JP7403225B2 - アレイ基板及びその製造方法、表示パネルと表示装置 - Google Patents
アレイ基板及びその製造方法、表示パネルと表示装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 121
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 230000004888 barrier function Effects 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 19
- 150000002500 ions Chemical class 0.000 claims description 15
- 239000007772 electrode material Substances 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 105
- 238000010586 diagram Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910001257 Nb alloy Inorganic materials 0.000 description 3
- 229910000583 Nd alloy Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- DTSBBUTWIOVIBV-UHFFFAOYSA-N molybdenum niobium Chemical compound [Nb].[Mo] DTSBBUTWIOVIBV-UHFFFAOYSA-N 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910017107 AlOx Inorganic materials 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005274 electronic transitions Effects 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Description
本出願は、2017年6月8日に出願された中国特許出願第201710426034.0号の優先権を主張し、上記した中国特許出願に開示されている全ての内容を引用して本出願の一部とする。
サブストレートの上に能動層を形成するステップS101と、
能動層の上にゲート電極と第1電極を形成するステップS103と、
ゲート電極と前記第1電極の上に第1絶縁層を形成するステップS105と、
第1絶縁層の上にバリア材料層を形成するステップS107と、
一次パターニング工程によりバリア材料層に対して処理を行うことによって、バリア部と第2電極を形成し、第2電極のサブストレート上の投影と第1電極のサブストレート上の投影は少なくとも一部が重なり、バリア部におけるゲート電極の一端側から外側へ延びる部分のサブストレート上の投影は、能動層におけるゲート電極の一端側から外側へ延びる部分のサブストレート上の投影内に位置するステップS109と、
バリア部をマスクとして用いて、能動層に対して第1ドープを行うことによって、能動層のチャネル領域の両側に位置するソース/ドレイン領域と、チャネル領域とソース/ドレイン領域との間に設けられた低ドープドレイン領域を形成するステップS111と、を含む。
ゲート電極と第1電極を形成する前に、能動層の上に第2絶縁層を形成するステップS102と、
ゲート電極と第1電極を形成した後に、ゲート電極をマスクとして用いて能動層に対してドープを行うことによって、能動層のチャネル領域を限定するステップS104と、
前記ソース/ドレイン領域を形成した後に、第1絶縁層と第2絶縁層を貫通するビアを形成するステップS113と、
前記第1絶縁層の上に、ビアを介して前記ソース/ドレイン領域と接触するソース/ドレイン電極を形成するステップS115と、を含む。
11 能動層
11C チャネル領域
11SD ソース/ドレイン領域
11L 低ドープドレイン領域
13 第1絶縁層
15 第2絶縁層
121 ゲート電極
122 第1電極
141 バリア部
142 第2電極
V ビア
P 開口
Claims (9)
- サブストレートの上に能動層を形成することと、
前記能動層の上にゲート電極と第1電極を形成することと、
前記ゲート電極と前記第1電極の上に第1絶縁層を形成することと、
前記第1絶縁層の上にバリア材料層を形成することと、
一次パターニング工程により前記バリア材料層に対して処理を行うことによって、バリア部と第2電極を形成し、前記バリア部と前記第2電極は同層に設けられているとともに材料が同じであり、前記第2電極の前記サブストレート上の投影と前記第1電極の前記サブストレート上の投影は少なくとも一部が重なり、前記バリア部における前記ゲート電極の一端側から外側へ延びる部分の前記サブストレート上の投影は、前記能動層における前記ゲート電極の一端側から外側へ延びる部分の前記サブストレート上の投影内に位置することと、
前記バリア部をマスクとして用いて、前記能動層に対して第1ドープを行うことによって、能動層のチャネル領域の両側に位置するソース/ドレイン領域と、前記チャネル領域と前記ソース/ドレイン領域との間に設けられた低ドープドレイン領域を形成することと、を含み、
前記第1電極の前記サブストレート上の投影と前記能動層の前記チャネル領域、前記ソース/ドレイン領域、及び前記低ドープドレイン領域の前記サブストレート上の投影は重ならず、
前記第2電極の前記サブストレート上の投影と前記能動層の前記チャネル領域、前記ソース/ドレイン領域、及び前記低ドープドレイン領域の前記サブストレート上の投影は重ならない、
アレイ基板の製造方法。 - 前記バリア部は開口を有し、前記開口の前記サブストレート上の投影と前記ゲート電極の前記サブストレート上の投影は少なくとも一部が重なる、
請求項1に記載のアレイ基板の製造方法。 - 前記低ドープドレイン領域の幅の範囲は略0.5μm~1μmである、
請求項2に記載のアレイ基板の製造方法。 - 前記第1ドープのドープエネルギーは略30Kev~40Kevである、
請求項1に記載のアレイ基板の製造方法。 - 前記ソース/ドレイン領域のドープ濃度は前記低ドープドレイン領域のドープ濃度より大きく、前記ソース/ドレイン領域のドープ濃度の範囲は略4.5×1015~6×1015イオン/cm3であり、前記低ドープドレイン領域のドープ濃度の範囲は略5×1012~4.5×1015イオン/cm3である、
請求項1に記載のアレイ基板の製造方法。 - 前記チャネル領域の導電タイプはN型であり、前記低ドープドレイン領域の導電タイプと前記ソース/ドレイン領域のドープ領域の導電タイプはP型である、
請求項1に記載のアレイ基板の製造方法。 - 前記アレイ基板の製造方法は、
前記ゲート電極と前記第1電極を形成する前に、前記能動層の上に第2絶縁層を形成することと、
前記ソース/ドレイン領域を形成した後に、前記第1絶縁層と前記第2絶縁層を貫通するビアを形成することと、
前記第1絶縁層の上に、ビアを介して前記ソース/ドレイン領域と接触するソース/ドレイン電極を形成することと、をさらに含む、
請求項1~6のいずれか1項に記載のアレイ基板の製造方法。 - 前記ゲート電極と前記第1電極を形成することは、
前記第2絶縁層の上にゲート電極材料層を形成することと、
前記ゲート電極材料層に対してパターニングを行うことによって、前記ゲート電極と前記第1電極を形成することと、を含む、
請求項7に記載のアレイ基板の製造方法。 - 前記アレイ基板の製造方法は、
前記ゲート電極と前記第1電極を形成した後に、前記ゲート電極をマスクとして用いて前記能動層に対してドープを行うことによって、前記能動層のチャネル領域を限定することを、さらに含む、
請求項1~6のいずれか1項に記載のアレイ基板の製造方法。
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