JP7403746B2 - 複数の集積回路を製造するシステムおよび方法 - Google Patents

複数の集積回路を製造するシステムおよび方法 Download PDF

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JP7403746B2
JP7403746B2 JP2020538557A JP2020538557A JP7403746B2 JP 7403746 B2 JP7403746 B2 JP 7403746B2 JP 2020538557 A JP2020538557 A JP 2020538557A JP 2020538557 A JP2020538557 A JP 2020538557A JP 7403746 B2 JP7403746 B2 JP 7403746B2
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common support
station
processing
operable
module
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JP2021513737A (ja
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リチャード デービッド プライス
ネイル デービス
スコット ホワイト
ヒーバー トーマス スタンリー ヴァンデン
ケネス デービッド ウィリアムソン
ナサニエル ジェームズ グリーン
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Pragmatic Semiconductor Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0461—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the presence of two or more transfer chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0466—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3216—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations using a general scheme of a conveying path within a factory
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3304—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber characterised by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3311—Horizontal transfer of a batch of workpieces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7602—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a robot blade or gripped by a gripper for conveyance

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Robotics (AREA)
  • Automation & Control Theory (AREA)
  • General Factory Administration (AREA)
JP2020538557A 2018-01-30 2019-01-30 複数の集積回路を製造するシステムおよび方法 Active JP7403746B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GB1801473.8A GB2570510A (en) 2018-01-30 2018-01-30 System and method for manufacturing plurality of integrated circuits
GB1801473.8 2018-01-30
GB1807577.0A GB2570527A (en) 2018-01-30 2018-05-09 System and method for manufacturing plurality of integrated circuits
GB1807577.0 2018-05-09
PCT/GB2019/050250 WO2019150100A1 (en) 2018-01-30 2019-01-30 System and method for manufacturing plurality of integrated circuits

Publications (2)

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JP2021513737A JP2021513737A (ja) 2021-05-27
JP7403746B2 true JP7403746B2 (ja) 2023-12-25

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US (2) US20210074563A1 (de)
EP (1) EP3747042B1 (de)
JP (1) JP7403746B2 (de)
KR (1) KR102723883B1 (de)
CN (1) CN111971783A (de)
GB (2) GB2570510A (de)
TW (1) TWI835774B (de)
WO (1) WO2019150100A1 (de)

Families Citing this family (3)

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Publication number Priority date Publication date Assignee Title
MY209872A (en) * 2021-01-29 2025-08-08 Pink Gmbh Thermosysteme System and method for connecting electronic assemblies
CN113843814A (zh) * 2021-09-10 2021-12-28 北京声智科技有限公司 机械臂设备的控制系统、方法、装置和存储介质
CN115224186A (zh) * 2022-07-25 2022-10-21 复旦大学 约瑟夫森结制备装置、方法及约瑟夫森结

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JP2014107570A (ja) 2012-11-29 2014-06-09 Asm Ip Holding B V 処理システムのためのスケジューラ
JP2014199878A (ja) 2013-03-29 2014-10-23 芝浦メカトロニクス株式会社 処理システム、および処理方法
JP2015502654A (ja) 2011-10-26 2015-01-22 ブルックス オートメーション インコーポレイテッド 半導体ウェハのハンドリングおよび搬送
JP2016157949A (ja) 2007-05-18 2016-09-01 ブルックス オートメーション インコーポレイテッド 半導体処理ツール
JP2017211713A (ja) 2016-05-23 2017-11-30 ルネサスエレクトロニクス株式会社 生産システム

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US6122566A (en) * 1998-03-03 2000-09-19 Applied Materials Inc. Method and apparatus for sequencing wafers in a multiple chamber, semiconductor wafer processing system
US6411859B1 (en) * 1998-08-28 2002-06-25 Advanced Micro Devices, Inc. Flow control in a semiconductor fabrication facility
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JP4149166B2 (ja) * 2002-01-08 2008-09-10 東京エレクトロン株式会社 処理システム及び処理方法
US20030204528A1 (en) * 2002-04-30 2003-10-30 Yeaun-Jyh Su Semiconductor wafer manufacturing execution system with special engineer requirement database
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JP2016157949A (ja) 2007-05-18 2016-09-01 ブルックス オートメーション インコーポレイテッド 半導体処理ツール
JP2015502654A (ja) 2011-10-26 2015-01-22 ブルックス オートメーション インコーポレイテッド 半導体ウェハのハンドリングおよび搬送
JP2014107570A (ja) 2012-11-29 2014-06-09 Asm Ip Holding B V 処理システムのためのスケジューラ
JP2014199878A (ja) 2013-03-29 2014-10-23 芝浦メカトロニクス株式会社 処理システム、および処理方法
JP2017211713A (ja) 2016-05-23 2017-11-30 ルネサスエレクトロニクス株式会社 生産システム

Also Published As

Publication number Publication date
KR20200111252A (ko) 2020-09-28
JP2021513737A (ja) 2021-05-27
EP3747042C0 (de) 2023-08-02
KR102723883B1 (ko) 2024-10-31
US20240234185A9 (en) 2024-07-11
EP3747042A1 (de) 2020-12-09
WO2019150100A1 (en) 2019-08-08
US20240136211A1 (en) 2024-04-25
TW201937639A (zh) 2019-09-16
GB2570527A (en) 2019-07-31
CN111971783A (zh) 2020-11-20
GB2570510A (en) 2019-07-31
GB201807577D0 (en) 2018-06-20
US20210074563A1 (en) 2021-03-11
GB201801473D0 (en) 2018-03-14
TWI835774B (zh) 2024-03-21
EP3747042B1 (de) 2023-08-02

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