CN115152001B - 蚀刻改良 - Google Patents

蚀刻改良

Info

Publication number
CN115152001B
CN115152001B CN202180016019.3A CN202180016019A CN115152001B CN 115152001 B CN115152001 B CN 115152001B CN 202180016019 A CN202180016019 A CN 202180016019A CN 115152001 B CN115152001 B CN 115152001B
Authority
CN
China
Prior art keywords
ion beam
structures
substrate
time period
during
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202180016019.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN115152001A (zh
Inventor
罗格·梅耶·蒂默曼·蒂杰森
摩根·埃文斯
莫里斯·爱默生·佩普洛斯基
约瑟夫·C·奥尔森
托马斯·詹姆斯·索尔迪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN115152001A publication Critical patent/CN115152001A/zh
Application granted granted Critical
Publication of CN115152001B publication Critical patent/CN115152001B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1847—Manufacturing methods
    • G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0081—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means for altering, e.g. enlarging, the entrance or exit pupil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • ing And Chemical Polishing (AREA)
CN202180016019.3A 2020-02-07 2021-01-12 蚀刻改良 Active CN115152001B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062971811P 2020-02-07 2020-02-07
US62/971,811 2020-02-07
PCT/US2021/013086 WO2021158338A1 (en) 2020-02-07 2021-01-12 Etch improvement

Publications (2)

Publication Number Publication Date
CN115152001A CN115152001A (zh) 2022-10-04
CN115152001B true CN115152001B (zh) 2026-01-20

Family

ID=77177991

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180016019.3A Active CN115152001B (zh) 2020-02-07 2021-01-12 蚀刻改良

Country Status (7)

Country Link
US (1) US11852853B2 (https=)
EP (1) EP4100987A4 (https=)
JP (1) JP7431339B2 (https=)
KR (1) KR102791914B1 (https=)
CN (1) CN115152001B (https=)
TW (1) TWI908760B (https=)
WO (1) WO2021158338A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11487058B2 (en) 2020-08-13 2022-11-01 Applied Materials, Inc. Method for manufacturing optical device structures
WO2023205288A1 (en) * 2022-04-20 2023-10-26 Applied Materials, Inc. Method for roughness reduction in manufacturing optical device structures
US12255067B2 (en) * 2022-05-23 2025-03-18 Applied Materials, Inc. Method for depositing layers directly adjacent uncovered vias or contact holes

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102396025A (zh) * 2009-04-13 2012-03-28 应用材料公司 使用激光、e束或聚焦离子束的hdd图案化设备
TW201945797A (zh) * 2018-02-21 2019-12-01 美商瓦里安半導體設備公司 光柵構件及其形成方法、增強實境/虛擬實境裝置

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JPS61245452A (ja) 1985-04-24 1986-10-31 Nippon Telegr & Teleph Corp <Ntt> 電子ビ−ム溶接機
JP2841441B2 (ja) * 1989-03-27 1998-12-24 株式会社島津製作所 回折格子およびその製作方法
US5116461A (en) * 1991-04-22 1992-05-26 Motorola, Inc. Method for fabricating an angled diffraction grating
JP4157654B2 (ja) * 1999-08-23 2008-10-01 独立行政法人 日本原子力研究開発機構 円錐回折斜入射分光器及び該分光器用回折格子
US8907307B2 (en) 2011-03-11 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for maskless patterned implantation
CN102540298B (zh) * 2012-02-01 2013-10-16 中国科学技术大学 软x射线双频光栅及其制作方法
US20160033784A1 (en) 2014-07-30 2016-02-04 Tapani Levola Optical Components
US20160035539A1 (en) 2014-07-30 2016-02-04 Lauri SAINIEMI Microfabrication
US9536748B2 (en) 2014-10-21 2017-01-03 Lam Research Corporation Use of ion beam etching to generate gate-all-around structure
DE102016111998B4 (de) * 2016-06-30 2024-01-18 Infineon Technologies Ag Ausbilden von Elektrodengräben unter Verwendung eines gerichteten Ionenstrahls und Halbleitervorrichtung mit Graben-Elektrodenstrukturen
KR102673632B1 (ko) * 2016-12-06 2024-06-13 삼성전자주식회사 이온 빔 추출을 위한 슬릿 구조체를 포함하는 이온 빔 장비, 및 이를 이용한 식각 방법 및 자기기억소자의 제조방법
US10302826B1 (en) 2018-05-30 2019-05-28 Applied Materials, Inc. Controlling etch angles by substrate rotation in angled etch tools
US10761334B2 (en) * 2018-07-13 2020-09-01 Varian Semiconductor Equipment Associates, Inc. System and method for optimally forming gratings of diffracted optical elements
US11137536B2 (en) * 2018-07-26 2021-10-05 Facebook Technologies, Llc Bragg-like gratings on high refractive index material
CN110632689B (zh) * 2019-08-16 2021-11-16 诚瑞光学(常州)股份有限公司 表面浮雕光栅结构的制作方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102396025A (zh) * 2009-04-13 2012-03-28 应用材料公司 使用激光、e束或聚焦离子束的hdd图案化设备
TW201945797A (zh) * 2018-02-21 2019-12-01 美商瓦里安半導體設備公司 光柵構件及其形成方法、增強實境/虛擬實境裝置

Also Published As

Publication number Publication date
TW202146945A (zh) 2021-12-16
KR102791914B1 (ko) 2025-04-03
EP4100987A1 (en) 2022-12-14
US20210247554A1 (en) 2021-08-12
CN115152001A (zh) 2022-10-04
JP7431339B2 (ja) 2024-02-14
KR20220136423A (ko) 2022-10-07
US11852853B2 (en) 2023-12-26
JP2023513120A (ja) 2023-03-30
EP4100987A4 (en) 2024-03-06
TWI908760B (zh) 2025-12-21
WO2021158338A1 (en) 2021-08-12

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