JP7407476B2 - X線源装置及びその制御方法 - Google Patents
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/045—Electrodes for controlling the current of the cathode ray, e.g. control grids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/06—Cathodes
- H01J35/065—Field emission, photo emission or secondary emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30469—Carbon nanotubes (CNTs)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2235/00—X-ray tubes
- H01J2235/06—Cathode assembly
- H01J2235/062—Cold cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2235/00—X-ray tubes
- H01J2235/06—Cathode assembly
- H01J2235/068—Multi-cathode assembly
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
- X-Ray Techniques (AREA)
Description
Claims (10)
- 被写体にX線を放出するX線源装置において、
電子放出のためにカソード電極の上面に形成されるエミッタと、
前記カソード電極と予め設定された距離だけ離れて形成されるアノード電極と、
前記エミッタと前記アノード電極の間に位置し、少なくとも1つ以上の開口が形成された金属電極の上部に少なくとも1つ以上の層からなるグラフェン(graphene)薄膜を転写することで形成されたゲート電極と、
前記ゲート電極と前記アノード電極の間に位置し、前記エミッタから電子放出された電子ビームを前記アノード電極へ集束する集束レンズと、
前記エミッタとゲート電極に対して2次元行列制御を行うことで前記被写体の位置別にX線線量を調整する制御モジュールとを含み、
前記エミッタは第1の方向にアレイ配列され、前記ゲート電極は第2の方向にアレイ配列され、第1の方向と第2の方向とは垂直に交差し、前記制御モジュールは、前記エミッタと前記ゲート電極との間の電圧の大きさを調整することによって、人体の部位別に電子ビームの発生密度を調整する2次元行列制御を行い、
被験者の性別、年齢、身体情報又は被験者の骨の位置や厚さを示す解剖学的構造情報に基づいて、人体の各部位ごとにX線線量の放出情報を決定するものであり、
前記カソード電極は、互いに平行な状態で接触した少なくとも2つ以上の金属電極を含み、
前記エミッタは、前記カソード電極を構成する金属電極間に挿入され、その端部が点(Point)状または線(Line)状に形成されたCNT薄膜、グラフェン薄膜又は炭素ナノ物質薄膜のうち何れか1つを利用して製造される、X線源装置。 - 前記集束レンズとアノード電極の間に位置し、前記集束レンズを通過した電子ビームが直進して前記アノード電極に集束されるようにする電子ビーム視準器(Electron Beam Collimator)をさらに追加する、請求項1に記載のX線源装置。
- 前記ゲート電極は、孔が形成された金属平板又は多角形状の金属メッシュ(mesh)を金属電極に使用した形態、前記金属電極の上部にグラフェン薄膜を付着した形態、2つの金属電極の間に少なくとも1つ以上のグラフェン薄膜を挿入した形態のうち何れか1つの形態に形成される、請求項1に記載のX線源装置。
- 前記集束レンズは、孔の形態に製造されるか、少なくとも1つ以上のグラフェン薄膜が転写された形態に製造される、請求項1に記載のX線源装置。
- 前記エミッタは、CNT薄膜、グラフェン薄膜又は炭素ナノ物質薄膜のうち何れか1つを利用して製造される、請求項1に記載のX線源装置。
- 前記X線源装置は、ガラス材質、セラミック材質又は金属材質のうち何れか1つの材質にて形成された真空容器の内部に、前記エミッタ、ゲート電極、集束レンズ、アノード電極を順次に配置する、請求項1に記載のX線源装置。
- 前記X線源装置は、ガラス材質、セラミック材質又は金属材質のうち何れか1つの材質にて形成された真空容器の内部に、前記エミッタ、ゲート電極、集束レンズ、電子ビーム視準器、アノード電極を順次に配置する、請求項2に記載のX線源装置。
- 被写体にX線を放出するX線源装置の制御方法において、
前記X線源装置は、カソード電極の上面にエミッタが第1の方向にアレイ配列され、前記エミッタとアノード電極との間でゲート電極が前記第1の方向と垂直に交差する第2の方向にアレイ配列されたものであり、
前記アレイ配列されたエミッタとゲート電極に対して2次元行列制御を行うことで前記被写体の位置別にX線線量を調整するステップを含み、
前記被写体の位置別のX線線量を調整するステップは、前記エミッタと前記ゲート電極との間の電圧の大きさを調整することによって、人体の部位別に電子ビームの発生密度を調整する2次元行列制御を行い、
被験者の性別、年齢、身体情報又は被験者の骨の位置や厚さを示す解剖学的構造情報に基づいて、人体の各部位ごとにX線線量の放出情報を決定するものであり、
前記カソード電極は、互いに平行な状態で接触した少なくとも2つ以上の金属電極を含み、
前記エミッタは、前記カソード電極を構成する金属電極間に挿入され、その端部が点(Point)状または線(Line)状に形成されたCNT薄膜、グラフェン薄膜又は炭素ナノ物質薄膜のうち何れか1つを利用して製造される、X線源装置の制御方法。 - 前記X線源装置は、ガラス材質、セラミック材質又は金属材質のうち何れか1つの材質にて形成された真空容器の内部に、前記エミッタ、ゲート電極、集束レンズ、アノード電極を順次に配置する、請求項8に記載のX線源装置の制御方法。
- 集束レンズを通過した電子ビームが直進して前記アノード電極に集束されるよう、前記集束レンズとアノード電極の間に位置する電子ビーム視準器(Electron Beam Collimator)が追加される場合、
前記X線源装置は、ガラス材質、セラミック材質又は金属材質のうち何れか1つの材質にて形成された真空容器の内部に、前記エミッタ、ゲート電極、集束レンズ、電子ビーム視準器、アノード電極を順次に配置する、請求項8に記載のX線源装置の制御方法。
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Citations (5)
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WO2010032363A1 (ja) | 2008-09-18 | 2010-03-25 | キヤノン株式会社 | マルチx線撮影装置及びその制御方法 |
JP2014161738A (ja) | 2013-02-26 | 2014-09-08 | Samsung Electronics Co Ltd | X線映像システム、x線発生器及び電子放出素子 |
US20150060757A1 (en) | 2013-09-02 | 2015-03-05 | Kumoh National Institute Of Technology | Field emission devices and methods of manufacturing gate electrodes thereof |
US20170084417A1 (en) | 2014-05-13 | 2017-03-23 | Samsung Electronics Co., Ltd. | Electron emitting device using graphene and method for manufacturing same |
US20170303874A1 (en) | 2014-07-03 | 2017-10-26 | Vatech Co., Ltd. | Portable x-ray photographing device |
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US8102108B2 (en) * | 2003-12-05 | 2012-01-24 | Zhidan Li Tolt | Low voltage electron source with self aligned gate apertures, fabrication method thereof, and devices using the electron source |
US7220971B1 (en) * | 2004-12-29 | 2007-05-22 | The University Of North Carolina At Chapel Hill | Multi-pixel electron microbeam irradiator systems and methods for selectively irradiating predetermined locations |
KR101082678B1 (ko) * | 2009-01-16 | 2011-11-15 | 고려대학교 산학협력단 | 탄소나노튜브 얀을 이용한 표면 전계전자 방출원 및 이에 이용되는 탄소나노튜브 얀 제조방법 |
WO2015175765A1 (en) * | 2014-05-15 | 2015-11-19 | Elwha Llc | Applications of graphene grids in vacuum electronics |
US10438764B2 (en) * | 2016-12-07 | 2019-10-08 | Electronics And Telecommunications Research Institute | Field emission apparatus |
KR101982289B1 (ko) * | 2017-09-21 | 2019-05-24 | 고려대학교 산학협력단 | 탄소나노튜브 전자방출원, 그 제조 방법 및 이를 이용하는 엑스선 소스 |
US11329311B2 (en) * | 2018-01-19 | 2022-05-10 | Florida State University Research Foundation, Inc. | Lithium battery using lithium polysulfide as the cathode active material |
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- 2019-08-28 JP JP2022513387A patent/JP7407476B2/ja active Active
- 2019-08-28 EP EP19943133.9A patent/EP4024435A4/en active Pending
- 2019-08-28 WO PCT/KR2019/010970 patent/WO2021040079A1/ko unknown
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Publication number | Priority date | Publication date | Assignee | Title |
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WO2010032363A1 (ja) | 2008-09-18 | 2010-03-25 | キヤノン株式会社 | マルチx線撮影装置及びその制御方法 |
JP2014161738A (ja) | 2013-02-26 | 2014-09-08 | Samsung Electronics Co Ltd | X線映像システム、x線発生器及び電子放出素子 |
US20150060757A1 (en) | 2013-09-02 | 2015-03-05 | Kumoh National Institute Of Technology | Field emission devices and methods of manufacturing gate electrodes thereof |
US20170084417A1 (en) | 2014-05-13 | 2017-03-23 | Samsung Electronics Co., Ltd. | Electron emitting device using graphene and method for manufacturing same |
US20170303874A1 (en) | 2014-07-03 | 2017-10-26 | Vatech Co., Ltd. | Portable x-ray photographing device |
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WO2021040079A1 (ko) | 2021-03-04 |
CN114303220A (zh) | 2022-04-08 |
EP4024435A4 (en) | 2023-08-09 |
EP4024435A1 (en) | 2022-07-06 |
JP2022545826A (ja) | 2022-10-31 |
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