JP7429126B2 - 基板固定装置 - Google Patents
基板固定装置 Download PDFInfo
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- JP7429126B2 JP7429126B2 JP2020014639A JP2020014639A JP7429126B2 JP 7429126 B2 JP7429126 B2 JP 7429126B2 JP 2020014639 A JP2020014639 A JP 2020014639A JP 2020014639 A JP2020014639 A JP 2020014639A JP 7429126 B2 JP7429126 B2 JP 7429126B2
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- fixing device
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- substrate fixing
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- 238000010438 heat treatment Methods 0.000 claims description 71
- 239000000758 substrate Substances 0.000 claims description 56
- 239000013307 optical fiber Substances 0.000 claims description 31
- 239000012790 adhesive layer Substances 0.000 claims description 24
- 239000010410 layer Substances 0.000 claims description 7
- 229910000679 solder Inorganic materials 0.000 description 13
- 230000004048 modification Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 8
- 239000002826 coolant Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910001006 Constantan Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/035—Electrical circuits used in resistive heating apparatus
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Resistance Heating (AREA)
- Drying Of Semiconductors (AREA)
Description
図1は、第1実施形態に係る基板固定装置を簡略化して例示する断面模式図である。図1を参照すると、基板固定装置1は、主要な構成要素として、ベースプレート10と、接着層20と、静電チャック30と、光ファイバー80とを有している。基板固定装置1は、ベースプレート10の一方の面に搭載された静電チャック30により吸着対象物である基板(ウェハ等)を吸着保持する装置である。
第1実施形態の変形例1では、光ファイバーの先端の位置を下方に後退させる例を示す。なお、第1実施形態の変形例1において、既に説明した実施形態と同一構成部についての説明は省略する場合がある。
第1実施形態の変形例2では、基体31の発熱体33と異なる層に、外部から電圧を印加することで発熱する他の発熱体を内蔵した静電チャックを備えた基板固定装置の例を示す。なお、第1実施形態の変形例2において、既に説明した実施形態と同一構成部についての説明は省略する場合がある。
10 ベースプレート
10a 上面
15 絶縁層
30、30B 静電チャック
31 基体
31a 載置面
31e 温度制御領域
31x、31z 凹部
32 静電電極
33、40 発熱体
34 電流制御素子
36 配線
37 ビア配線
50 はんだ
61、62、65、66、68、69 電線
Claims (5)
- ベースプレートと、
接着層を介して前記ベースプレートの一方の面に搭載された静電チャックと、を有し、
前記静電チャックは、
基体に内蔵された複数の発熱体と、
前記基体に内蔵され、各々の前記発熱体に直列に接続された、光で制御可能な電流制御素子と、を有し、
各々の前記電流制御素子の受光部が前記基体の外部から光を受光可能であり、
前記ベースプレートには、前記ベースプレートから前記接着層に連通する貫通孔が形成され、
前記貫通孔には、前記受光部に照射される光を伝搬する光ファイバーが配置され、
前記光ファイバーの先端は、前記貫通孔の前記ベースプレートに形成された部分に位置している基板固定装置。 - 前記基体の外部から前記受光部に照射される光により前記電流制御素子が導通し、前記電流制御素子に接続された前記発熱体に電流が流れる請求項1に記載の基板固定装置。
- 前記基体には、独立に温度制御可能な複数の領域が画定され、
各々の前記領域には、前記発熱体が1つ配置されている請求項1又は2に記載の基板固定装置。 - 前記電流制御素子は、フォトトランジスタである請求項1乃至3の何れか一項に記載の基板固定装置。
- 前記基体は、前記発熱体と異なる層に、外部から電圧を印加することで発熱する他の発熱体を内蔵している請求項1乃至4の何れか一項に記載の基板固定装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020014639A JP7429126B2 (ja) | 2020-01-31 | 2020-01-31 | 基板固定装置 |
US17/160,925 US11545384B2 (en) | 2020-01-31 | 2021-01-28 | Electrostatic chuck and substrate fixing device |
KR1020210012222A KR20210098365A (ko) | 2020-01-31 | 2021-01-28 | 정전 척 및 기판 고정 장치 |
CN202110123597.9A CN113284836A (zh) | 2020-01-31 | 2021-01-29 | 静电吸盘和基板固定装置 |
TW110103338A TWI849283B (zh) | 2020-01-31 | 2021-01-29 | 基板固定裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020014639A JP7429126B2 (ja) | 2020-01-31 | 2020-01-31 | 基板固定装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021122034A JP2021122034A (ja) | 2021-08-26 |
JP7429126B2 true JP7429126B2 (ja) | 2024-02-07 |
Family
ID=77062145
Family Applications (1)
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JP2020014639A Active JP7429126B2 (ja) | 2020-01-31 | 2020-01-31 | 基板固定装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11545384B2 (ja) |
JP (1) | JP7429126B2 (ja) |
KR (1) | KR20210098365A (ja) |
CN (1) | CN113284836A (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013545310A (ja) | 2010-11-10 | 2013-12-19 | ラム リサーチ コーポレーション | 半導体処理のための平面ヒータゾーンを伴った加熱板 |
JP2014112672A (ja) | 2012-11-30 | 2014-06-19 | Lam Research Corporation | 温度制御素子アレイを備えるesc用の電力切替システム |
US20150070814A1 (en) | 2013-09-06 | 2015-03-12 | Vijay D. Parkhe | Electrostatic chuck with variable pixilated heating |
JP2015084350A (ja) | 2013-10-25 | 2015-04-30 | 東京エレクトロン株式会社 | 温度制御機構、温度制御方法及び基板処理装置 |
JP2017522730A (ja) | 2014-07-02 | 2017-08-10 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 埋め込み式ファイバーオプティクス及びエポキシ光ディフューザーを使用した基板の温度制御のための装置、システム、並びに方法 |
JP2017527980A (ja) | 2014-06-09 | 2017-09-21 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 光ファイバ加熱を含む基板温度制御装置、基板温度制御システム、電子デバイス処理システム及び方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5945232B2 (ja) * | 1979-01-19 | 1984-11-05 | 株式会社日立製作所 | 光駆動型半導体制御整流装置 |
JPH069187B2 (ja) * | 1983-12-14 | 1994-02-02 | 松下電器産業株式会社 | 試料加熱装置並びに常圧cvd装置および減圧cvd装置 |
US6093916A (en) * | 1997-10-06 | 2000-07-25 | Canon Kabushiki Kaisha | Control device with first and second power control elements to control heater drive apparatus |
US9728430B2 (en) | 2015-06-29 | 2017-08-08 | Varian Semiconductor Equipment Associates, Inc. | Electrostatic chuck with LED heating |
US11367645B2 (en) * | 2019-03-13 | 2022-06-21 | Applied Materials, Inc. | Temperature tunable multi-zone electrostatic chuck |
-
2020
- 2020-01-31 JP JP2020014639A patent/JP7429126B2/ja active Active
-
2021
- 2021-01-28 US US17/160,925 patent/US11545384B2/en active Active
- 2021-01-28 KR KR1020210012222A patent/KR20210098365A/ko active Search and Examination
- 2021-01-29 CN CN202110123597.9A patent/CN113284836A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013545310A (ja) | 2010-11-10 | 2013-12-19 | ラム リサーチ コーポレーション | 半導体処理のための平面ヒータゾーンを伴った加熱板 |
JP2014112672A (ja) | 2012-11-30 | 2014-06-19 | Lam Research Corporation | 温度制御素子アレイを備えるesc用の電力切替システム |
US20150070814A1 (en) | 2013-09-06 | 2015-03-12 | Vijay D. Parkhe | Electrostatic chuck with variable pixilated heating |
JP2015084350A (ja) | 2013-10-25 | 2015-04-30 | 東京エレクトロン株式会社 | 温度制御機構、温度制御方法及び基板処理装置 |
JP2017527980A (ja) | 2014-06-09 | 2017-09-21 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 光ファイバ加熱を含む基板温度制御装置、基板温度制御システム、電子デバイス処理システム及び方法 |
JP2017522730A (ja) | 2014-07-02 | 2017-08-10 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 埋め込み式ファイバーオプティクス及びエポキシ光ディフューザーを使用した基板の温度制御のための装置、システム、並びに方法 |
Also Published As
Publication number | Publication date |
---|---|
US11545384B2 (en) | 2023-01-03 |
US20210242066A1 (en) | 2021-08-05 |
TW202133320A (zh) | 2021-09-01 |
KR20210098365A (ko) | 2021-08-10 |
JP2021122034A (ja) | 2021-08-26 |
CN113284836A (zh) | 2021-08-20 |
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