JP7390364B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP7390364B2 JP7390364B2 JP2021512845A JP2021512845A JP7390364B2 JP 7390364 B2 JP7390364 B2 JP 7390364B2 JP 2021512845 A JP2021512845 A JP 2021512845A JP 2021512845 A JP2021512845 A JP 2021512845A JP 7390364 B2 JP7390364 B2 JP 7390364B2
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- 239000010410 layer Substances 0.000 claims description 394
- 239000004065 semiconductor Substances 0.000 claims description 261
- 239000012790 adhesive layer Substances 0.000 claims description 106
- 239000000758 substrate Substances 0.000 claims description 26
- 230000004888 barrier function Effects 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 description 15
- 230000000149 penetrating effect Effects 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920001486 SU-8 photoresist Polymers 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- Condensed Matter Physics & Semiconductors (AREA)
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Description
Claims (17)
- 第1n型半導体層と、第1活性層と、第1p型半導体層とを有する第1発光部と、
前記第1発光部上に配置され、第2n型半導体層と、第2活性層と、第2p型半導体層とを有し、前記第2n型半導体層は、第1面と、第1面に対向する第2面とを有する第2発光部と、
前記第2発光部上に配置され、第3n型半導体層と、第3活性層と、第3p型半導体層とを有する第3発光部と、
前記第2n型半導体層の第1面上に配置された第1接触構造体と、
前記第2n型半導体層の第2面上に配置された第2接触構造体と、
前記第3n型半導体層と電気的に接続するように前記第3発光部に延在する第3接触構造体と、を含み、
前記第1接触構造体は、前記第1発光部内に延在して前記第1n型半導体層と電気的に接続し、
前記第2接触構造体は、前記第2発光部内に延在して第3n型半導体層と電気的に接続することを特徴とする発光装置。 - 前記発光装置の第1角に配置され、第1、第2、及び第3n型半導体層と電気的に接続された共通パッドと、
前記発光装置の第2角に配置され、前記第1p型半導体層と電気的に接続された第1パッドと、
前記発光装置の第3角部に配置され、前記第2p型半導体層と電気的に接続された第2パッドと、
前記発光装置の第4角部に配置され、前記第3p型半導体層と電気的に接続された第3パッドとをさらに含み、
前記第1、第2、及び第3n型半導体層は、前記第1乃至第3接触構造体によって互いに電気的に接続されることを特徴とする請求項1に記載の発光装置。 - 前記第2発光部は第2角部の一部が除去されたようなメサ構造体を有し、
前記第3発光部は前記第2及び第3角部の一部が除去されたようなメサ構造体を有する、請求項2に記載の発光装置。 - 前記第1接触構造体の外側側壁を取り囲み、前記第1p型半導体層上に延在する第1カラーフィルタと、
前記第1カラーフィルタの外側側壁を取り囲み、前記第1カラーフィルタ上に延在する第1接着層と、
前記第2接触構造体の外側側壁を取り囲み、前記第2p型半導体層上に延在する第2カラーフィルタと、
前記第2カラーフィルタの外側側壁を取り囲み、前記第2カラーフィルタ上に延在する第2接着層と、をさらに含むことを特徴とする請求項1に記載の発光装置。 - 第1n型半導体層と、第1活性層と、第1p型半導体層とを有する第1発光部と、
前記第1発光部上に配置され、第2n型半導体層と、第2活性層と、第2p型半導体層とを有し、前記第2n型半導体層は、第1面と、第1面に対向する第2面とを有する第2発光部と、
前記第2発光部上に配置され、第3n型半導体層と、第3活性層と、第3p型半導体層とを有する第3発光部と、
前記第2n型半導体層の第1面上に配置された第1接触構造体と、
前記第2n型半導体層の第2面上に配置された第2接触構造体と、
前記第1発光部内に延在し、前記第1n型半導体層と電気的に接続する第3接触構造体と、を含み、
前記第1接触構造体は前記第2発光部内に延在し、
前記第2接触構造体は前記第3発光部内に延在し、前記第3n型半導体層と電気的に接続されることを特徴とする発光装置。 - 前記第1接触構造体の一方の面は前記第2n型半導体層に電気的に接続し、
前記第1接触構造体の他方の面は前記第1n型半導体層に電気的に接続することを特徴とする請求項5に記載の発光装置。 - 前記発光装置の第1角部に配置され、前記第1、第2、第3n型半導体層と電気的に接続された共通パッドと、
前記発光装置の第2角部に配置され、前記第1p型半導体層と電気的に接続された第1パッドと、
前記発光装置の第3角部に配置され、前記第2p型半導体層と電気的に接続された第2パッドと、
前記発光装置の第4角部に配置され、前記第3p型半導体層と電気的に接続された第3パッドとをさらに含み、
前記第1、第2、第3n型半導体層は、前記第1及び第2接触構造体によって互いに電気的に接続されることを特徴とする請求項5に記載の発光装置。 - 前記第1発光部は、前記第1n型半導体層及び前記第2活性層が前記第2角部の少なくとも一部に形成されないようなメサ構造体を有し、
前記第2発光部は、前記第2及び第3角部の一部が除去されたようなメサ構造体を有し、
前記第3発光部は、前記第4角部の一部が除去されたようなメサ構造体を有することを特徴とする請求項7に記載の発光装置。 - 前記第1接触構造体の外側側壁を取り囲み、前記第2p型半導体層上に延在する第1カラーフィルタと、
前記第1カラーフィルタの外側側壁を取り囲み、前記第1カラーフィルタ上に延在する第1接着層と、
前記第2接触構造体の外側側壁を取り囲み、前記第3p型半導体層上に延在する第2カラーフィルタと、
前記第2カラーフィルタの外側側壁を取り囲み、前記第2カラーフィルタ上に延在する第2接着層と、をさらに含むことを特徴とする請求項5に記載の発光装置。 - 前記第1接触構造体と前記第3接触構造体とは互いに電気的に接続していることを特徴とする請求項5に記載の発光装置。
- 前記第1、第2、及び第3接触構造体のそれぞれは、オーミック層、第1導電層、バリア層、第2導電層、及び接着層を含み、
前記第1接触構造体の接着層と前記第3接触構造体の接着層とは互いに接触することを特徴とする請求項10に記載の発光装置。 - 前記発光装置の第1角部に配置され、前記第1、第2、及び第3n型半導体層と電気的に接続された共通パッドと、
前記発光装置の第2角部に配置され、前記第1p型半導体層と電気的に接続された第1パッドと、
前記発光装置の第3角部に配置され、前記第2p型半導体層と電気的に接続された第2パッドと、
前記発光装置の第4角部に配置され、前記第3p型半導体層と電気的に接続された第3パッドとをさらに含み、
前記第1、第2、第3n型半導体層は、前記第1、第2、及び第3接触構造体によって互いに電気的に接続されることを特徴とする請求項10に記載の発光装置。 - 前記第2発光部は、前記第2及び第3角部の一部が除去されたようなメサ構造体を有し、
前記第3発光部は、前記第4角部の一部が除去されたようなメサ構造体を有することを特徴とする請求項12に記載の発光装置。 - 前記第3接触構造体の外側側壁を取り囲み、前記第1p型半導体層上に延在する第1カラーフィルタと、
前記第1カラーフィルタの外側側壁を取り囲み、前記第1カラーフィルタ上に延在する第1接着層と、
前記第2接触構造体の外側側壁を取り囲み、前記第3p型半導体層上に延在する第2カラーフィルタと、
前記第2カラーフィルタの外側側壁を取り囲み、前記第2カラーフィルタ上に延在する第2接着層と、をさらに含むことを特徴とする請求項10に記載の発光装置。 - 前記第1発光部の前記第1面に対向する第2面上に配置された基板をさらに含むことを特徴とする請求項1又は5に記載の発光装置。
- 前記第3発光部上に配置され、前記第1、第2、及び第3n型半導体層を電気的に接続する共通パッドと、
前記第3発光部上に配置され、前記第1p型半導体層と電気的に接続された第1パッドと、
前記第3発光部上に配置され、前記第2p型半導体層と電気的に接続された第2パッドと、
前記第3発光部上に配置され、前記第3p型半導体層と電気的に接続された第3パッドと、をさらに含むことを特徴とする請求項1又は5に記載の発光装置。 - 前記第3発光部上に配置され、それぞれ前記共通パッド、前記第1パッド、前記第2パッド、及び前記第3パッドと電気的に接続された貫通電極を有する支持基板をさらに含むことを特徴とする請求項16に記載の発光装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862731206P | 2018-09-14 | 2018-09-14 | |
US62/731,206 | 2018-09-14 | ||
US16/561,256 | 2019-09-05 | ||
US16/561,256 US11430929B2 (en) | 2018-09-14 | 2019-09-05 | Light emitting device having a stacked structure |
PCT/KR2019/011795 WO2020055143A1 (ko) | 2018-09-14 | 2019-09-11 | 발광 소자 |
Publications (2)
Publication Number | Publication Date |
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JP2021536137A JP2021536137A (ja) | 2021-12-23 |
JP7390364B2 true JP7390364B2 (ja) | 2023-12-01 |
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US (3) | US11430929B2 (ja) |
EP (1) | EP3852153A4 (ja) |
JP (1) | JP7390364B2 (ja) |
KR (1) | KR20210046656A (ja) |
CN (2) | CN112689905B (ja) |
BR (1) | BR112021004888A2 (ja) |
WO (1) | WO2020055143A1 (ja) |
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US11430929B2 (en) * | 2018-09-14 | 2022-08-30 | Seoul Viosys Co., Ltd. | Light emitting device having a stacked structure |
US11211528B2 (en) * | 2019-03-13 | 2021-12-28 | Seoul Viosys Co., Ltd. | Light emitting device for display and display apparatus having the same |
US11437353B2 (en) * | 2019-11-15 | 2022-09-06 | Seoul Viosys Co., Ltd. | Light emitting device for display and display apparatus having the same |
KR20220100870A (ko) * | 2019-11-15 | 2022-07-18 | 서울바이오시스 주식회사 | 디스플레이용 발광 소자 및 그것을 가지는 디스플레이 장치 |
US11631786B2 (en) * | 2020-11-12 | 2023-04-18 | Lumileds Llc | III-nitride multi-wavelength LED arrays with etch stop layer |
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JP4869661B2 (ja) | 2005-08-23 | 2012-02-08 | 株式会社Jvcケンウッド | 表示装置 |
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KR20100036032A (ko) * | 2008-09-29 | 2010-04-07 | 서울옵토디바이스주식회사 | 발광 소자 |
DE102009054564A1 (de) * | 2009-12-11 | 2011-06-16 | Osram Opto Semiconductors Gmbh | Laserdiodenanordnung und Verfahren zum Herstellen einer Laserdiodenanordnung |
US20110204376A1 (en) * | 2010-02-23 | 2011-08-25 | Applied Materials, Inc. | Growth of multi-junction led film stacks with multi-chambered epitaxy system |
DE102010002966B4 (de) * | 2010-03-17 | 2020-07-30 | Osram Opto Semiconductors Gmbh | Laserdiodenanordnung und Verfahren zum Herstellen einer Laserdiodenanordnung |
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EP2757598B1 (en) * | 2011-09-16 | 2017-04-26 | Seoul Viosys Co., Ltd. | Light emitting diode |
JP5889981B2 (ja) * | 2014-09-09 | 2016-03-22 | 株式会社東芝 | 半導体発光素子 |
KR102406606B1 (ko) | 2015-10-08 | 2022-06-09 | 삼성디스플레이 주식회사 | 유기 발광 소자, 이를 포함하는 유기 발광 표시 장치, 및 이의 제조 방법 |
DE102016104280A1 (de) | 2016-03-09 | 2017-09-14 | Osram Opto Semiconductors Gmbh | Bauelement und Verfahren zur Herstellung eines Bauelements |
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KR20180079814A (ko) | 2017-01-02 | 2018-07-11 | 주식회사 루멘스 | 디스플레이 모듈용 멀티 픽셀 led 패키지 |
KR101931798B1 (ko) * | 2017-09-19 | 2018-12-21 | 주식회사 썬다이오드코리아 | 다중 터널 정션 구조를 가지는 발광 다이오드 |
US11430929B2 (en) * | 2018-09-14 | 2022-08-30 | Seoul Viosys Co., Ltd. | Light emitting device having a stacked structure |
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2019
- 2019-09-05 US US16/561,256 patent/US11430929B2/en active Active
- 2019-09-11 CN CN201980060005.4A patent/CN112689905B/zh active Active
- 2019-09-11 EP EP19860130.4A patent/EP3852153A4/en active Pending
- 2019-09-11 KR KR1020217002552A patent/KR20210046656A/ko not_active Application Discontinuation
- 2019-09-11 CN CN201921518123.9U patent/CN210224059U/zh active Active
- 2019-09-11 BR BR112021004888-0A patent/BR112021004888A2/pt unknown
- 2019-09-11 JP JP2021512845A patent/JP7390364B2/ja active Active
- 2019-09-11 WO PCT/KR2019/011795 patent/WO2020055143A1/ko unknown
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2022
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JP2015012244A (ja) | 2013-07-01 | 2015-01-19 | 株式会社東芝 | 半導体発光素子 |
US20170288093A1 (en) | 2016-04-04 | 2017-10-05 | Samsung Electronics Co., Ltd. | Led light source module and display device |
Also Published As
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US20220406983A1 (en) | 2022-12-22 |
EP3852153A4 (en) | 2022-06-22 |
KR20210046656A (ko) | 2021-04-28 |
CN112689905A (zh) | 2021-04-20 |
EP3852153A1 (en) | 2021-07-21 |
WO2020055143A1 (ko) | 2020-03-19 |
CN210224059U (zh) | 2020-03-31 |
US20200091389A1 (en) | 2020-03-19 |
BR112021004888A2 (pt) | 2021-06-01 |
US20230261161A1 (en) | 2023-08-17 |
CN112689905B (zh) | 2024-03-12 |
JP2021536137A (ja) | 2021-12-23 |
US11430929B2 (en) | 2022-08-30 |
US11626554B2 (en) | 2023-04-11 |
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