JP7431339B2 - エッチング改善 - Google Patents

エッチング改善 Download PDF

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Publication number
JP7431339B2
JP7431339B2 JP2022547193A JP2022547193A JP7431339B2 JP 7431339 B2 JP7431339 B2 JP 7431339B2 JP 2022547193 A JP2022547193 A JP 2022547193A JP 2022547193 A JP2022547193 A JP 2022547193A JP 7431339 B2 JP7431339 B2 JP 7431339B2
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Japan
Prior art keywords
ion beam
structures
substrate
rotation angle
angle
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JP2022547193A
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English (en)
Japanese (ja)
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JP2023513120A (ja
JP2023513120A5 (https=
Inventor
ティマーマン タイセン， ラトガー マイヤー
モーガン エヴァンズ，
モーリス エマーソン ペプロスキー，
ジョセフ シー． オルソン，
トーマス ジェームズ ソルディ，
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2023513120A5 publication Critical patent/JP2023513120A5/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1847—Manufacturing methods
    • G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0081—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means for altering, e.g. enlarging, the entrance or exit pupil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • ing And Chemical Polishing (AREA)
JP2022547193A 2020-02-07 2021-01-12 エッチング改善 Active JP7431339B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062971811P 2020-02-07 2020-02-07
US62/971,811 2020-02-07
PCT/US2021/013086 WO2021158338A1 (en) 2020-02-07 2021-01-12 Etch improvement

Publications (3)

Publication Number Publication Date
JP2023513120A JP2023513120A (ja) 2023-03-30
JP2023513120A5 JP2023513120A5 (https=) 2023-12-13
JP7431339B2 true JP7431339B2 (ja) 2024-02-14

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ID=77177991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022547193A Active JP7431339B2 (ja) 2020-02-07 2021-01-12 エッチング改善

Country Status (7)

Country Link
US (1) US11852853B2 (https=)
EP (1) EP4100987A4 (https=)
JP (1) JP7431339B2 (https=)
KR (1) KR102791914B1 (https=)
CN (1) CN115152001B (https=)
TW (1) TWI908760B (https=)
WO (1) WO2021158338A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11487058B2 (en) 2020-08-13 2022-11-01 Applied Materials, Inc. Method for manufacturing optical device structures
WO2023205288A1 (en) * 2022-04-20 2023-10-26 Applied Materials, Inc. Method for roughness reduction in manufacturing optical device structures
US12255067B2 (en) * 2022-05-23 2025-03-18 Applied Materials, Inc. Method for depositing layers directly adjacent uncovered vias or contact holes

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160035539A1 (en) 2014-07-30 2016-02-04 Lauri SAINIEMI Microfabrication
US20160111294A1 (en) 2014-10-21 2016-04-21 Lam Research Corporation Use of ion beam etching to generate gate-all-around structure
US20190258008A1 (en) 2018-02-21 2019-08-22 Varian Semiconductor Equipment Associates, Inc. Optical component having variable depth gratings and method of formation
WO2019231576A1 (en) 2018-05-30 2019-12-05 Applied Materials, Inc. Controlling etch angles by substrate rotation in angled etch tools

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61245452A (ja) 1985-04-24 1986-10-31 Nippon Telegr & Teleph Corp <Ntt> 電子ビ−ム溶接機
JP2841441B2 (ja) * 1989-03-27 1998-12-24 株式会社島津製作所 回折格子およびその製作方法
US5116461A (en) * 1991-04-22 1992-05-26 Motorola, Inc. Method for fabricating an angled diffraction grating
JP4157654B2 (ja) * 1999-08-23 2008-10-01 独立行政法人 日本原子力研究開発機構 円錐回折斜入射分光器及び該分光器用回折格子
CN102396025B (zh) * 2009-04-13 2015-09-30 应用材料公司 使用激光、e束或聚焦离子束的hdd图案化设备
US8907307B2 (en) 2011-03-11 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for maskless patterned implantation
CN102540298B (zh) * 2012-02-01 2013-10-16 中国科学技术大学 软x射线双频光栅及其制作方法
US20160033784A1 (en) 2014-07-30 2016-02-04 Tapani Levola Optical Components
DE102016111998B4 (de) * 2016-06-30 2024-01-18 Infineon Technologies Ag Ausbilden von Elektrodengräben unter Verwendung eines gerichteten Ionenstrahls und Halbleitervorrichtung mit Graben-Elektrodenstrukturen
KR102673632B1 (ko) * 2016-12-06 2024-06-13 삼성전자주식회사 이온 빔 추출을 위한 슬릿 구조체를 포함하는 이온 빔 장비, 및 이를 이용한 식각 방법 및 자기기억소자의 제조방법
US10761334B2 (en) * 2018-07-13 2020-09-01 Varian Semiconductor Equipment Associates, Inc. System and method for optimally forming gratings of diffracted optical elements
US11137536B2 (en) * 2018-07-26 2021-10-05 Facebook Technologies, Llc Bragg-like gratings on high refractive index material
CN110632689B (zh) * 2019-08-16 2021-11-16 诚瑞光学(常州)股份有限公司 表面浮雕光栅结构的制作方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160035539A1 (en) 2014-07-30 2016-02-04 Lauri SAINIEMI Microfabrication
US20160111294A1 (en) 2014-10-21 2016-04-21 Lam Research Corporation Use of ion beam etching to generate gate-all-around structure
US20190258008A1 (en) 2018-02-21 2019-08-22 Varian Semiconductor Equipment Associates, Inc. Optical component having variable depth gratings and method of formation
WO2019231576A1 (en) 2018-05-30 2019-12-05 Applied Materials, Inc. Controlling etch angles by substrate rotation in angled etch tools

Also Published As

Publication number Publication date
TW202146945A (zh) 2021-12-16
KR102791914B1 (ko) 2025-04-03
CN115152001B (zh) 2026-01-20
EP4100987A1 (en) 2022-12-14
US20210247554A1 (en) 2021-08-12
CN115152001A (zh) 2022-10-04
KR20220136423A (ko) 2022-10-07
US11852853B2 (en) 2023-12-26
JP2023513120A (ja) 2023-03-30
EP4100987A4 (en) 2024-03-06
TWI908760B (zh) 2025-12-21
WO2021158338A1 (en) 2021-08-12

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