TWI908760B - 蝕刻改良 - Google Patents

蝕刻改良

Info

Publication number
TWI908760B
TWI908760B TW110103417A TW110103417A TWI908760B TW I908760 B TWI908760 B TW I908760B TW 110103417 A TW110103417 A TW 110103417A TW 110103417 A TW110103417 A TW 110103417A TW I908760 B TWI908760 B TW I908760B
Authority
TW
Taiwan
Prior art keywords
ion beam
structures
substrate
time period
rotation angle
Prior art date
Application number
TW110103417A
Other languages
English (en)
Chinese (zh)
Other versions
TW202146945A (zh
Inventor
拉特格 梅耶帝莫曼泰森
摩根 伊恩
莫利斯艾摩森 派羅斯基
約瑟夫Ｃ 奧爾森
湯瑪士詹姆斯 索爾迪
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW202146945A publication Critical patent/TW202146945A/zh
Application granted granted Critical
Publication of TWI908760B publication Critical patent/TWI908760B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1847—Manufacturing methods
    • G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0081—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means for altering, e.g. enlarging, the entrance or exit pupil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • ing And Chemical Polishing (AREA)
TW110103417A 2020-02-07 2021-01-29 蝕刻改良 TWI908760B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202062971811P 2020-02-07 2020-02-07
US62/971,811 2020-02-07

Publications (2)

Publication Number Publication Date
TW202146945A TW202146945A (zh) 2021-12-16
TWI908760B true TWI908760B (zh) 2025-12-21

Family

ID=77177991

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110103417A TWI908760B (zh) 2020-02-07 2021-01-29 蝕刻改良

Country Status (7)

Country Link
US (1) US11852853B2 (https=)
EP (1) EP4100987A4 (https=)
JP (1) JP7431339B2 (https=)
KR (1) KR102791914B1 (https=)
CN (1) CN115152001B (https=)
TW (1) TWI908760B (https=)
WO (1) WO2021158338A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11487058B2 (en) 2020-08-13 2022-11-01 Applied Materials, Inc. Method for manufacturing optical device structures
WO2023205288A1 (en) * 2022-04-20 2023-10-26 Applied Materials, Inc. Method for roughness reduction in manufacturing optical device structures
US12255067B2 (en) * 2022-05-23 2025-03-18 Applied Materials, Inc. Method for depositing layers directly adjacent uncovered vias or contact holes

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102540298B (zh) * 2012-02-01 2013-10-16 中国科学技术大学 软x射线双频光栅及其制作方法
US20190237292A1 (en) * 2016-12-06 2019-08-01 Samsung Electronics Co., Ltd. Ion beam apparatus including slit structure for extracting ion beam
CN110632689A (zh) * 2019-08-16 2019-12-31 瑞声通讯科技(常州)有限公司 表面浮雕光栅结构的制作方法
US20200018981A1 (en) * 2018-07-13 2020-01-16 Varian Semiconductor Equipment Associates, Inc. System and method for optimally forming gratings of diffracted optical elements

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JPS61245452A (ja) 1985-04-24 1986-10-31 Nippon Telegr & Teleph Corp <Ntt> 電子ビ−ム溶接機
JP2841441B2 (ja) * 1989-03-27 1998-12-24 株式会社島津製作所 回折格子およびその製作方法
US5116461A (en) * 1991-04-22 1992-05-26 Motorola, Inc. Method for fabricating an angled diffraction grating
JP4157654B2 (ja) * 1999-08-23 2008-10-01 独立行政法人 日本原子力研究開発機構 円錐回折斜入射分光器及び該分光器用回折格子
CN102396025B (zh) * 2009-04-13 2015-09-30 应用材料公司 使用激光、e束或聚焦离子束的hdd图案化设备
US8907307B2 (en) 2011-03-11 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for maskless patterned implantation
US20160033784A1 (en) 2014-07-30 2016-02-04 Tapani Levola Optical Components
US20160035539A1 (en) 2014-07-30 2016-02-04 Lauri SAINIEMI Microfabrication
US9536748B2 (en) 2014-10-21 2017-01-03 Lam Research Corporation Use of ion beam etching to generate gate-all-around structure
DE102016111998B4 (de) * 2016-06-30 2024-01-18 Infineon Technologies Ag Ausbilden von Elektrodengräben unter Verwendung eines gerichteten Ionenstrahls und Halbleitervorrichtung mit Graben-Elektrodenstrukturen
US10818499B2 (en) 2018-02-21 2020-10-27 Varian Semiconductor Equipment Associates, Inc. Optical component having variable depth gratings and method of formation
US10302826B1 (en) 2018-05-30 2019-05-28 Applied Materials, Inc. Controlling etch angles by substrate rotation in angled etch tools
US11137536B2 (en) * 2018-07-26 2021-10-05 Facebook Technologies, Llc Bragg-like gratings on high refractive index material

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102540298B (zh) * 2012-02-01 2013-10-16 中国科学技术大学 软x射线双频光栅及其制作方法
US20190237292A1 (en) * 2016-12-06 2019-08-01 Samsung Electronics Co., Ltd. Ion beam apparatus including slit structure for extracting ion beam
US20200018981A1 (en) * 2018-07-13 2020-01-16 Varian Semiconductor Equipment Associates, Inc. System and method for optimally forming gratings of diffracted optical elements
CN110632689A (zh) * 2019-08-16 2019-12-31 瑞声通讯科技(常州)有限公司 表面浮雕光栅结构的制作方法

Also Published As

Publication number Publication date
TW202146945A (zh) 2021-12-16
KR102791914B1 (ko) 2025-04-03
CN115152001B (zh) 2026-01-20
EP4100987A1 (en) 2022-12-14
US20210247554A1 (en) 2021-08-12
CN115152001A (zh) 2022-10-04
JP7431339B2 (ja) 2024-02-14
KR20220136423A (ko) 2022-10-07
US11852853B2 (en) 2023-12-26
JP2023513120A (ja) 2023-03-30
EP4100987A4 (en) 2024-03-06
WO2021158338A1 (en) 2021-08-12

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