JP7406683B2 - 3dロジック及びメモリのための電力分配ネットワーク - Google Patents
3dロジック及びメモリのための電力分配ネットワーク Download PDFInfo
- Publication number
- JP7406683B2 JP7406683B2 JP2021512235A JP2021512235A JP7406683B2 JP 7406683 B2 JP7406683 B2 JP 7406683B2 JP 2021512235 A JP2021512235 A JP 2021512235A JP 2021512235 A JP2021512235 A JP 2021512235A JP 7406683 B2 JP7406683 B2 JP 7406683B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- power
- rails
- conductive surfaces
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000009826 distribution Methods 0.000 title description 3
- 238000000034 method Methods 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 41
- 239000004065 semiconductor Substances 0.000 claims description 28
- 238000010586 diagram Methods 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000010354 integration Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000013404 process transfer Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5286—Arrangements of power or ground buses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8221—Three dimensional integrated circuits stacked in different levels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823871—Complementary field-effect transistors, e.g. CMOS interconnection or wiring or contact manufacturing related aspects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
- H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/18—Peripheral circuit regions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Ceramic Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Image Generation (AREA)
Description
本出願は、2018年9月5日に出願された米国仮特許出願第62/727,098号について優先権の利益を主張するものであり、この仮特許出願の内容全体が参照により本明細書に組み込まれている。
Claims (18)
- 半導体デバイスであって、
基板の上に積み重ねられる複数のトランジスタ対を有するトランジスタスタックであり、
前記複数のトランジスタ対の各トランジスタ対は、互いの上に積み重ねられるn型トランジスタとp型トランジスタとを含み、
前記複数のトランジスタ対は、
前記基板の上に積み重ねられ、かつ、前記複数のトランジスタ対のゲート構造に電気的に結合される複数のゲート電極と、
前記基板の上に積み重ねられ、かつ前記複数のトランジスタ対のソース領域及びドレイン領域に電気的に結合される複数のソース/ドレイン(S/D)ローカルインターコネクトと、を有する、
トランジスタスタックと、
前記基板の上に形成された1つ以上の導電面であり、
前記トランジスタスタックに隣接して配置され、前記トランジスタスタックの高さにわたって広がり、かつ、前記トランジスタスタックに電気的に結合される、
1つ以上の導電面と
を含む、半導体デバイス。 - 前記半導体デバイスは、さらに、
前記トランジスタスタックの下に配置される複数の電源レール、を含み、
前記1つ以上の導電面のそれぞれは、連続的接続を形成するように、前記複数の電源レールのそれぞれの電源レールの上に配置され、かつ、それに沿って延びる、
請求項1に記載のデバイス。 - 前記半導体デバイスは、さらに、
前記トランジスタスタックの下に配置される複数の電源レール、を含み、
前記1つ以上の導電面のそれぞれは、2つ以上の接続点を形成するように、前記複数の電源レールの2つ以上の電源レールの上に、かつ、それらにわたって配置される、
請求項1に記載のデバイス。 - 前記1つ以上の導電面は、前記複数の電源レールから前記トランジスタスタックに電力を引き込むための連続的な横方向構造を含む、
請求項2に記載のデバイス。 - 前記半導体デバイスは、さらに、
複数の電源レール、を含み、
前記複数の電源レールは、前記1つ以上の導電面の上に配置され、
前記1つ以上の導電面のそれぞれは、連続的接続を形成するように、前記複数の電源レールのそれぞれの電源レールに沿って配置される、
請求項1に記載のデバイス。 - 前記複数のS/Dローカルインターコネクトの1つ以上は、前記1つ以上の導電面に電気的に結合される、
請求項1に記載のデバイス。 - 前記半導体デバイスは、さらに、
前記基板に垂直な方向に形成され、かつ、前記複数のS/Dローカルインターコネクトに電気的に結合された複数の垂直コンタクト、を含み、
前記複数の垂直コンタクトの少なくとも1つは、出力信号に電気的に結合される、
請求項1に記載のデバイス。 - 前記n型トランジスタ及び前記p型トランジスタは、前記複数のゲート電極の1つに電気的に結合されるゲート構造を共有する、
請求項1に記載のデバイス。 - 半導体デバイスを形成する方法であって、
基板の上に積み重ねられる複数のトランジスタ対を含むトランジスタスタックを形成するステップであり、
前記複数のトランジスタ対の各トランジスタ対は、互いの上に積み重ねられるn型トランジスタとp型トランジスタとを含み、
前記複数のトランジスタ対は、前記基板の上に積み重ねられ、かつ、前記複数のトランジスタ対のゲート構造に電気的に結合される複数のゲート電極と、
前記基板の上に積み重ねられ、かつ、前記複数のトランジスタ対のソース領域及びドレイン領域に電気的に結合される複数のソース/ドレイン(S/D)ローカルインターコネクトと、を有する、
形成するステップと、
前記基板の上に1つ以上の導電面を形成するステップであり、
前記1つ以上の導電面は、前記トランジスタスタックに隣接して配置され、前記トランジスタスタックの高さにわたって広がり、かつ、前記トランジスタスタックに電気的に結合される、
形成するステップと、
を含む、方法。 - 前記方法は、さらに、
複数の電源レールを形成するステップ、を含み、
前記複数の電源レールは、前記トランジスタスタックの下に配置され、
前記1つ以上の導電面のそれぞれは、連続的接続を形成するように、前記複数の電源レールのそれぞれの電源レールに沿って延びる、
請求項9に記載の方法。 - 前記方法は、さらに、
複数の電源レールを形成するステップ、を含み、
前記複数の電源レールは、前記トランジスタスタックの下に配置され、
前記1つ以上の導電面のそれぞれは、2つ以上の接続点を形成するように、前記複数の電源レールの2つ以上の電源レールの上に、かつ、それらにわたって配置される、
請求項9に記載の方法。 - 前記方法は、さらに、
複数の電源レールを形成するステップ、を含み、
前記複数の電源レールは、前記1つ以上の導電面の上に配置され、
前記複数の電源レールのそれぞれは、連続的接続を形成するように、前記複数の電源レールのそれぞれの電源レールに沿って延びる、
請求項9に記載の方法。 - 前記1つ以上の導電面は、複数の電源レールから前記トランジスタスタックに電力を引き込むための連続的な横方向構造、を含む、
請求項9に記載の方法。 - 前記複数のS/Dローカルインターコネクトの1つ以上は、前記1つ以上の導電面に電気的に結合される、
請求項9に記載の方法。 - 前記方法は、さらに、
前記基板に垂直な方向に配置され、かつ、前記複数のS/Dローカルインターコネクトに電気的に結合される複数の垂直コンタクトを形成するステップ、を含み、
前記複数の垂直コンタクトの少なくとも1つは、出力信号に電気的に結合される、
請求項9に記載の方法。 - 半導体デバイスであって、
基板の上に積み重ねられる複数のトランジスタ対であり、
前記複数のトランジスタ対の各トランジスタ対は、互いの上に積み重ねられるn型トランジスタとp型トランジスタとを含む、
複数のトランジスタ対と、
前記基板の上に積み重ねられ、かつ、前記複数のトランジスタ対のゲート構造に電気的に結合される複数のゲート電極と、
前記基板の上に積み重ねられ、かつ、前記複数のトランジスタ対のソース領域及びドレイン領域に電気的に結合される複数のソース/ドレイン(S/D)ローカルインターコネクトと、
前記基板の上に形成された1つ以上の導電面であり、前記複数のトランジスタ対に隣接して配置され、前記複数のトランジスタ対の高さにわたって広がり、かつ、前記複数のトランジスタ対に電気的に結合される1つ以上の導電面と、
前記基板の上に配置され、かつ、前記1つ以上の導電面に電気的に結合される複数の電源レールと、
を含む、半導体デバイス。 - 前記複数の電源レールは、前記1つ以上の導電面の上に配置され、
前記複数の電源レールのそれぞれは、連続的接続を形成するように、前記複数の電源レールのそれぞれの電源レールに沿って延びる、
請求項16に記載のデバイス。 - 前記複数の電源レールは、前記1つ以上の導電面の下に配置され、
前記1つ以上の導電面のそれぞれは、
連続的接続を形成するように、前記複数の電源レールのそれぞれの電源レールの上に配置され、かつ、それに沿って延びるか、または、
2つ以上の接続点を形成するように、前記複数の電源レールの2つ以上の電源レールの上に、かつ、それらにわたって配置されるか、
のいずれかである、
請求項16に記載のデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862727098P | 2018-09-05 | 2018-09-05 | |
US62/727,098 | 2018-09-05 | ||
PCT/US2019/049506 WO2020055642A2 (en) | 2018-09-05 | 2019-09-04 | Power distribution network for 3d logic and memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021536675A JP2021536675A (ja) | 2021-12-27 |
JP7406683B2 true JP7406683B2 (ja) | 2023-12-28 |
Family
ID=69640436
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021512235A Active JP7406683B2 (ja) | 2018-09-05 | 2019-09-04 | 3dロジック及びメモリのための電力分配ネットワーク |
Country Status (6)
Country | Link |
---|---|
US (2) | US11114381B2 (ja) |
JP (1) | JP7406683B2 (ja) |
KR (1) | KR20210042163A (ja) |
CN (1) | CN112585752B (ja) |
TW (1) | TWI813762B (ja) |
WO (1) | WO2020055642A2 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7406683B2 (ja) * | 2018-09-05 | 2023-12-28 | 東京エレクトロン株式会社 | 3dロジック及びメモリのための電力分配ネットワーク |
CN113196463B (zh) * | 2018-12-26 | 2024-03-01 | 株式会社索思未来 | 半导体集成电路装置 |
US11437376B2 (en) * | 2019-05-31 | 2022-09-06 | Tokyo Electron Limited | Compact 3D stacked-CFET architecture for complex logic cells |
US11495540B2 (en) * | 2019-10-22 | 2022-11-08 | Tokyo Electron Limited | Semiconductor apparatus having stacked devices and method of manufacture thereof |
DE102020125647A1 (de) * | 2020-01-31 | 2021-08-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Halbleitervorrichtung mit Komplementärfeldeffekttransistor des Typs mit vergrabenenen Logikleitern, Layout-Diagramm-Herstellungsverfahren und System dafür |
DE102021107950A1 (de) * | 2020-05-28 | 2021-12-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Verfahren zum fertigen von halbleiterbauelementen mit unterschiedlichen architekturen und damit gefertigte halbleiterbauelemente |
US11322197B1 (en) * | 2020-10-21 | 2022-05-03 | Arm Limited | Power-gating techniques with buried metal |
US11315628B1 (en) * | 2020-10-21 | 2022-04-26 | Arm Limited | Techniques for powering memory |
US20220181318A1 (en) * | 2020-12-04 | 2022-06-09 | Lars Liebmann | Interdigitated device stack |
US11895816B2 (en) * | 2020-12-04 | 2024-02-06 | Arm Limited | Bitcell architecture |
US20220199629A1 (en) * | 2020-12-17 | 2022-06-23 | Arm Limited | Multi-Transistor Stack Bitcell Architecture |
CN113098493B (zh) * | 2021-04-01 | 2023-05-30 | 长鑫存储技术有限公司 | 逻辑门电路结构 |
US11984401B2 (en) | 2021-06-22 | 2024-05-14 | International Business Machines Corporation | Stacked FET integration with BSPDN |
US11678475B2 (en) * | 2021-07-21 | 2023-06-13 | International Business Machines Corporation | Static random access memory using vertical transport field effect transistors |
US20230070119A1 (en) * | 2021-09-07 | 2023-03-09 | Macronix International Co., Ltd. | Three-dimensional semiconductor structures |
US20230128985A1 (en) * | 2021-10-22 | 2023-04-27 | International Business Machines Corporation | Early backside first power delivery network |
WO2023191808A1 (en) * | 2022-04-01 | 2023-10-05 | Intel Corporation | Integrated circuit devices with angled transistors |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070228383A1 (en) | 2006-03-31 | 2007-10-04 | Kerry Bernstein | 3-dimensional integrated circuit architecture, structure and method for fabrication thereof |
US20130270512A1 (en) | 2011-12-19 | 2013-10-17 | Marko Radosavljevic | Cmos implementation of germanium and iii-v nanowires and nanoribbons in gate-all-around architecture |
US20160111517A1 (en) | 2014-10-20 | 2016-04-21 | Sandisk 3D Llc | Dual gate structure |
US20170053906A1 (en) | 2015-08-23 | 2017-02-23 | Monolithic 3D Inc. | Semiconductor memory device and structure |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5977579A (en) * | 1998-12-03 | 1999-11-02 | Micron Technology, Inc. | Trench dram cell with vertical device and buried word lines |
KR100665848B1 (ko) * | 2005-03-21 | 2007-01-09 | 삼성전자주식회사 | 적층 타입 디커플링 커패시터를 갖는 반도체 장치 |
JP5826716B2 (ja) | 2012-06-19 | 2015-12-02 | 株式会社東芝 | 半導体装置及びその製造方法 |
US9281044B2 (en) * | 2013-05-17 | 2016-03-08 | Micron Technology, Inc. | Apparatuses having a ferroelectric field-effect transistor memory array and related method |
US9786663B2 (en) | 2013-08-23 | 2017-10-10 | Qualcomm Incorporated | Layout construction for addressing electromigration |
US20150370948A1 (en) | 2014-06-23 | 2015-12-24 | Synopsys, Inc. | Memory cells having transistors with different numbers of nanowires or 2d material strips |
US9400862B2 (en) | 2014-06-23 | 2016-07-26 | Synopsys, Inc. | Cells having transistors and interconnects including nanowires or 2D material strips |
US9378320B2 (en) * | 2014-06-23 | 2016-06-28 | Synopsys, Inc. | Array with intercell conductors including nanowires or 2D material strips |
US9419003B1 (en) | 2015-05-15 | 2016-08-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods of manufacture thereof |
US9997463B2 (en) * | 2015-07-01 | 2018-06-12 | Stmicroelectronics, Inc. | Modular interconnects for gate-all-around transistors |
WO2017171842A1 (en) * | 2016-04-01 | 2017-10-05 | Intel Corporation | Transistor cells including a deep via lined with a dielectric material |
US11018235B2 (en) * | 2016-06-13 | 2021-05-25 | Imec Vzw | Vertically stacked semiconductor devices having vertical channel transistors |
CN109643725B (zh) * | 2016-08-08 | 2022-07-29 | 东京毅力科创株式会社 | 三维半导体器件及制造方法 |
KR102073636B1 (ko) * | 2016-09-13 | 2020-02-05 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 포함하는 표시 장치 |
CN106298778A (zh) * | 2016-09-30 | 2017-01-04 | 中国科学院微电子研究所 | 半导体器件及其制造方法及包括该器件的电子设备 |
US9947664B1 (en) | 2016-10-14 | 2018-04-17 | International Business Machines Corporation | Semiconductor device and method of forming the semiconductor device |
EP3343614A3 (en) * | 2016-12-29 | 2018-10-31 | IMEC vzw | Standard cell for vertical transistors |
US10269983B2 (en) * | 2017-05-09 | 2019-04-23 | Globalfoundries Inc. | Stacked nanosheet field-effect transistor with air gap spacers |
JP7406683B2 (ja) * | 2018-09-05 | 2023-12-28 | 東京エレクトロン株式会社 | 3dロジック及びメモリのための電力分配ネットワーク |
-
2019
- 2019-09-04 JP JP2021512235A patent/JP7406683B2/ja active Active
- 2019-09-04 KR KR1020217009083A patent/KR20210042163A/ko not_active Application Discontinuation
- 2019-09-04 US US16/560,544 patent/US11114381B2/en active Active
- 2019-09-04 WO PCT/US2019/049506 patent/WO2020055642A2/en active Application Filing
- 2019-09-04 CN CN201980055054.9A patent/CN112585752B/zh active Active
- 2019-09-05 TW TW108132033A patent/TWI813762B/zh active
-
2021
- 2021-07-21 US US17/381,449 patent/US11616020B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070228383A1 (en) | 2006-03-31 | 2007-10-04 | Kerry Bernstein | 3-dimensional integrated circuit architecture, structure and method for fabrication thereof |
US20130270512A1 (en) | 2011-12-19 | 2013-10-17 | Marko Radosavljevic | Cmos implementation of germanium and iii-v nanowires and nanoribbons in gate-all-around architecture |
US20160111517A1 (en) | 2014-10-20 | 2016-04-21 | Sandisk 3D Llc | Dual gate structure |
US20170053906A1 (en) | 2015-08-23 | 2017-02-23 | Monolithic 3D Inc. | Semiconductor memory device and structure |
Also Published As
Publication number | Publication date |
---|---|
WO2020055642A2 (en) | 2020-03-19 |
JP2021536675A (ja) | 2021-12-27 |
US11616020B2 (en) | 2023-03-28 |
CN112585752B (zh) | 2023-09-19 |
CN112585752A (zh) | 2021-03-30 |
US20200075489A1 (en) | 2020-03-05 |
TWI813762B (zh) | 2023-09-01 |
US11114381B2 (en) | 2021-09-07 |
TW202025454A (zh) | 2020-07-01 |
KR20210042163A (ko) | 2021-04-16 |
US20210351132A1 (en) | 2021-11-11 |
WO2020055642A3 (en) | 2020-06-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7406683B2 (ja) | 3dロジック及びメモリのための電力分配ネットワーク | |
JP7402401B2 (ja) | モノリシック集積型3次元cmosロジック及びメモリを製造するためのアーキテクチャ設計及びプロセス | |
JP7046049B2 (ja) | 三次元半導体デバイス及び製造方法 | |
US11450671B2 (en) | Semiconductor apparatus having stacked devices and method of manufacture thereof | |
JP2022534858A (ja) | 複合ロジックセルのための小型3d積層cfetアーキテクチャ | |
US20220375921A1 (en) | Highly regular logic design for efficient 3d integration | |
US20220181318A1 (en) | Interdigitated device stack | |
US12002862B2 (en) | Inter-level handshake for dense 3D logic integration | |
US11923364B2 (en) | Double cross-couple for two-row flip-flop using CFET | |
US20220181453A1 (en) | Inter-level handshake for dense 3d logic integration | |
JP2022534219A (ja) | 3dロジック及びメモリのためのセルフアラインコンタクト | |
CN114586149A (zh) | 具有堆叠器件的半导体装置及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220728 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230516 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230814 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20231024 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20231101 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231101 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7406683 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |