undesirable effects of bulk wave excitation and reflections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/058—Holders or supports for surface acoustic wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6489—Compensation of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H03H9/725—Duplexers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0407—Temperature coefficient

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
JP2019221476A 2019-12-06 2019-12-06 弾性波共振器、フィルタ、及びマルチプレクサ Active JP7433873B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2019221476A JP7433873B2 (ja) 2019-12-06 2019-12-06 弾性波共振器、フィルタ、及びマルチプレクサ
US17/102,835 US11722117B2 (en) 2019-12-06 2020-11-24 Acoustic wave resonator, filter, multiplexer, and wafer
CN202011400523.7A CN112929004B (zh) 2019-12-06 2020-12-04 声波谐振器、滤波器、多路复用器和晶片

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019221476A JP7433873B2 (ja) 2019-12-06 2019-12-06 弾性波共振器、フィルタ、及びマルチプレクサ

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JP2021093570A JP2021093570A (ja) 2021-06-17
JP2021093570A5 JP2021093570A5 (enExample) 2022-12-26
JP7433873B2 true JP7433873B2 (ja) 2024-02-20

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US (1) US11722117B2 (enExample)
JP (1) JP7433873B2 (enExample)
CN (1) CN112929004B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7511310B2 (ja) * 2020-06-17 2024-07-05 太陽誘電株式会社 弾性波デバイス、フィルタおよびマルチプレクサ
JP2023003114A (ja) * 2021-06-23 2023-01-11 株式会社村田製作所 表面弾性波共振子、弾性波フィルタおよびマルチプレクサ
JP2023110550A (ja) * 2022-01-28 2023-08-09 太陽誘電株式会社 圧電薄膜共振器およびその製造方法、フィルタ並びにマルチプレクサ
DE112023001613T5 (de) * 2022-06-27 2025-01-16 Ngk Insulators, Ltd. Verbundsubstrat und Verfahren zur Herstellung eines Verbundsubstrats
WO2024158022A1 (ja) * 2023-01-25 2024-08-02 Ｉ－ＰＥＸ Ｐｉｅｚｏ Ｓｏｌｕｔｉｏｎｓ株式会社 膜構造体及び電子デバイス
WO2024257838A1 (ja) * 2023-06-13 2024-12-19 株式会社村田製作所 弾性波装置及び弾性波フィルタ装置
CN116827298A (zh) * 2023-06-28 2023-09-29 中国科学技术大学 一种声波谐振器
CN116944006B (zh) * 2023-09-19 2023-12-15 中北大学 一种d11工作模式驱动的PMUT单元及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006013576A (ja) 2004-06-22 2006-01-12 Epson Toyocom Corp Ｓａｗデバイスとこれを用いた装置
JP2019201345A (ja) 2018-05-17 2019-11-21 太陽誘電株式会社 弾性波共振器、フィルタおよびマルチプレクサ
WO2020184621A1 (ja) 2019-03-11 2020-09-17 株式会社村田製作所 弾性波装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5713025B2 (ja) 2010-12-24 2015-05-07 株式会社村田製作所 弾性波装置及びその製造方法
JP6494462B2 (ja) 2015-07-29 2019-04-03 太陽誘電株式会社 弾性波デバイスおよびモジュール
JP6494545B2 (ja) 2016-02-23 2019-04-03 太陽誘電株式会社 デュプレクサ
GB2600838A (en) 2016-10-20 2022-05-11 Skyworks Solutions Inc Elastic wave device with sub-wavelength thick piezoelectric layer
WO2018163841A1 (ja) * 2017-03-09 2018-09-13 株式会社村田製作所 弾性波装置、弾性波装置パッケージ、マルチプレクサ、高周波フロントエンド回路及び通信装置
JP6658957B2 (ja) 2017-03-09 2020-03-04 株式会社村田製作所 弾性波装置、高周波フロントエンド回路及び通信装置
US10700662B2 (en) * 2017-12-28 2020-06-30 Taiyo Yuden Co., Ltd. Acoustic wave device, filter, and multiplexer
US20200403599A1 (en) * 2018-02-26 2020-12-24 Kyocera Corporation Acoustic wave element
JP7169083B2 (ja) * 2018-04-04 2022-11-10 太陽誘電株式会社 弾性波デバイスおよびマルチプレクサ
US11595019B2 (en) * 2018-04-20 2023-02-28 Taiyo Yuden Co., Ltd. Acoustic wave resonator, filter, and multiplexer
US10938372B2 (en) * 2018-05-17 2021-03-02 Taiyo Yuden Co., Ltd. Acoustic wave resonator, acoustic wave device, and filter

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006013576A (ja) 2004-06-22 2006-01-12 Epson Toyocom Corp Ｓａｗデバイスとこれを用いた装置
JP2019201345A (ja) 2018-05-17 2019-11-21 太陽誘電株式会社 弾性波共振器、フィルタおよびマルチプレクサ
WO2020184621A1 (ja) 2019-03-11 2020-09-17 株式会社村田製作所 弾性波装置

Also Published As

Publication number Publication date
JP2021093570A (ja) 2021-06-17
CN112929004A (zh) 2021-06-08
CN112929004B (zh) 2024-07-12
US11722117B2 (en) 2023-08-08
US20210175871A1 (en) 2021-06-10

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