JP7432072B2 - パワー半導体デバイス - Google Patents
パワー半導体デバイス Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 77
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- 229910052802 copper Inorganic materials 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 11
- 239000011888 foil Substances 0.000 claims description 9
- 229920000642 polymer Polymers 0.000 claims description 6
- 229910000831 Steel Inorganic materials 0.000 claims description 5
- 239000010959 steel Substances 0.000 claims description 5
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 44
- 238000010891 electric arc Methods 0.000 description 14
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 230000006835 compression Effects 0.000 description 5
- 238000007906 compression Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 238000004880 explosion Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 230000000694 effects Effects 0.000 description 2
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- 238000003825 pressing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
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- 239000013013 elastic material Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 239000012858 resilient material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
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- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
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Description
本発明は、パワー半導体デバイスに関し、特に、同様に設計された他のプレスパックパワー半導体デバイスと積層され得るプレスパックパワー半導体デバイスに関する。
プレスパックパワー半導体デバイスは、大電流整流器または中電圧ドライブなどの大電力変換器用途で使用され得る。これらのシステムでは、デバイスが阻止能力を失って逆方向の過大な故障電流を受け得る故障状況が発生することがある。この故障電流によって起こる局所的な加熱は、デバイス内部の電気アーク放電を引き起こすことがある。電気アークの高温(約20,000℃)およびそれに伴う圧力上昇により、気密封止されたプレスパックハウジングが損傷することがある。
先行技術の上記問題に鑑みて、本発明の目的は、さまざまな異なるウェハの厚みに対して使用されるハウジングを含む、改良されたパワー半導体デバイスを提供することである。本発明のこの目的は、請求項1に記載のパワー半導体デバイスによって達成される。本発明のさらなる展開は従属請求項に規定されている。
図面に使用されている参照符号およびその意味は、参照符号のリストにまとめている。一般に、本明細書全体を通して同様の要素は同じ参照符号を有する。記載されている実施形態は、例として意図されており、本発明の範囲を限定するものではない。
10,10′ パワー半導体デバイス
12a 第1の電極
12b 第2の電極
14a 第1の接触面
14b 第2の接触面
16 ウェハ
17 上側
18 下側
20 Oリング
24 外側絶縁リング
38 ゴム保護リング
42 内側絶縁リング
42a,42a′ 底部
42b 第2の部分
50 第1のフランジ部
50a 第1の平坦面部
50b 第1の部分
52 第2のフランジ部
52a 第2の平坦面部
54 第3のフランジ部
56 ポリマー箔
60 空間
70 モリブデン層
80 ばね要素
85 銅インサート
90 ゲートリード
92 第1の径方向開口部
94 第2の径方向開口部
121a,121b 主要部
d1 第1の幅
d2 第2の幅
h1,h2,h3 鉛直方向の幅
R 径方向
Z 鉛直方向
Claims (14)
- パワー半導体デバイス(10)であって、
第1の接触面(14a)を有する円盤状の第1の電極(12a)、および前記第1の接触面(14a)と反対側の第2の接触面(14b)を有する円盤状の第2の電極(12b)と、
前記第1の電極(12a)と前記第2の電極(12b)との間に挟まれているウェハ(16)と、
前記第1の電極(12a)および前記第2の電極(12b)に取り付けられ、前記ウェハ(16)を取り囲む外側絶縁リング(24)と、
前記外側絶縁リング(24)の内側の、前記ウェハ(16)を取り囲む内側絶縁リング(42;42′)と、
前記第1の電極(12a)の主要部(121a)を横方向に取り囲むリング状の第1のフランジ部(50)とを備え、第1の径方向(R)は前記第1の接触面(14a)に平行であり、前記パワー半導体デバイス(10)はさらに、
前記第1の電極(12a)の前記主要部(121a)を径方向に取り囲み、前記第1の接触面(14a)に垂直な第2の方向(Z)において前記内側絶縁リング(42;42′)と前記第1のフランジ部(50)との間に挟まれているOリング(20)を備え、
前記Oリング(20)は、弛緩状態では、前記径方向(R)に垂直な鉛直方向(Z)に細長い断面を有し、弛緩状態では、前記鉛直方向における前記Oリングの高さは前記径方向における前記Oリングの幅よりも大きく、前記Oリング(20)は弾力的に可逆的に変形可能であり、
前記第1の電極(12a)は、前記第1のフランジ部(50)の前記Oリング(20)と反対側で前記第1の電極(12a)の前記主要部(121a)から径方向に延在する第2のフランジ部(52)を有し、
前記第1の接触面(14a)に平行な平面上への直交射影において、前記第1のフランジ部(50)は、前記Oリング(20)と前記第1の電極(12a)の前記主要部(121a)との間を径方向に延在する領域において前記第2のフランジ部(52)と重なる、
パワー半導体デバイス(10)。 - 前記内側絶縁リング(42;42′)はポリマー材料を含む、請求項1に記載のパワー半導体デバイス(10)。
- 前記外側絶縁リング(24)はセラミック材料を含む、請求項1または請求項2に記載のパワー半導体デバイス(10)。
- 前記第1の電極(12a)および/または前記第2の電極(12b)は銅製である、請求項1から3のいずれか1項に記載のパワー半導体デバイス(10)。
- 前記第1のフランジ部(50)は鋼鉄を含む、請求項1から4のいずれか1項に記載のパワー半導体デバイス(10)。
- 前記第2のフランジ部(52)は銅を含む、請求項1から5のいずれか1項に記載のパワー半導体デバイス(10)。
- 前記第1のフランジ部(50)は第1の平坦面部(50a)を有し、前記第2のフランジ部(52)は、前記第1の平坦面部(50a)に平行な、前記第1の平坦面部(50a)に押圧される第2の平坦面部(52a)を有し、前記第1の接触面(14a)に平行な平面上への直交射影において、前記第1の平坦面部(50a)および前記第2の平坦面部(52a)は前記Oリング(20)と前記第1の電極(12a)の前記主要部(121a)との間の領域において延在する、請求項1から6のいずれか1項に記載のパワー半導体デバイス(10)。
- 前記第1の平坦面部(50a)と前記第2の平坦面部(52a)との間にポリマー箔(56)が挟まれている、請求項7に記載のパワー半導体デバイス(10)。
- 前記径方向(R)に沿って見ると、前記第1のフランジ部(50)の第1の部分(50b)は前記内側絶縁リング(42;42′)の第2の部分(42b)と完全に重なっており、前記Oリング(20)は前記第1の部分(50b)および前記第2の部分の径方向外側に配置されている、請求項1から8のいずれか1項に記載のパワー半導体デバイス(10)。
- 前記第1の電極(12a)と前記ウェハ(16)との間に配置される交換可能な銅インサート(85)を備える、請求項1から9のいずれか1項に記載のパワー半導体デバイス(10)。
- 前記内側絶縁リング(42;42′)は前記第2の方向(Z)に第1の端および第2の端を有し、前記Oリング(20)は前記第1の端に配置され、前記第2の端は、前記第2の電極(12b)に向かって径方向内向きに延在する径方向突出底部(42a;42a′)を有する、請求項1から10のいずれか1項に記載のパワー半導体デバイス(10)。
- ゴム保護リング(38)が前記内側絶縁リング(42;42′)の径方向内側で前記ウェハ(16)に取り付けられて前記ウェハ(16)を取り囲み、前記径方向突出底部(42a;42a′)は前記ゴム保護リング(38)と接触する、請求項11に記載のパワー半導体デバイス(10)。
- 前記内側絶縁リング(42;42′)と、前記第1の電極(12a)と、前記ゴム保護リング(38)と、前記第1のフランジ部(50)とによって空間(60)が画定される、請求項12に記載のパワー半導体デバイス(10)。
- 前記Oリング(20)の断面は楕円形である、請求項1から13のいずれか1項に記載のパワー半導体デバイス(10)。
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EP19189286.8 | 2019-07-31 | ||
EP19189286 | 2019-07-31 | ||
PCT/EP2020/071387 WO2021018957A1 (en) | 2019-07-31 | 2020-07-29 | Power semiconductor device |
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JP7432072B2 true JP7432072B2 (ja) | 2024-02-16 |
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US (1) | US12002722B2 (ja) |
EP (1) | EP3824497B1 (ja) |
JP (1) | JP7432072B2 (ja) |
CN (1) | CN114207817B (ja) |
WO (1) | WO2021018957A1 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008084926A (ja) | 2006-09-26 | 2008-04-10 | Mitsubishi Electric Corp | 圧接型半導体装置 |
JP2016062983A (ja) | 2014-09-16 | 2016-04-25 | 株式会社東芝 | 半導体装置 |
JP2018518051A (ja) | 2015-05-19 | 2018-07-05 | アーベーベー・シュバイツ・アーゲー | 半導体装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPS5354971A (en) * | 1976-10-28 | 1978-05-18 | Mitsubishi Electric Corp | Semiconductor device |
JPS54161272A (en) * | 1978-06-09 | 1979-12-20 | Mitsubishi Electric Corp | Flat semiconductor device |
US4274106A (en) * | 1977-11-07 | 1981-06-16 | Mitsubishi Denki Kabushiki Kaisha | Explosion proof vibration resistant flat package semiconductor device |
JPS5635443A (en) | 1979-08-31 | 1981-04-08 | Toshiba Corp | Semiconductor device |
JPH065686B2 (ja) * | 1985-09-04 | 1994-01-19 | 株式会社日立製作所 | 圧接型半導体装置 |
DE3941041A1 (de) * | 1989-07-31 | 1991-02-07 | Siemens Ag | Anordnung mit einem halbleiterbauelement |
DE8909244U1 (de) | 1989-07-31 | 1989-09-21 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterbauelement |
JPH112326A (ja) * | 1997-06-11 | 1999-01-06 | Seiko Epson Corp | Oリング及びこれを具備する装置 |
DE10306767A1 (de) * | 2003-02-18 | 2004-08-26 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Halbleitermodul |
EP3007220A1 (en) * | 2014-10-10 | 2016-04-13 | ABB Technology AG | Power semiconductor device having protection against explosion or rupture |
EP3073530B1 (en) | 2015-03-23 | 2017-05-03 | ABB Schweiz AG | Reverse conducting power semiconductor device |
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2020
- 2020-07-29 CN CN202080054574.0A patent/CN114207817B/zh active Active
- 2020-07-29 EP EP20744076.9A patent/EP3824497B1/en active Active
- 2020-07-29 US US17/631,589 patent/US12002722B2/en active Active
- 2020-07-29 JP JP2022506212A patent/JP7432072B2/ja active Active
- 2020-07-29 WO PCT/EP2020/071387 patent/WO2021018957A1/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008084926A (ja) | 2006-09-26 | 2008-04-10 | Mitsubishi Electric Corp | 圧接型半導体装置 |
JP2016062983A (ja) | 2014-09-16 | 2016-04-25 | 株式会社東芝 | 半導体装置 |
JP2018518051A (ja) | 2015-05-19 | 2018-07-05 | アーベーベー・シュバイツ・アーゲー | 半導体装置 |
Also Published As
Publication number | Publication date |
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CN114207817A (zh) | 2022-03-18 |
EP3824497A1 (en) | 2021-05-26 |
WO2021018957A1 (en) | 2021-02-04 |
CN114207817B (zh) | 2023-03-24 |
EP3824497B1 (en) | 2022-05-04 |
JP2022542985A (ja) | 2022-10-07 |
US12002722B2 (en) | 2024-06-04 |
US20220336300A1 (en) | 2022-10-20 |
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